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Enhancing Pockels effect in strained silicon waveguides

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Enhancing Pockels effect in strained silicon waveguides

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Olivares-Sánchez-Mellado, I.; Parra Gómez, J.; Brimont, ACJ.; Sanchis Kilders, P. (2019). Enhancing Pockels effect in strained silicon waveguides. Optics Express. 27(19):26882-26892. https://doi.org/10.1364/OE.27.026882

Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/143330

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Title: Enhancing Pockels effect in strained silicon waveguides
Author: Olivares-Sánchez-Mellado, Irene Parra Gómez, Jorge Brimont, Antoine Christian Jacques Sanchis Kilders, Pablo
UPV Unit: Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica
Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions
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[EN] The magnitude and origin of the electro-optic measurements in strained silicon devices has been lately the object of a great controversy. Furthermore, recent works underline the importance of the masking effect of ...[+]
Subjects: Nonlinearity , Generation
Copyrigths: Reconocimiento - No comercial (by-nc)
Optics Express. (issn: 1094-4087 )
DOI: 10.1364/OE.27.026882
The Optical Society
Publisher version: https://doi.org/10.1364/OE.27.026882
Project ID:
Description: © 2019 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited"
Ministerio de Economía y Competitividad (MINECO/FEDER, UE) (TEC2016-76849); Universitat Politècnica de València (FPI-Irene Olivares); Ministerio de Educación, Cultura y Deporte (FPU17/04224); Generalitat Valenciana. Irene ...[+]
Type: Artículo

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