Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates

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dc.contributor.authorSarti, F.es_ES
dc.contributor.authorMuñoz Matutano, Guillermoes_ES
dc.contributor.authorBauer, D.es_ES
dc.contributor.authorDotti, N.es_ES
dc.contributor.authorBietti, S.es_ES
dc.contributor.authorIsella, G.es_ES
dc.contributor.authorVinattieri, A.es_ES
dc.contributor.authorSanguinetti, S.es_ES
dc.contributor.authorGurioli, M.es_ES
dc.date.accessioned2014-11-24T13:10:35Z
dc.date.available2014-11-24T13:10:35Z
dc.date.issued2013-12-14
dc.description.abstractThe multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexes. Our findings demonstrate the prospect of exploiting extrinsic centers for generating entangled photon pairs on a Si based device.es_ES
dc.description.accrualMethodSes_ES
dc.description.bibliographicCitationSarti, F.; Muñoz Matutano, G.; Bauer, D.; Dotti, N.; Bietti, S.; Isella, G.; Vinattieri, A.... (2013). Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates. Journal of Applied Physics. 114(22):2243141-2243143. doi:10.1063/1.4844375es_ES
dc.description.issue22es_ES
dc.description.referencesKimble, H. J. (2008). The quantum internet. Nature, 453(7198), 1023-1030. doi:10.1038/nature07127es_ES
dc.description.referencesBouwmeester, D., Pan, J.-W., Mattle, K., Eibl, M., Weinfurter, H., & Zeilinger, A. (1997). Experimental quantum teleportation. Nature, 390(6660), 575-579. doi:10.1038/37539es_ES
dc.description.referencesShields, A. J. (2007). Semiconductor quantum light sources. Nature Photonics, 1(4), 215-223. doi:10.1038/nphoton.2007.46es_ES
dc.description.referencesAkopian, N., Lindner, N. H., Poem, E., Berlatzky, Y., Avron, J., Gershoni, D., … Petroff, P. M. (2006). Entangled Photon Pairs from Semiconductor Quantum Dots. Physical Review Letters, 96(13). doi:10.1103/physrevlett.96.130501es_ES
dc.description.referencesDousse, A., Suffczyński, J., Beveratos, A., Krebs, O., Lemaître, A., Sagnes, I., … Senellart, P. (2010). Ultrabright source of entangled photon pairs. Nature, 466(7303), 217-220. doi:10.1038/nature09148es_ES
dc.description.referencesCavigli, L., Bietti, S., Accanto, N., Minari, S., Abbarchi, M., Isella, G., … Sanguinetti, S. (2012). High temperature single photon emitter monolithically integrated on silicon. Applied Physics Letters, 100(23), 231112. doi:10.1063/1.4726189es_ES
dc.description.referencesAccanto, N., Minari, S., Cavigli, L., Bietti, S., Isella, G., Vinattieri, A., … Gurioli, M. (2013). Kinetics of multiexciton complex in GaAs quantum dots on Si. Applied Physics Letters, 102(5), 053109. doi:10.1063/1.4790148es_ES
dc.description.referencesKurtsiefer, C., Mayer, S., Zarda, P., & Weinfurter, H. (2000). Stable Solid-State Source of Single Photons. Physical Review Letters, 85(2), 290-293. doi:10.1103/physrevlett.85.290es_ES
dc.description.referencesBrouri, R., Beveratos, A., Poizat, J.-P., & Grangier, P. (2000). Photon antibunching in the fluorescence of individual color centers in diamond. Optics Letters, 25(17), 1294. doi:10.1364/ol.25.001294es_ES
dc.description.referencesStrauf, S., Michler, P., Klude, M., Hommel, D., Bacher, G., & Forchel, A. (2002). Quantum Optical Studies on Individual Acceptor Bound Excitons in a Semiconductor. Physical Review Letters, 89(17). doi:10.1103/physrevlett.89.177403es_ES
dc.description.referencesMuller, A., Bianucci, P., Piermarocchi, C., Fornari, M., Robin, I. C., André, R., & Shih, C. K. (2006). Time-resolved photoluminescence spectroscopy of individual Te impurity centers inZnSe. Physical Review B, 73(8). doi:10.1103/physrevb.73.081306es_ES
dc.description.referencesSanaka, K., Pawlis, A., Ladd, T. D., Sleiter, D. J., Lischka, K., & Yamamoto, Y. (2012). Entangling Single Photons from Independently Tuned Semiconductor Nanoemitters. Nano Letters, 12(9), 4611-4616. doi:10.1021/nl301911tes_ES
dc.description.referencesIkezawa, M., Sakuma, Y., Zhang, L., Sone, Y., Mori, T., Hamano, T., … Masumoto, Y. (2012). Single-photon generation from a nitrogen impurity center in GaAs. Applied Physics Letters, 100(4), 042106. doi:10.1063/1.3679181es_ES
