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dc.contributor.author | Morro, J. V. | es_ES |
dc.contributor.author | Rodriguez Perez, Ana Maria | es_ES |
dc.contributor.author | Belenguer Martínez, Ángel | es_ES |
dc.contributor.author | Esteban González, Héctor | es_ES |
dc.contributor.author | Boria Esbert, Vicente Enrique | es_ES |
dc.date.accessioned | 2017-06-13T15:07:10Z | |
dc.date.available | 2017-06-13T15:07:10Z | |
dc.date.issued | 2016-08-02 | |
dc.identifier.issn | 0013-5194 | |
dc.identifier.uri | http://hdl.handle.net/10251/82771 | |
dc.description | This paper is a postprint of a paper submitted to and accepted for publication in Electronics Letters and is subject to Institution of Engineering and Technology Copyright. The copy of record is available at the IET Digital Library. | es_ES |
dc.description.abstract | Empty substrate integrated waveguide (ESIW) is an improvement of the well-known substrate integrated waveguide. While maintaining the low cost, easy manufacturing, small size, and integration with other circuits in the same substrate, ESIW decreases the related losses by removing the dielectric substrate, thus rendering it more interesting for practical applications. A wide band transition has been already developed to connect ESIW to microstrip lines. Filters, couplers, and antennas have also been developed in ESIW. For multilevel configurations, where different ESIW devices are implemented in different stacked substrates, a transition is needed that connects ESIW lines in different substrate levels. A low reflection wideband transition is presented for connecting two stacked ESIW lines. | es_ES |
dc.description.sponsorship | This work was supported by the Ministerio de Economia y Competitividad, Spanish Goverment, under Research Projects TEC2013-47037-C05-3-R and TEC2013-47037-C05-1-R. | en_EN |
dc.language | Inglés | es_ES |
dc.publisher | Institution of Engineering and Technology (IET) | es_ES |
dc.relation.ispartof | Electronics Letters | es_ES |
dc.rights | Reserva de todos los derechos | es_ES |
dc.subject | Wide band transition | es_ES |
dc.subject | Empty substrate integrated waveguide | es_ES |
dc.subject | Low reflection wideband transition | es_ES |
dc.subject | Microstrip line | es_ES |
dc.subject | Filter | es_ES |
dc.subject | ESIW line | es_ES |
dc.subject | Dielectric substrate | es_ES |
dc.subject | Coupler | es_ES |
dc.subject | Antenna | es_ES |
dc.subject | Multilevel transition | es_ES |
dc.subject.classification | TEORIA DE LA SEÑAL Y COMUNICACIONES | es_ES |
dc.title | Multilevel transition in empty substrate integrated waveguide | es_ES |
dc.type | Artículo | es_ES |
dc.identifier.doi | 10.1049/el.2016.2558 | |
dc.relation.projectID | info:eu-repo/grantAgreement/MINECO//TEC2013-47037-C5-3-R/ES/NUEVAS TOPOLOGIAS CON ALTAS PRESTACIONES DE CIRCUITOS PASIVOS SIW Y METAMATERIALES PARA COMUNICACIONES VIA SATELITE CON APLICACIONES EN PROTECCION, DEFENSA Y SEGURIDAD/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/MINECO//TEC2013-47037-C5-1-R/ES/SOLUCIONES TECNOLOGICAS COMPACTAS PARA DISPOSITIVOS PASIVOS DE ALTA FRECUENCIA CON RESPUESTAS AVANZADAS Y RECONFIGURABLES/ | es_ES |
dc.rights.accessRights | Abierto | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Instituto Universitario de Telecomunicación y Aplicaciones Multimedia - Institut Universitari de Telecomunicacions i Aplicacions Multimèdia | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Escuela Técnica Superior de Ingenieros de Telecomunicación - Escola Tècnica Superior d'Enginyers de Telecomunicació | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Escuela Politécnica Superior de Gandia - Escola Politècnica Superior de Gandia | es_ES |
dc.description.bibliographicCitation | Morro, JV.; Rodriguez Perez, AM.; Belenguer Martínez, Á.; Esteban González, H.; Boria Esbert, VE. (2016). Multilevel transition in empty substrate integrated waveguide. Electronics Letters. 52(18):1543-1544. https://doi.org/10.1049/el.2016.2558 | es_ES |
dc.description.accrualMethod | S | es_ES |
dc.relation.publisherversion | http://dx.doi.org/10.1049/el.2016.2558 | es_ES |
dc.description.upvformatpinicio | 1543 | es_ES |
dc.description.upvformatpfin | 1544 | es_ES |
dc.type.version | info:eu-repo/semantics/publishedVersion | es_ES |
dc.description.volume | 52 | es_ES |
dc.description.issue | 18 | es_ES |
dc.relation.senia | 316993 | es_ES |
dc.identifier.eissn | 1350-911X | |
dc.contributor.funder | Ministerio de Economía y Competitividad | es_ES |