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Enhancing Pockels effect in strained silicon waveguides

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Enhancing Pockels effect in strained silicon waveguides

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dc.contributor.author Olivares-Sánchez-Mellado, Irene es_ES
dc.contributor.author Parra Gómez, Jorge es_ES
dc.contributor.author Brimont, Antoine Christian Jacques es_ES
dc.contributor.author Sanchis Kilders, Pablo es_ES
dc.date.accessioned 2020-05-15T03:03:26Z
dc.date.available 2020-05-15T03:03:26Z
dc.date.issued 2019-09-16 es_ES
dc.identifier.issn 1094-4087 es_ES
dc.identifier.uri http://hdl.handle.net/10251/143330
dc.description © 2019 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited" es_ES
dc.description.abstract [EN] The magnitude and origin of the electro-optic measurements in strained silicon devices has been lately the object of a great controversy. Furthermore, recent works underline the importance of the masking effect of free carriers in strained waveguides and the low interaction between the mode and the highly strained areas. In the present work, the use of a p-i-n junction and an asymmetric cladding is proposed to eliminate the unwanted carrier influence and improve the electro-optical modulation response. The proposed configuration enhances the effective refractive index due to the strain-induced Pockels effect in more than two orders of magnitude with respect to the usual configuration. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement es_ES
dc.description.sponsorship Ministerio de Economía y Competitividad (MINECO/FEDER, UE) (TEC2016-76849); Universitat Politècnica de València (FPI-Irene Olivares); Ministerio de Educación, Cultura y Deporte (FPU17/04224); Generalitat Valenciana. Irene Olivares and Jorge Parra acknowledges the Universitat Politècnica de València and Generalitat Valenciana, respectively, for funding their research staff training (FPI) grant. es_ES
dc.language Inglés es_ES
dc.publisher The Optical Society es_ES
dc.relation.ispartof Optics Express es_ES
dc.rights Reconocimiento - No comercial (by-nc) es_ES
dc.subject Nonlinearity es_ES
dc.subject Generation es_ES
dc.subject.classification TEORIA DE LA SEÑAL Y COMUNICACIONES es_ES
dc.title Enhancing Pockels effect in strained silicon waveguides es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1364/OE.27.026882 es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MINECO//TEC2016-76849-C2-2-R/ES/DESARROLLO DE OXIDOS METALICOS DE TRANSICION CON TECNOLOGIA DE SILICIO PARA APLICACIONES DE CONMUTACION E INTERCONEXION OPTICAS EFICIENTES Y RESPETUOSAS CON EL MEDIO AMBIENTE/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MECD//FPU17%2F04224/ es_ES
dc.rights.accessRights Abierto es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions es_ES
dc.description.bibliographicCitation Olivares-Sánchez-Mellado, I.; Parra Gómez, J.; Brimont, ACJ.; Sanchis Kilders, P. (2019). Enhancing Pockels effect in strained silicon waveguides. Optics Express. 27(19):26882-26892. https://doi.org/10.1364/OE.27.026882 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion https://doi.org/10.1364/OE.27.026882 es_ES
dc.description.upvformatpinicio 26882 es_ES
dc.description.upvformatpfin 26892 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 27 es_ES
dc.description.issue 19 es_ES
dc.relation.pasarela S\393570 es_ES
dc.contributor.funder Generalitat Valenciana es_ES
dc.contributor.funder Universitat Politècnica de València es_ES
dc.contributor.funder Ministerio de Economía y Competitividad es_ES
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