Sánchez Diana, LD.; Rosa Escutia, Á.; Griol Barres, A.; Gutierrez Campo, AM.; Homm, P.; Van Bilzen, B.; Menghini, M.... (2017). Impact of the external resistance on the switching power consumption in VO2 nano gap junctions. Applied Physics Letters. 111(3):1-4. https://doi.org/10.1063/1.4994326
Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/132995
Title:
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Impact of the external resistance on the switching power consumption in VO2 nano gap junctions
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Author:
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Sánchez Diana, Luis David
Rosa Escutia, Álvaro
Griol Barres, Amadeu
Gutierrez Campo, Ana Maria
Homm, Pia
Van Bilzen, Bart
Menghini, Mariela
Locquet, Jean-Pierre
Sanchis Kilders, Pablo
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UPV Unit:
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Universitat Politècnica de València. Instituto Universitario de Telecomunicación y Aplicaciones Multimedia - Institut Universitari de Telecomunicacions i Aplicacions Multimèdia
Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica
Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions
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Issued date:
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Abstract:
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[EN] The influence of an external resistance on the performance of VO2 nanogap junctions is analyzed and experimentally characterized. The current-voltage response shows the reversible metal-insulator transition typical ...[+]
[EN] The influence of an external resistance on the performance of VO2 nanogap junctions is analyzed and experimentally characterized. The current-voltage response shows the reversible metal-insulator transition typical of VO2 based devices. When reaching the metallic state, the current through the VO2 junction is abruptly increased, which may result in electrical contact damage. Therefore, an external resistance in series with the VO2 junction is usually employed to limit the maximum current through the device. Our results indicate that the external resistance plays a key role in the switching power consumption showing an optimum value, which depends on the dimensions of the VO2 junction. In such a way, power consumption reductions up to 90% have been demonstrated by selecting the optimum external resistance value.
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Subjects:
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Vanadium dioxide
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Transition-metal oxide
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Switches
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Power consumption
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Photonics
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Optic
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Copyrigths:
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Reserva de todos los derechos
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Source:
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Applied Physics Letters. (issn:
0003-6951
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DOI:
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10.1063/1.4994326
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Publisher:
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American Institute of Physics
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Publisher version:
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https://doi.org/10.1063/1.4994326
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Project ID:
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info:eu-repo/grantAgreement/EC/FP7/619456/EU/Silicon CMOS compatible transition metal oxide technology for boosting highly integrated photonic devices with disruptive performance/
info:eu-repo/grantAgreement/MINECO//TEC2016-76849-C2-2-R/ES/DESARROLLO DE OXIDOS METALICOS DE TRANSICION CON TECNOLOGIA DE SILICIO PARA APLICACIONES DE CONMUTACION E INTERCONEXION OPTICAS EFICIENTES Y RESPETUOSAS CON EL MEDIO AMBIENTE/
info:eu-repo/grantAgreement/GVA//PROMETEOII%2F2014%2F034/ES/Nanomet Plus/
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Thanks:
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This work was supported by the European Commission under Project No. FP7-ICT-2013-11-619456 SITOGA. Financial support from TEC2016-76849-C2-2-R and NANOMET Conselleria de Educacio, Cultura i Esport-PROMETEOII/2014 034 is ...[+]
This work was supported by the European Commission under Project No. FP7-ICT-2013-11-619456 SITOGA. Financial support from TEC2016-76849-C2-2-R and NANOMET Conselleria de Educacio, Cultura i Esport-PROMETEOII/2014 034 is also acknowledged. P.H. acknowledges support from Becas Chile-CONICYT.
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Type:
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Artículo
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