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Impact of the external resistance on the switching power consumption in VO2 nano gap junctions

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Impact of the external resistance on the switching power consumption in VO2 nano gap junctions

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Sánchez Diana, LD.; Rosa Escutia, Á.; Griol Barres, A.; Gutierrez Campo, AM.; Homm, P.; Van Bilzen, B.; Menghini, M.... (2017). Impact of the external resistance on the switching power consumption in VO2 nano gap junctions. Applied Physics Letters. 111(3):1-4. https://doi.org/10.1063/1.4994326

Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/132995

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Title: Impact of the external resistance on the switching power consumption in VO2 nano gap junctions
Author:
UPV Unit: Universitat Politècnica de València. Instituto Universitario de Telecomunicación y Aplicaciones Multimedia - Institut Universitari de Telecomunicacions i Aplicacions Multimèdia
Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica
Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions
Issued date:
Abstract:
[EN] The influence of an external resistance on the performance of VO2 nanogap junctions is analyzed and experimentally characterized. The current-voltage response shows the reversible metal-insulator transition typical ...[+]
Subjects: Vanadium dioxide , Transition-metal oxide , Switches , Power consumption , Photonics , Optic
Copyrigths: Reserva de todos los derechos
Source:
Applied Physics Letters. (issn: 0003-6951 )
DOI: 10.1063/1.4994326
Publisher:
American Institute of Physics
Publisher version: https://doi.org/10.1063/1.4994326
Project ID: info:eu-repo/grantAgreement/EC/FP7/619456/EU
Thanks:
This work was supported by the European Commission under Project No. FP7-ICT-2013-11-619456 SITOGA. Financial support from TEC2016-76849-C2-2-R and NANOMET Conselleria de Educacio, Cultura i Esport-PROMETEOII/2014 034 is ...[+]
Type: Artículo

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