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dc.contributor.author | Solis Díaz, Cecilia | es_ES |
dc.contributor.author | Somacescu, Simona | es_ES |
dc.contributor.author | Palafox, E. | es_ES |
dc.contributor.author | Balaguer Ramírez, María | es_ES |
dc.contributor.author | Serra Alfaro, José Manuel | es_ES |
dc.date.accessioned | 2017-07-06T11:32:28Z | |
dc.date.issued | 2014-10-23 | |
dc.identifier.issn | 1932-7447 | |
dc.identifier.uri | http://hdl.handle.net/10251/84590 | |
dc.description.abstract | NiFe2O4 (NFO) thin films were deposited on quartz substrates by rf magnetron sputtering, and the influence of the deposition conditions on their physic-chemical properties was studied. The films structure and the high temperature transport properties were analyzed as a function of the deposition temperature. The analysis of the total conductivity up to 800 degrees C in different pO(2) containing atmospheres showed a distinct electronic behavior of the films with regard to the bulk NFO material. Indeed, the thin films exhibit p-type electronic conductivity, while the bulk material is known to be a prevailing n-type electronic conductor. This difference is ascribed to the dissimilar concentration of Ni3+ in the thin films, as revealed by XPS analysis at room temperature. The bulk material with a low concentration of Ni3+ (Ni3+/Ni2+ ratio of 0.20) shows the expected n-type electronic conduction via electron hopping between Fe3+Fe2+. On the other hand, the NFO thin films annealed at 800 degrees C exhibit a Ni3+/Ni2+ ratio of 0.42 and show p-type conduction via hole hopping between Ni3+Ni2+ | es_ES |
dc.description.sponsorship | Funding from the Spanish Government (ENE2011-24761 and SEV-2012-0267 grants) is kindly acknowledged. The support of the Servicio de Microscopia Electronica of the Universidad Politecnica de Valencia is also acknowledged. S. Somacescu would like to thank Dr. Petre Osiceanu (Institute of Physical Chemistry, Romanian Academy) for support helpful discussion during XPS data interpretation. | en_EN |
dc.language | Inglés | es_ES |
dc.publisher | American Chemical Society | es_ES |
dc.relation.ispartof | Journal of Physical Chemistry C | es_ES |
dc.rights | Reserva de todos los derechos | es_ES |
dc.subject | Thin-films | es_ES |
dc.subject | Electronic conductors | es_ES |
dc.subject | Nickel | es_ES |
dc.subject | Iron | es_ES |
dc.subject | Spinel | es_ES |
dc.subject | NFO | es_ES |
dc.title | Particular Transport Properties of NiFe2O4 Thin Films at High Temperatures | es_ES |
dc.type | Artículo | es_ES |
dc.embargo.lift | 10000-01-01 | |
dc.embargo.terms | forever | es_ES |
dc.identifier.doi | 10.1021/jp506938k | |
dc.relation.projectID | info:eu-repo/grantAgreement/MINECO//SEV-2012-0267/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/MICINN//ENE2011-24761/ES/DESARROLLO DE NUEVOS DISPOSITIVOS IONICOS PARA LA PRODUCCION EFICIENTE Y SOSTENIBLE DE ENERGIA Y PRODUCTOS QUIMICOS%2FCOMBUSTIBLES/ | es_ES |
dc.rights.accessRights | Cerrado | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Instituto Universitario Mixto de Tecnología Química - Institut Universitari Mixt de Tecnologia Química | es_ES |
dc.description.bibliographicCitation | Solis Díaz, C.; Somacescu, S.; Palafox, E.; Balaguer Ramírez, M.; Serra Alfaro, JM. (2014). Particular Transport Properties of NiFe2O4 Thin Films at High Temperatures. Journal of Physical Chemistry C. 118(42):24266-24273. https://doi.org/10.1021/jp506938k | es_ES |
dc.description.accrualMethod | S | es_ES |
dc.relation.publisherversion | http://dx.doi.org/10.1021/jp506938k | es_ES |
dc.description.upvformatpinicio | 24266 | es_ES |
dc.description.upvformatpfin | 24273 | es_ES |
dc.type.version | info:eu-repo/semantics/publishedVersion | es_ES |
dc.description.volume | 118 | es_ES |
dc.description.issue | 42 | es_ES |
dc.relation.senia | 276283 | es_ES |
dc.contributor.funder | Ministerio de Ciencia e Innovación | es_ES |
dc.contributor.funder | Universitat Politècnica de València | es_ES |