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On the influence of interface charging dynamics and stressing conditions in strained silicon devices

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On the influence of interface charging dynamics and stressing conditions in strained silicon devices

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dc.contributor.author Olivares-Sánchez-Mellado, Irene es_ES
dc.contributor.author Ivanova-Angelova, Todora es_ES
dc.contributor.author Sanchis Kilders, Pablo es_ES
dc.date.accessioned 2018-06-11T04:24:35Z
dc.date.available 2018-06-11T04:24:35Z
dc.date.issued 2017 es_ES
dc.identifier.issn 2045-2322 es_ES
dc.identifier.uri http://hdl.handle.net/10251/103772
dc.description.abstract [EN] The performance of strained silicon devices based on the deposition of a top silicon nitride layer with high stress have been thoroughly analyzed by means of simulations and experimental results. Results clearly indicate that the electro-optic static response is basically governed by carrier efects. A frst evidence is the appearance of a variable optical absorption with the applied voltage that should not occur in case of having a purely electro-optic Pockels efect. However, hysteresis and saturation efects are also observed. We demonstrate that such efects are mainly due to the carrier trapping dynamics at the interface between the silicon and the silicon nitride and their infuence on the silicon nitride charge. This theory is further confrmed by analyzing identical devices but with the silicon nitride cladding layer optimized to have intrinsic stresses of opposite sign and magnitude. The latter is achieved by a post annealing process which produces a defect healing and consequently a reduction of the silicon nitride charge. Raman measurements are also carried out to confrm the obtained results. es_ES
dc.description.sponsorship Funding from projects TEC2016-76849-C2-2-R (MINECO/FEDER, UE) and NANOMET PLUS-Conselleria d'EducaciA<SUP>3</SUP>, Cultura i Esport - PROMETEOII/2014/034 is acknowledged. Irene Olivares also acknowledges the Universitat Politecnica de Valencia for funding his research staff training (FPI) grant. The authors would also like to thank Steven Van Roye from Ghent University for participating in the measurements of the annealed samples. es_ES
dc.language Inglés es_ES
dc.publisher Nature Publishing Group es_ES
dc.relation.ispartof Scientific Reports es_ES
dc.rights Reconocimiento (by) es_ES
dc.subject Strained silicon es_ES
dc.subject Silicon photonics es_ES
dc.subject.classification TEORIA DE LA SEÑAL Y COMUNICACIONES es_ES
dc.title On the influence of interface charging dynamics and stressing conditions in strained silicon devices es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1038/s41598-017-05067-9 es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MINECO//TEC2016-76849-C2-2-R/ES/DESARROLLO DE OXIDOS METALICOS DE TRANSICION CON TECNOLOGIA DE SILICIO PARA APLICACIONES DE CONMUTACION E INTERCONEXION OPTICAS EFICIENTES Y RESPETUOSAS CON EL MEDIO AMBIENTE/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/GVA//PROMETEOII%2F2014%2F034/ES/Nanomet Plus/ es_ES
dc.rights.accessRights Abierto es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica es_ES
dc.description.bibliographicCitation Olivares-Sánchez-Mellado, I.; Ivanova-Angelova, T.; Sanchis Kilders, P. (2017). On the influence of interface charging dynamics and stressing conditions in strained silicon devices. Scientific Reports. 7(7241):1-8. https://doi.org/10.1038/s41598-017-05067-9 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http://doi.org/10.1038/s41598-017-05067-9 es_ES
dc.description.upvformatpinicio 1 es_ES
dc.description.upvformatpfin 8 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 7 es_ES
dc.description.issue 7241 es_ES
dc.identifier.pmid 28775297 en_EN
dc.identifier.pmcid PMC5543050 en_EN
dc.relation.pasarela S\349068 es_ES
dc.contributor.funder Generalitat Valenciana es_ES
dc.contributor.funder Ministerio de Economía y Competitividad es_ES
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