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dc.contributor.author | Díaz-Calleja, R. | es_ES |
dc.contributor.author | García Bernabé, Abel | es_ES |
dc.contributor.author | Sanchis Sánchez, María Jesús | es_ES |
dc.contributor.author | del Castillo, L.F. | es_ES |
dc.date.accessioned | 2018-11-26T05:33:08Z | |
dc.date.available | 2018-11-26T05:33:08Z | |
dc.date.issued | 2000 | es_ES |
dc.identifier.issn | 0021-9606 | es_ES |
dc.identifier.uri | http://hdl.handle.net/10251/113042 | |
dc.description.abstract | [EN] The second-order memory function ~SOMF! for the dicyclohexylmetyl-2metyl succinate is obtained by using simple numerical manipulation of the experimental dielectric data. According to the prescription given in a previous paper @J. Chem. Phys. 109, 9057 ~1998!#, the frequency behavior of the real and imaginary parts of the SOMF is discussed in terms of the Havriliak-Negami equation of the dielectric function, and together with the three-variable model describing the evolution of the torque-autocorrelation function. Furthermore, in this paper we present the temperature dependence of the parameters, which characterize the SOMF behavior for two ester substances. © 2000 American Institute of Physics. @S0021-9606~00!51048-4# | es_ES |
dc.description.sponsorship | This work was supported in part by the UPV. One of the authors L. F del C. wishes to thank DGAPA-UNAM for support from Grant No. IN119200. Authors of the UPV also thank the Science and Technology Office of Spain for Grant No. MAT 1999-1127-C04-03. | es_ES |
dc.language | Inglés | es_ES |
dc.publisher | American Institute of Physics | es_ES |
dc.relation.ispartof | The Journal of Chemical Physics | es_ES |
dc.rights | Reserva de todos los derechos | es_ES |
dc.subject | Dielectrics | es_ES |
dc.subject | Dielectric function | es_ES |
dc.subject | Real functions | es_ES |
dc.subject | Dielectric relaxation | es_ES |
dc.subject.classification | MAQUINAS Y MOTORES TERMICOS | es_ES |
dc.subject.classification | TERMODINAMICA APLICADA (UPV) | es_ES |
dc.title | Memory function on dielectric relaxation | es_ES |
dc.type | Artículo | es_ES |
dc.identifier.doi | 10.1063/1.1326913 | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/MECD//MAT1999-1127-C04-03/ES/DESARROLLO Y PROPIEDADES DE NUEVOS MATERIALES BARRERA CON USO POTENCIAL EN SEPARACION DE GASES, IONES/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/UNAM//IN119200/ | es_ES |
dc.rights.accessRights | Abierto | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Departamento de Termodinámica Aplicada - Departament de Termodinàmica Aplicada | es_ES |
dc.description.bibliographicCitation | Díaz-Calleja, R.; García Bernabé, A.; Sanchis Sánchez, MJ.; Del Castillo, L. (2000). Memory function on dielectric relaxation. The Journal of Chemical Physics. 113(24):11258-11263. https://doi.org/10.1063/1.1326913 | es_ES |
dc.description.accrualMethod | S | es_ES |
dc.relation.publisherversion | https://doi.org/10.1063/1.1326913 | es_ES |
dc.description.upvformatpinicio | 11258 | es_ES |
dc.description.upvformatpfin | 11263 | es_ES |
dc.type.version | info:eu-repo/semantics/publishedVersion | es_ES |
dc.description.volume | 113 | es_ES |
dc.description.issue | 24 | es_ES |
dc.relation.pasarela | S\17521 | es_ES |
dc.contributor.funder | Universitat Politècnica de València | es_ES |
dc.contributor.funder | Universidad Nacional Autónoma de México | es_ES |
dc.contributor.funder | Ministerio de Educación, Cultura y Deporte | es_ES |