dc.description.referencesMinari, S., Cavigli, L., Sarti, F., Abbarchi, M., Accanto, N., Muñoz Matutano, G., … Gurioli, M. (2012). Single photon emission from impurity centers in AlGaAs epilayers on Ge and Si substrates. Applied Physics Letters, 101(17), 172105. doi:10.1063/1.4761939es_ES
dc.description.referencesMarcet, S., Ouellet-Plamondon, C., Éthier-Majcher, G., Saint-Jean, P., André, R., Klem, J. F., & Francoeur, S. (2010). Charged excitons and biexcitons bound to isoelectronic centers. Physical Review B, 82(23). doi:10.1103/physrevb.82.235311es_ES
dc.description.referencesJo, M., Mano, T., Kuroda, T., Sakuma, Y., & Sakoda, K. (2013). Visible single-photon emission from a nitrogen impurity center in AlAs. Applied Physics Letters, 102(6), 062107. doi:10.1063/1.4792315es_ES
dc.description.referencesAbbarchi, M., Mastrandrea, C., Kuroda, T., Mano, T., Vinattieri, A., Sakoda, K., & Gurioli, M. (2009). Poissonian statistics of excitonic complexes in quantum dots. Journal of Applied Physics, 106(5), 053504. doi:10.1063/1.3197848es_ES
dc.description.referencesKuroda, T., Sanguinetti, S., Gurioli, M., Watanabe, K., Minami, F., & Koguchi, N. (2002). Picosecond nonlinear relaxation of photoinjected carriers in a singleGaAs/Al0.3Ga0.7Asquantum dot. Physical Review B, 66(12). doi:10.1103/physrevb.66.121302es_ES
dc.description.referencesGammon, D., Snow, E. S., Shanabrook, B. V., Katzer, D. S., & Park, D. (1996). Fine Structure Splitting in the Optical Spectra of Single GaAs Quantum Dots. Physical Review Letters, 76(16), 3005-3008. doi:10.1103/physrevlett.76.3005es_ES
dc.description.referencesAbbarchi, M., Mastrandrea, C. A., Kuroda, T., Mano, T., Sakoda, K., Koguchi, N., … Gurioli, M. (2008). Exciton fine structure in strain-freeGaAs/Al0.3Ga0.7Asquantum dots: Extrinsic effects. Physical Review B, 78(12). doi:10.1103/physrevb.78.125321es_ES
dc.description.referencesHeiss, M., Fontana, Y., Gustafsson, A., Wüst, G., Magen, C., O’Regan, D. D., … Fontcuberta i Morral, A. (2013). Self-assembled quantum dots in a nanowire system for quantum photonics. Nature Materials, 12(5), 439-444. doi:10.1038/nmat3557es_ES
dc.description.upvformatpfin2243143es_ES
dc.description.upvformatpinicio2243141es_ES
dc.description.volume114es_ES
dc.identifier.doi10.1063/1.4844375
dc.identifier.issn0021-8979
dc.identifier.urihttps://riunet.upv.es/handle/10251/44639
dc.languageIngléses_ES
dc.publisherAmerican Institute of Physics (AIP)es_ES
dc.relation.ispartofJournal of Applied Physicses_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1063/1.4844375es_ES
dc.relation.references10.1038/nature07127es_ES
dc.relation.references10.1038/37539es_ES
dc.relation.references10.1038/nphoton.2007.46es_ES
dc.relation.references10.1103/PhysRevLett.96.130501es_ES
dc.relation.references10.1038/nature09148es_ES
dc.relation.references10.1063/1.4726189es_ES
dc.relation.references10.1063/1.4790148es_ES
dc.relation.references10.1103/PhysRevLett.85.290es_ES
dc.relation.references10.1364/OL.25.001294es_ES
dc.relation.references10.1103/PhysRevLett.89.177403es_ES
dc.relation.references10.1103/PhysRevB.73.081306es_ES
dc.relation.references10.1021/nl301911tes_ES
dc.relation.references10.1063/1.3679181es_ES
dc.relation.references10.1063/1.4761939es_ES
dc.relation.references10.1103/PhysRevB.82.235311es_ES
dc.relation.references10.1063/1.4792315es_ES
dc.relation.references10.1063/1.3197848es_ES
dc.relation.references10.1103/PhysRevB.66.121302es_ES
dc.relation.references10.1103/PhysRevLett.76.3005es_ES
dc.relation.references10.1103/PhysRevB.78.125321es_ES
dc.relation.references10.1038/nmat3557es_ES
dc.relation.senia266120
dc.rightsReserva de todos los derechoses_ES
dc.rights.accessRightsAbiertoes_ES
dc.subjectSingle photonses_ES
dc.subjectQuantum dotses_ES
dc.subjectSemiconductores_ES
dc.titleMultiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrateses_ES
dc.typeArtículoes_ES
dc.type.versioninfo:eu-repo/semantics/publishedVersiones_ES
dspace.entity.typePublication
upv.uuid773456ee-bdc0-4bb8-8bbb-ccec832dfd2ces_ES

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