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Structural, morphological and optical properties of In2S3 thin films obtained by SILAR method

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Structural, morphological and optical properties of In2S3 thin films obtained by SILAR method

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dc.contributor.author Sall, Thierno es_ES
dc.contributor.author Raidou, A. es_ES
dc.contributor.author Elfarrass, S. es_ES
dc.contributor.author Hartiti, B. es_ES
dc.contributor.author Marí, B. es_ES
dc.contributor.author Qachaou, A. es_ES
dc.contributor.author Fahoume, Mounir es_ES
dc.date.accessioned 2018-04-21T04:17:41Z
dc.date.available 2018-04-21T04:17:41Z
dc.date.issued 2014 es_ES
dc.identifier.issn 0306-8919 es_ES
dc.identifier.uri http://hdl.handle.net/10251/100795
dc.description.abstract [EN] In2S3 thin films have been elaborated onto glass substrate by SILAR method at room temperature using different immersion time in the solution of cation and anion and fixing the rinsing time. The film composition, morphology and structure were investigated using energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM) and X-ray diffraction techniques. Optical properties, such transmission and band gap have been also analyzed. The effects of annealing on the morphological structure thin films are also described. The x-rays diffraction spectra indicated that the formed compounds are β-In2S3 polycrystalline thin films with In6S7 as second phase in sample S1 and sample S2 and no another phase in sample 3. SEM revealed homogeneous and relatively uniform films and EDAX shows sample 3 with S/In=1.44. For sample 1 and sample 2, we noted an increase of band gap when rinsing time increases. es_ES
dc.language Inglés es_ES
dc.publisher Springer-Verlag es_ES
dc.relation.ispartof Optical and Quantum Electronics es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject In2S3 es_ES
dc.subject Thin films es_ES
dc.subject SILAR method es_ES
dc.subject Photovoltaic es_ES
dc.subject.classification FISICA APLICADA es_ES
dc.title Structural, morphological and optical properties of In2S3 thin films obtained by SILAR method es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1007/s11082-013-9786-x es_ES
dc.rights.accessRights Cerrado es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto de Diseño para la Fabricación y Producción Automatizada - Institut de Disseny per a la Fabricació i Producció Automatitzada es_ES
dc.description.bibliographicCitation Sall, T.; Raidou, A.; Elfarrass, S.; Hartiti, B.; Marí, B.; Qachaou, A.; Fahoume, M. (2014). Structural, morphological and optical properties of In2S3 thin films obtained by SILAR method. Optical and Quantum Electronics. 46(1):247-257. doi:10.1007/s11082-013-9786-x es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion https://doi.org/10.1007/s11082-013-9786-x es_ES
dc.description.upvformatpinicio 247 es_ES
dc.description.upvformatpfin 257 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 46 es_ES
dc.description.issue 1 es_ES
dc.relation.pasarela S\264015 es_ES
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