Muñoz Muñoz, P.; Mico-Cabanes, G.; Bru-Orgiles, LA.; Pastor Abellán, D.; Pérez-López, D.; Doménech Gómez, JD.; Fernández, J.... (2017). Silicon Nitride Photonic Integration Platforms for Visible, Near-Infrared and Mid-Infrared Applications. Sensors. 17 (9)(2088):1-25. https://doi.org/10.3390/s17092088
Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/103988
Título:
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Silicon Nitride Photonic Integration Platforms for Visible, Near-Infrared and Mid-Infrared Applications
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Autor:
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Muñoz Muñoz, Pascual
Mico-Cabanes, Gloria
Bru-Orgiles, Luis Alberto
Pastor Abellán, Daniel
Pérez-López, Daniel
Doménech Gómez, José David
Fernández, Juan
Baños López, Rocío
Gargallo-Jaquotot, Bernardo
Alemany Server, Rubén
Sanchez, Ana M.
Cirera, Josep Maria
Mas, Roser
Domínguez-Horna, Carlos
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Entidad UPV:
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Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions
Universitat Politècnica de València. Instituto Universitario de Telecomunicación y Aplicaciones Multimedia - Institut Universitari de Telecomunicacions i Aplicacions Multimèdia
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Fecha difusión:
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Resumen:
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[EN] Silicon nitride photonics is on the rise owing to the broadband nature of the material,
allowing applications of biophotonics, tele/datacom, optical signal processing and sensing,
from visible, through near to ...[+]
[EN] Silicon nitride photonics is on the rise owing to the broadband nature of the material,
allowing applications of biophotonics, tele/datacom, optical signal processing and sensing,
from visible, through near to mid-infrared wavelengths. In this paper, a review of the state of
the art of silicon nitride strip waveguide platforms is provided, alongside the experimental results
on the development of a versatile 300 nm guiding film height silicon nitride platform.
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Palabras clave:
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Silicon nitride photonics
,
Propagation loss
,
Group index
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Group velocity dispersion
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Birefringence
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Ull-field optical measurements
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Silicon photonics
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Photonic integrated circuits
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Generic integration
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Multi-project wafer
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Derechos de uso:
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Reconocimiento (by)
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Fuente:
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Sensors. (eissn:
1424-8220
)
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DOI:
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10.3390/s17092088
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Editorial:
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MDPI AG
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Versión del editor:
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http://doi.org/10.3390/s17092088
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Código del Proyecto:
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info:eu-repo/grantAgreement/MINECO//TEC2013-42332-P/ES/PHOTONIC INTEGRATED FILTERS FOR ENHANCED SIGNAL PROCESSING/
...[+]
info:eu-repo/grantAgreement/MINECO//TEC2013-42332-P/ES/PHOTONIC INTEGRATED FILTERS FOR ENHANCED SIGNAL PROCESSING/
info:eu-repo/grantAgreement/EC/H2020/687777/EU/Photonic Integrated Circuits Accessible to Everyone/
info:eu-repo/grantAgreement/MINECO//TEC2015-69787-REDT/ES/PHOTONIC INTEGRATED CIRCUITS FOR TELECOM & BIO/
info:eu-repo/grantAgreement/MINECO//TEC2016-80385-P/ES/SILICON NITRIDE SPECTROMETERS/
info:eu-repo/grantAgreement/GVA//PROMETEOII%2F2013%2F012/ES/TECNOLOGIAS DE NUEVA GENERACION EN FOTONICA DE MICROONDAS (NEXT GENERATION MICROWAVE PHOTONIC TECHNOLOGIES)/
info:eu-repo/grantAgreement/MINECO//BES-2014-068523/ES/BES-2014-068523/
info:eu-repo/grantAgreement/MINECO//PTA2015-1309-I/
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Agradecimientos:
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The authors acknowledge financial support through projects TEC2013-42332-P, TEC2015-69787-REDT PIC4TB, TEC2016-80385-P SINXPECT, TEC2014-54449-C3-1-R, GVA PROMETEO 2013/012 and EC H2020-ICT-27-2015 PICs4all. G.M. acknowledges ...[+]
The authors acknowledge financial support through projects TEC2013-42332-P, TEC2015-69787-REDT PIC4TB, TEC2016-80385-P SINXPECT, TEC2014-54449-C3-1-R, GVA PROMETEO 2013/012 and EC H2020-ICT-27-2015 PICs4all. G.M. acknowledges BES-2014-068523, L.A.B. acknowledges PTA2015-11309-I, J.F. acknowledges DI-15-08031 and R.B. acknowledges PTQ-15-07966.
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Tipo:
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Artículo
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