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dc.contributor.author | Ionescu, A. | es_ES |
dc.contributor.author | Vaz, C.A.F. | es_ES |
dc.contributor.author | Trypiniotis, T. | es_ES |
dc.contributor.author | Gürtler, C. M. | es_ES |
dc.contributor.author | Vickers, M. E. | es_ES |
dc.contributor.author | García Miquel, Ángel Héctor | es_ES |
dc.contributor.author | Bland, J.A.C. | es_ES |
dc.date.accessioned | 2018-07-06T04:26:13Z | |
dc.date.available | 2018-07-06T04:26:13Z | |
dc.date.issued | 2005 | es_ES |
dc.identifier.issn | 0304-8853 | es_ES |
dc.identifier.uri | http://hdl.handle.net/10251/105346 | |
dc.description.abstract | [EN] In this study, we report experimental results on the structural and magnetic properties of epitaxial Fe3Si films grown on GaAs(0 0 1) by co-evaporation. X-ray reflectivity shows that relatively smooth interfaces are obtained (roughness approximate to0.7 nm for the Fe3Si/GaAs interface), while SQUID magnetometry yields a magnetic moment Of 0.9 mu(B)/atom at room temperature, close to the bulk value. From magneto-optic Kerr effect measurements the cubic anisotropy constant was estimated as K-1 = 3.1 X 10(4) erg/cm(3). The electrical transport properties were also investigated by I-V and photoexcitation measurements, which show a Schottky behaviour (with a barrier height of 0.51 eV) and that spin detection is possible in this system. (0 2004 Elsevier B.V. All rights reserved. | es_ES |
dc.language | Inglés | es_ES |
dc.publisher | Elsevier | es_ES |
dc.relation.ispartof | Journal of Magnetism and Magnetic Materials | es_ES |
dc.rights | Reserva de todos los derechos | es_ES |
dc.subject | Fe3Si/GaAs(001) | es_ES |
dc.subject | Interface roughness | es_ES |
dc.subject | Magnetic moment | es_ES |
dc.subject | Schottky barrier | es_ES |
dc.subject | Spin detection | es_ES |
dc.subject.classification | TECNOLOGIA ELECTRONICA | es_ES |
dc.title | Magnetic and structural properties of stoichiometric thin Fe3Si/GaAs(001) films | es_ES |
dc.type | Artículo | es_ES |
dc.identifier.doi | 10.1016/j.jmmm.2004.09.042 | es_ES |
dc.rights.accessRights | Cerrado | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Departamento de Ingeniería Electrónica - Departament d'Enginyeria Electrònica | es_ES |
dc.description.bibliographicCitation | Ionescu, A.; Vaz, C.; Trypiniotis, T.; Gürtler, CM.; Vickers, ME.; García Miquel, ÁH.; Bland, J. (2005). Magnetic and structural properties of stoichiometric thin Fe3Si/GaAs(001) films. Journal of Magnetism and Magnetic Materials. 286:72-76. doi:10.1016/j.jmmm.2004.09.042 | es_ES |
dc.description.accrualMethod | S | es_ES |
dc.relation.publisherversion | http://doi.org/10.1016/j.jmmm.2004.09.042 | es_ES |
dc.description.upvformatpinicio | 72 | es_ES |
dc.description.upvformatpfin | 76 | es_ES |
dc.type.version | info:eu-repo/semantics/publishedVersion | es_ES |
dc.description.volume | 286 | es_ES |
dc.relation.pasarela | S\27172 | es_ES |