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Fault Modeling of Graphene Nanoribbon FET Logic Circuits

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Fault Modeling of Graphene Nanoribbon FET Logic Circuits

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Gil Tomás, DA.; Gracia-Morán, J.; Saiz-Adalid, L.; Gil, P. (2019). Fault Modeling of Graphene Nanoribbon FET Logic Circuits. Electronics. 8(8):1-18. https://doi.org/10.3390/electronics8080851

Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/144807

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Título: Fault Modeling of Graphene Nanoribbon FET Logic Circuits
Autor: Gil Tomás, Daniel Antonio Gracia-Morán, Joaquín Saiz-Adalid, Luis-J. Gil, Pedro
Entidad UPV: Universitat Politècnica de València. Departamento de Informática de Sistemas y Computadores - Departament d'Informàtica de Sistemes i Computadors
Fecha difusión:
Resumen:
[EN] Due to the increasing defect rates in highly scaled complementary metal-oxide-semiconductor (CMOS) devices, and the emergence of alternative nanotechnology devices, reliability challenges are of growing importance. ...[+]
Palabras clave: Emerging nanodevices , Graphene nanoribbon FET , Defects and variations , Fault models , Logic circuits
Derechos de uso: Reconocimiento (by)
Fuente:
Electronics. (eissn: 2079-9292 )
DOI: 10.3390/electronics8080851
Editorial:
MDPI AG
Versión del editor: https://doi.org/10.3390/electronics8080851
Código del Proyecto:
info:eu-repo/grantAgreement/UPV//200190032/
info:eu-repo/grantAgreement/UPV//PAID-06-18/
info:eu-repo/grantAgreement/MINECO//TIN2016-81075-R/ES/MECANISMOS DE ADAPTACION CONFIABLE PARA VEHICULOS AUTONOMOS Y CONECTADOS/
info:eu-repo/grantAgreement/UPV//SP20180334/
Agradecimientos:
This work was supported in part by the Spanish Government under the research project TIN2016-81075-R and by Primeros Proyectos de Investigacion (PAID-06-18), Vicerrectorado de Investigacion, Innovacion y Transferencia de ...[+]
Tipo: Artículo

References

International Technology Roadmap for Semiconductors (ITRS) 2013http://www.itrs2.net/2013-itrs.html

Schuegraf, K., Abraham, M. C., Brand, A., Naik, M., & Thakur, R. (2013). Semiconductor Logic Technology Innovation to Achieve Sub-10 nm Manufacturing. IEEE Journal of the Electron Devices Society, 1(3), 66-75. doi:10.1109/jeds.2013.2271582

International Technology Roadmap for Semiconductors (ITRS) 2015https://bit.ly/2xiiT8P [+]
International Technology Roadmap for Semiconductors (ITRS) 2013http://www.itrs2.net/2013-itrs.html

Schuegraf, K., Abraham, M. C., Brand, A., Naik, M., & Thakur, R. (2013). Semiconductor Logic Technology Innovation to Achieve Sub-10 nm Manufacturing. IEEE Journal of the Electron Devices Society, 1(3), 66-75. doi:10.1109/jeds.2013.2271582

International Technology Roadmap for Semiconductors (ITRS) 2015https://bit.ly/2xiiT8P

Novoselov, K. S. (2004). Electric Field Effect in Atomically Thin Carbon Films. Science, 306(5696), 666-669. doi:10.1126/science.1102896

Geim, A. K., & Novoselov, K. S. (2007). The rise of graphene. Nature Materials, 6(3), 183-191. doi:10.1038/nmat1849

Wu, Y., Farmer, D. B., Xia, F., & Avouris, P. (2013). Graphene Electronics: Materials, Devices, and Circuits. Proceedings of the IEEE, 101(7), 1620-1637. doi:10.1109/jproc.2013.2260311

Choudhury, M. R., Youngki Yoon, Jing Guo, & Mohanram, K. (2011). Graphene Nanoribbon FETs: Technology Exploration for Performance and Reliability. IEEE Transactions on Nanotechnology, 10(4), 727-736. doi:10.1109/tnano.2010.2073718

Avouris, P. (2010). Graphene: Electronic and Photonic Properties and Devices. Nano Letters, 10(11), 4285-4294. doi:10.1021/nl102824h

Banadaki, Y. M., & Srivastava, A. (2015). Scaling Effects on Static Metrics and Switching Attributes of Graphene Nanoribbon FET for Emerging Technology. IEEE Transactions on Emerging Topics in Computing, 3(4), 458-469. doi:10.1109/tetc.2015.2445104

Avouris, P., Chen, Z., & Perebeinos, V. (2007). Carbon-based electronics. Nature Nanotechnology, 2(10), 605-615. doi:10.1038/nnano.2007.300

