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Performance study of a wide area SiPM array, ASICs controlled

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Performance study of a wide area SiPM array, ASICs controlled

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dc.contributor.author González Martínez, Antonio Javier es_ES
dc.contributor.author Majewski, Stanislaw es_ES
dc.contributor.author Barbera, J. es_ES
dc.contributor.author Conde Castellanos, Pablo Eloy es_ES
dc.contributor.author Correcher, C. es_ES
dc.contributor.author Hernández Hernández, Liczandro es_ES
dc.contributor.author Morera, C. es_ES
dc.contributor.author Vidal San Sebastián, Luis Fernando es_ES
dc.contributor.author Sánchez Martínez, Filomeno es_ES
dc.contributor.author Stolin, A. es_ES
dc.contributor.author Benlloch Baviera, Jose María es_ES
dc.date.accessioned 2017-06-29T07:25:27Z
dc.date.available 2017-06-29T07:25:27Z
dc.date.issued 2015-02
dc.identifier.issn 0018-9499
dc.identifier.uri http://hdl.handle.net/10251/84087
dc.description.abstract In this paper, the capabilities of a wide-area gamma ray photosensor based on a SiPM array are investigated. For this purpose, we have mounted an array of 144 SiPMs with individual active area of mm and a pitch of mm, thus covering an active area of mm. Themeasurements were performed by coupling the SiPM array to LYSO crystal arrays of different pixel size (mm, mm, and mm) and 10-12 mm thicknesses. The SiPM array was controlled by means of three ASICs, and the SiPM signals were multiplexed in order to determine the gamma ray impact position by means of implementing the Anger logic algorithm in the ASIC. The optimum bias voltage and temperature dependence of the gamma ray sensor were determined. An energy resolution as good as 8%, for individual crystal pixels, were reached at 5 V overvoltage. The ASICs design allows one to "activate" different photosensor array areas. This feature has been used to evaluate the detector performance as a function of the crystal pixel size and the photosensor dark noise contribution. In this work we also show the system capability to provide depth-of-interaction (DOI) information by means of implementing a two-layer staggered approach. We have found that accurate DOI information is obtained when the ASICs enabled an SiPM active area as high as mm (SiPMs). es_ES
dc.language Inglés es_ES
dc.publisher Institute of Electrical and Electronics Engineers (IEEE) es_ES
dc.relation.ispartof IEEE Transactions on Nuclear Science es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject Application-specific integrated circuits (ASICs) es_ES
dc.subject Gamma-ray detectors es_ES
dc.subject Photodetectors es_ES
dc.subject Positron emission tomography (PET) instrumentation es_ES
dc.subject Scintillators es_ES
dc.title Performance study of a wide area SiPM array, ASICs controlled es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1109/TNS.2014.2359742
dc.rights.accessRights Cerrado es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto de Instrumentación para Imagen Molecular - Institut d'Instrumentació per a Imatge Molecular es_ES
dc.description.bibliographicCitation González Martínez, AJ.; Majewski, S.; Barbera, J.; Conde Castellanos, PE.; Correcher, C.; Hernández Hernández, L.; Morera, C.... (2015). Performance study of a wide area SiPM array, ASICs controlled. IEEE Transactions on Nuclear Science. 62(1):19-26. doi:10.1109/TNS.2014.2359742 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http://dx.doi.org/10.1109/TNS.2014.2359742 es_ES
dc.description.upvformatpinicio 19 es_ES
dc.description.upvformatpfin 26 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 62 es_ES
dc.description.issue 1 es_ES
dc.relation.senia 283574 es_ES


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