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Effect of temperature in bands structure, effective mass and correlation with magneto-transport properties in a nanostructure far-infrared detector superlattice

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Effect of temperature in bands structure, effective mass and correlation with magneto-transport properties in a nanostructure far-infrared detector superlattice

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dc.contributor.author Idbaha, A. es_ES
dc.contributor.author Nafidi, A. es_ES
dc.contributor.author Khallouq, K. es_ES
dc.contributor.author Charifi, H. es_ES
dc.contributor.author Chaib, H. es_ES
dc.contributor.author Marí, B. es_ES
dc.contributor.author Mollar García, Miguel Alfonso es_ES
dc.contributor.author Singh, K. Chander es_ES
dc.contributor.author Khalal, A. es_ES
dc.contributor.author Massaq, M. es_ES
dc.contributor.author El Gouti, T. es_ES
dc.contributor.author Taleb, T. Ait es_ES
dc.date.accessioned 2017-06-30T14:56:04Z
dc.date.available 2017-06-30T14:56:04Z
dc.date.issued 2013-11
dc.identifier.issn 1454-4164
dc.identifier.uri http://hdl.handle.net/10251/84267
dc.description.abstract We report here the effect of temperature in bands structure performed in the envelope function formalism, effective mass and magneto- transport properties of n-type HgTe (d(1)=8.6 nm) /CdTe (d(2)=3.2 nm) superlattices (SLs). When d(2) increase the gap E-g(Gamma) decrease to zero, at the transition semiconductor to semimetal conductivity, and become negative accusing a semimetallic conduction after the point T'(d(2)T', ET'). d(2)T' and ET' increases with temperature and removes the transition to higher d(2). Eg(Gamma) increases from 48 meV at 4.2 K to 105 meV at 300K. The Fermi level is constant (E-F(2D) approximate to 90 meV) until 77K and increases to 167 meV at 300K. Our Theoretical calculations have provided good agreement with the experimental data. The formalism used here predicts that the system is semiconductor for our ratio d(1)/d(2) = 2.69, when d(2) < 100 nm. In our case, d(2)=3.2 nm and E-g (Gamma,77K) = 60 meV so this sample is a two-dimensional far-infrared detector semiconductor (12 mu m<lambda(c)<28 mu m). es_ES
dc.language Inglés es_ES
dc.publisher INOE Publishing House es_ES
dc.relation.ispartof Journal of Optoelectronics and Advanced Materials es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject Superlattice HgTe/CdTe es_ES
dc.subject Band structure es_ES
dc.subject Magneto-transport properties es_ES
dc.subject Effective mass es_ES
dc.subject Envelope function formalism es_ES
dc.subject Hall effect es_ES
dc.subject Shubnikov-de Haas effect es_ES
dc.subject Far infrared detector es_ES
dc.subject.classification FISICA APLICADA es_ES
dc.title Effect of temperature in bands structure, effective mass and correlation with magneto-transport properties in a nanostructure far-infrared detector superlattice es_ES
dc.type Artículo es_ES
dc.rights.accessRights Cerrado es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada es_ES
dc.description.bibliographicCitation Idbaha, A.; Nafidi, A.; Khallouq, K.; Charifi, H.; Chaib, H.; Marí, B.; Mollar García, MA.... (2013). Effect of temperature in bands structure, effective mass and correlation with magneto-transport properties in a nanostructure far-infrared detector superlattice. Journal of Optoelectronics and Advanced Materials. 15(11-12):1275-1279. http://hdl.handle.net/10251/84267 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion https://joam.inoe.ro/index.php?option=magazine&op=view&idu=3349&catid=81 es_ES
dc.description.upvformatpinicio 1275 es_ES
dc.description.upvformatpfin 1279 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 15 es_ES
dc.description.issue 11-12 es_ES
dc.relation.senia 264017 es_ES
dc.identifier.eissn 1841-7132


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