Banerjee, S. K., Register, L. F., Tutuc, E., Basu, D., Kim, S., Reddy, D., & MacDonald, A. H. (2010). Graphene for CMOS and Beyond CMOS Applications. Proceedings of the IEEE, 98(12), 2032-2046. doi:10.1109/jproc.2010.2064151

Schwierz, F. (2013). Graphene Transistors: Status, Prospects, and Problems. Proceedings of the IEEE, 101(7), 1567-1584. doi:10.1109/jproc.2013.2257633

Fregonese, S., Magallo, M., Maneux, C., Happy, H., & Zimmer, T. (2013). Scalable Electrical Compact Modeling for Graphene FET Transistors. IEEE Transactions on Nanotechnology, 12(4), 539-546. doi:10.1109/tnano.2013.2257832

Chen, Y.-Y., Sangai, A., Rogachev, A., Gholipour, M., Iannaccone, G., Fiori, G., & Chen, D. (2015). A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process Variation. IEEE Transactions on Nanotechnology, 14(6), 1068-1082. doi:10.1109/tnano.2015.2469647

Ferrari, A. C., Bonaccorso, F., Fal’ko, V., Novoselov, K. S., Roche, S., Bøggild, P., … Pugno, N. (2015). Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems. Nanoscale, 7(11), 4598-4810. doi:10.1039/c4nr01600a

Hong, A. J., Song, E. B., Yu, H. S., Allen, M. J., Kim, J., Fowler, J. D., … Wang, K. L. (2011). Graphene Flash Memory. ACS Nano, 5(10), 7812-7817. doi:10.1021/nn201809k

Jeng, S.-L., Lu, J.-C., & Wang, K. (2007). A Review of Reliability Research on Nanotechnology. IEEE Transactions on Reliability, 56(3), 401-410. doi:10.1109/tr.2007.903188

Srinivasu, B., & Sridharan, K. (2017). A Transistor-Level Probabilistic Approach for Reliability Analysis of Arithmetic Circuits With Applications to Emerging Technologies. IEEE Transactions on Reliability, 66(2), 440-457. doi:10.1109/tr.2016.2642168

Teixeira Franco, D., Naviner, J.-F., & Naviner, L. (2006). Yield and reliability issues in nanoelectronic technologies. annals of telecommunications - annales des télécommunications, 61(11-12), 1422-1457. doi:10.1007/bf03219903

Lin, Y.-M., Jenkins, K. A., Valdes-Garcia, A., Small, J. P., Farmer, D. B., & Avouris, P. (2009). Operation of Graphene Transistors at Gigahertz Frequencies. Nano Letters, 9(1), 422-426. doi:10.1021/nl803316h

Liao, L., Lin, Y.-C., Bao, M., Cheng, R., Bai, J., Liu, Y., … Duan, X. (2010). High-speed graphene transistors with a self-aligned nanowire gate. Nature, 467(7313), 305-308. doi:10.1038/nature09405

Wang, X., Tabakman, S. M., & Dai, H. (2008). Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene. Journal of the American Chemical Society, 130(26), 8152-8153. doi:10.1021/ja8023059

Geim, A. K. (2009). Graphene: Status and Prospects. Science, 324(5934), 1530-1534. doi:10.1126/science.1158877

Mistewicz, K., Nowak, M., Wrzalik, R., Śleziona, J., Wieczorek, J., & Guiseppi-Elie, A. (2016). Ultrasonic processing of SbSI nanowires for their application to gas sensors. Ultrasonics, 69, 67-73. doi:10.1016/j.ultras.2016.04.004

Jesionek, M., Nowak, M., Mistewicz, K., Kępińska, M., Stróż, D., Bednarczyk, I., & Paszkiewicz, R. (2018). Sonochemical growth of nanomaterials in carbon nanotube. Ultrasonics, 83, 179-187. doi:10.1016/j.ultras.2017.03.014

Chen, X., Seo, D. H., Seo, S., Chung, H., & Wong, H.-S. P. (2012). Graphene Interconnect Lifetime: A Reliability Analysis. IEEE Electron Device Letters, 33(11), 1604-1606. doi:10.1109/led.2012.2211564

Wang, Z. F., Zheng, H., Shi, Q. W., & Chen, J. (2009). Emerging nanodevice paradigm. ACM Journal on Emerging Technologies in Computing Systems, 5(1), 1-19. doi:10.1145/1482613.1482616

Dong, J., Xiang, G., Xiang-Yang, K., & Jia-Ming, L. (2007). Atomistic Failure Mechanism of Single Wall Carbon Nanotubes with Small Diameters. Chinese Physics Letters, 24(1), 165-168. doi:10.1088/0256-307x/24/1/045

Bu, H., Chen, Y., Zou, M., Yi, H., Bi, K., & Ni, Z. (2009). Atomistic simulations of mechanical properties of graphene nanoribbons. Physics Letters A, 373(37), 3359-3362. doi:10.1016/j.physleta.2009.07.048

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