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Particular Transport Properties of NiFe2O4 Thin Films at High Temperatures

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Particular Transport Properties of NiFe2O4 Thin Films at High Temperatures

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dc.contributor.author Solis Díaz, Cecilia es_ES
dc.contributor.author Somacescu, Simona es_ES
dc.contributor.author Palafox, E. es_ES
dc.contributor.author Balaguer Ramírez, María es_ES
dc.contributor.author Serra Alfaro, José Manuel es_ES
dc.date.accessioned 2017-07-06T11:32:28Z
dc.date.issued 2014-10-23
dc.identifier.issn 1932-7447
dc.identifier.uri http://hdl.handle.net/10251/84590
dc.description.abstract NiFe2O4 (NFO) thin films were deposited on quartz substrates by rf magnetron sputtering, and the influence of the deposition conditions on their physic-chemical properties was studied. The films structure and the high temperature transport properties were analyzed as a function of the deposition temperature. The analysis of the total conductivity up to 800 degrees C in different pO(2) containing atmospheres showed a distinct electronic behavior of the films with regard to the bulk NFO material. Indeed, the thin films exhibit p-type electronic conductivity, while the bulk material is known to be a prevailing n-type electronic conductor. This difference is ascribed to the dissimilar concentration of Ni3+ in the thin films, as revealed by XPS analysis at room temperature. The bulk material with a low concentration of Ni3+ (Ni3+/Ni2+ ratio of 0.20) shows the expected n-type electronic conduction via electron hopping between Fe3+Fe2+. On the other hand, the NFO thin films annealed at 800 degrees C exhibit a Ni3+/Ni2+ ratio of 0.42 and show p-type conduction via hole hopping between Ni3+Ni2+ es_ES
dc.description.sponsorship Funding from the Spanish Government (ENE2011-24761 and SEV-2012-0267 grants) is kindly acknowledged. The support of the Servicio de Microscopia Electronica of the Universidad Politecnica de Valencia is also acknowledged. S. Somacescu would like to thank Dr. Petre Osiceanu (Institute of Physical Chemistry, Romanian Academy) for support helpful discussion during XPS data interpretation. en_EN
dc.language Inglés es_ES
dc.publisher American Chemical Society es_ES
dc.relation Spanish Government ENE2011-24761 SEV-2012-0267 es_ES
dc.relation Servicio de Microscopia Electronica of the Universidad Politecnica de Valencia es_ES
dc.relation.ispartof Journal of Physical Chemistry C es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject Thin-films es_ES
dc.subject Electronic conductors es_ES
dc.subject Nickel es_ES
dc.subject Iron es_ES
dc.subject Spinel es_ES
dc.subject NFO es_ES
dc.title Particular Transport Properties of NiFe2O4 Thin Films at High Temperatures es_ES
dc.type Artículo es_ES
dc.embargo.lift 10000-01-01
dc.embargo.terms forever es_ES
dc.identifier.doi 10.1021/jp506938k
dc.rights.accessRights Cerrado es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto Universitario Mixto de Tecnología Química - Institut Universitari Mixt de Tecnologia Química es_ES
dc.description.bibliographicCitation Solis Díaz, C.; Somacescu, S.; Palafox, E.; Balaguer Ramirez, M.; Serra Alfaro, JM. (2014). Particular Transport Properties of NiFe2O4 Thin Films at High Temperatures. Journal of Physical Chemistry C. 118(42):24266-24273. doi:10.1021/jp506938k es_ES
dc.description.accrualMethod Senia es_ES
dc.relation.publisherversion http://dx.doi.org/10.1021/jp506938k es_ES
dc.description.upvformatpinicio 24266 es_ES
dc.description.upvformatpfin 24273 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 118 es_ES
dc.description.issue 42 es_ES
dc.relation.senia 276283 es_ES


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