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Optoelectronics properties of TiO2:Cu thin films obtained by sol gel method

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Optoelectronics properties of TiO2:Cu thin films obtained by sol gel method

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dc.contributor.author Essalhi, Zineb es_ES
dc.contributor.author Hartiti, Bouchaib es_ES
dc.contributor.author Lfakir, Abderrazak es_ES
dc.contributor.author Marí, B. es_ES
dc.contributor.author Thevenin, Philippe es_ES
dc.date.accessioned 2018-09-17T07:34:55Z
dc.date.available 2018-09-17T07:34:55Z
dc.date.issued 2017 es_ES
dc.identifier.issn 0306-8919 es_ES
dc.identifier.uri http://hdl.handle.net/10251/107405
dc.description.abstract [EN] In this research, Cu-doped TiO2 thin films have been successfully deposited onto a glass substrate by Sol¿gel technique using dip coating method. The films were annealed at different annealing temperatures (400¿500 "C) for 1 h. The structural, optical and electrical properties of the films were investigated and compared using X-ray Diffraction,UV¿visible spectrophotometer and 4-point probe method. Optical analysis by mean transmittance T(k) and absorption A(k) measurements in the wavelength range between 300 to 800 nm allow us to determine the indirect band gap energy. DRX analysis of our thin films of TiO2:Cu shows that the intensities of the line characteristic of anatase phase increasing in function of the temperature. es_ES
dc.description.sponsorship This work has been partially supported by LGOPS Laboratory University Polytechnic University of Valencia, Spain and LMOPS Laboratory University of Lorraine France. Technical support from LMOPS and LGOPS labs is gratefully acknowledged. es_ES
dc.language Inglés es_ES
dc.publisher Springer-Verlag es_ES
dc.relation.ispartof Optical and Quantum Electronics es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject Cu-doped TiO2 es_ES
dc.subject Anatase es_ES
dc.subject Dip coating es_ES
dc.subject Optical properties es_ES
dc.subject.classification FISICA APLICADA es_ES
dc.title Optoelectronics properties of TiO2:Cu thin films obtained by sol gel method es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1007/s11082-017-1142-0 es_ES
dc.rights.accessRights Cerrado es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada es_ES
dc.description.bibliographicCitation Essalhi, Z.; Hartiti, B.; Lfakir, A.; Marí, B.; Thevenin, P. (2017). Optoelectronics properties of TiO2:Cu thin films obtained by sol gel method. Optical and Quantum Electronics. 49(9). doi:10.1007/s11082-017-1142-0 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http://doi.org/10.1007/s11082-017-1142-0 es_ES
dc.description.upvformatpinicio 301 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 49 es_ES
dc.description.issue 9 es_ES
dc.relation.pasarela S\351881 es_ES
dc.contributor.funder Universitat Politècnica de València
dc.contributor.funder Université de Lorraine
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