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Modelling of GaAsP/InGaAs/GaAs strain-balanced multiple-quantum well solar cells

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Modelling of GaAsP/InGaAs/GaAs strain-balanced multiple-quantum well solar cells

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Cabrera, CI.; Rimada, JC.; Connolly, JP.; Hernandez, L. (2013). Modelling of GaAsP/InGaAs/GaAs strain-balanced multiple-quantum well solar cells. Journal of Applied Physics. 113(2):24512-1-24512-7. doi:10.1063/1.4775404

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Title: Modelling of GaAsP/InGaAs/GaAs strain-balanced multiple-quantum well solar cells
Author: Cabrera, C. I. Rimada, J. C. Connolly, James Patrick Hernandez, L.
UPV Unit: Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica
Issued date:
Abstract:
A model of strain balanced quantum well solar cells is presented, together with a high efficiency design for a GaAsP/InGaAs/GaAs device. The effect of tensile and compressive strain on bandstructure is considered in order ...[+]
Subjects: Quantum wells , Solar cells , III-V semiconductors , Thin film III-V and II-VI based solar cells
Copyrigths: Cerrado
Source:
Journal of Applied Physics. (issn: 0021-8979 )
DOI: 10.1063/1.4775404
Publisher:
AIP Publishing
Publisher version: http://dx.doi.org/10.1063/1.4775404
Type: Artículo

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