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On the influence of interface charging dynamics and stressing conditions in strained silicon devices

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On the influence of interface charging dynamics and stressing conditions in strained silicon devices

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Olivares-Sánchez-Mellado, I.; Ivanova-Angelova, T.; Sanchis Kilders, P. (2017). On the influence of interface charging dynamics and stressing conditions in strained silicon devices. Scientific Reports. 7(7241):1-8. doi:10.1038/s41598-017-05067-9

Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/103772

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Title: On the influence of interface charging dynamics and stressing conditions in strained silicon devices
Author:
UPV Unit: Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions
Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica
Issued date:
Abstract:
[EN] The performance of strained silicon devices based on the deposition of a top silicon nitride layer with high stress have been thoroughly analyzed by means of simulations and experimental results. Results clearly ...[+]
Subjects: Strained silicon , Silicon photonics
Copyrigths: Reconocimiento (by)
Source:
Scientific Reports. (issn: 2045-2322 )
DOI: 10.1038/s41598-017-05067-9
Publisher:
Nature Publishing Group
Publisher version: http://doi.org/10.1038/s41598-017-05067-9
Thanks:
Funding from projects TEC2016-76849-C2-2-R (MINECO/FEDER, UE) and NANOMET PLUS-Conselleria d'EducaciA<SUP>3</SUP>, Cultura i Esport - PROMETEOII/2014/034 is acknowledged. Irene Olivares also acknowledges the Universitat ...[+]
Type: Artículo

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