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Thermo-optic coefficient of porous silicon in the infrared region and oxidation process at low temperatures

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Thermo-optic coefficient of porous silicon in the infrared region and oxidation process at low temperatures

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dc.contributor.author Martín-Sánchez, David es_ES
dc.contributor.author Kovylina, Miroslavna es_ES
dc.contributor.author Ponce-Alcántara, Salvador es_ES
dc.contributor.author García-Rupérez, Jaime es_ES
dc.date.accessioned 2020-04-17T12:49:18Z
dc.date.available 2020-04-17T12:49:18Z
dc.date.issued 2019-03-23 es_ES
dc.identifier.issn 0013-4651 es_ES
dc.identifier.uri http://hdl.handle.net/10251/140878
dc.description.abstract [EN] In this work, a porous silicon nanostructure has been fabricated by electrochemical means and used as a thermal sensor. The thermo-optic effect in the near infrared region has been experimentally studied based on spectroscopy measurements. Values of the thermo-optic coefficient between 3.2 and 7.9·10¿5 K¿1 have been obtained, depending on the porosity, reaching a maximum thermal sensitivity of 91 ± 3 pm/°C during the experiments carried out with the fabricated samples. Additionally, the oxidation process of the sensor at temperatures below 500 K has been studied, showing that the growth of the silicon oxide was dependent on the characteristics of the porous layers. Based on the experimental results, a mathematical model was developed to estimate the evolution of the oxidation process as a function of porosity and thickness. es_ES
dc.description.sponsorship The authors acknowledge the funding from the Spanish government through the project TEC2015-63838-C3-1-R-OPTONANOSENS. es_ES
dc.language Inglés es_ES
dc.publisher The Electrochemical Society es_ES
dc.relation info:eu-repo/grantAgreement/MINECO//TEC2015-63838-C3-1-R/ES/DETECCION DE TOXINAS Y AGENTES PATOGENOS MEDIANTE BIOSENSORES OPTICOS NANOMETRICOS PARA AMENAZAS NBQ/ es_ES
dc.relation.ispartof Journal of The Electrochemical Society es_ES
dc.rights Reconocimiento (by) es_ES
dc.subject Porous silicon es_ES
dc.subject Thermo-optic coefficient es_ES
dc.subject Thermal sensor es_ES
dc.subject Oxidation process es_ES
dc.subject.classification TECNOLOGIA ELECTRONICA es_ES
dc.subject.classification TEORIA DE LA SEÑAL Y COMUNICACIONES es_ES
dc.title Thermo-optic coefficient of porous silicon in the infrared region and oxidation process at low temperatures es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1149/2.0341906jes es_ES
dc.rights.accessRights Abierto es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica es_ES
dc.description.bibliographicCitation Martín-Sánchez, D.; Kovylina, M.; Ponce-Alcántara, S.; García-Rupérez, J. (2019). Thermo-optic coefficient of porous silicon in the infrared region and oxidation process at low temperatures. Journal of The Electrochemical Society. 166(6):B355-B359. https://doi.org/10.1149/2.0341906jes es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion https://doi.org/10.1149/2.0341906jes es_ES
dc.description.upvformatpinicio B355 es_ES
dc.description.upvformatpfin B359 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 166 es_ES
dc.description.issue 6 es_ES
dc.relation.pasarela S\381252 es_ES
dc.contributor.funder Ministerio de Economía y Competitividad es_ES


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