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Non-volatile epsilon-near-zero readout memory

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Non-volatile epsilon-near-zero readout memory

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dc.contributor.author Parra Gómez, Jorge es_ES
dc.contributor.author Olivares-Sánchez-Mellado, Irene es_ES
dc.contributor.author Brimont, Antoine Christian Jacques es_ES
dc.contributor.author Sanchis Kilders, Pablo es_ES
dc.date.accessioned 2020-12-17T04:33:25Z
dc.date.available 2020-12-17T04:33:25Z
dc.date.issued 2019-08-15 es_ES
dc.identifier.issn 0146-9592 es_ES
dc.identifier.uri http://hdl.handle.net/10251/157295
dc.description.abstract [EN] The lack of memory effect of silicon makes it unfeasible to store electronic data in photonics. Here we propose a nonvolatile readout photonic memory, which is electronically written/erased and optically read. The memory utilizes indium tin oxide as a floating gate and exploits its epsilon-near-zero regime and electro-optic activity. Extinction ratios greater than 10 dB in a bandwidth of 100 nm for a 5 mu m long memory are obtained. Furthermore, power consumption in the order of microwatts with retention times of about a decade have been predicted. The proposed structure opens a pathway for developing highly integrated electro-optic devices such as memory banks. (C) 2019 Optical Society of America. es_ES
dc.description.sponsorship The authors thank Alba Vicente for her valuable comments. Ministerio de Economia y Competitividad (MINECO) (TEC2016-76849, TEC2017-92037-EXP); Ministerio de Educacion, Cultura y Deporte (MECD) (FPU17/04224); Universitat Politecnica de Valencia (UPV) (FPI-Irene Olivares). es_ES
dc.language Inglés es_ES
dc.publisher The Optical Society es_ES
dc.relation.ispartof Optics Letters es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject Nanocavity modulator es_ES
dc.subject Ultra-Compact es_ES
dc.subject Wave-Guide es_ES
dc.subject Silicon es_ES
dc.subject.classification TEORIA DE LA SEÑAL Y COMUNICACIONES es_ES
dc.title Non-volatile epsilon-near-zero readout memory es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1364/OL.44.003932 es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MINECO//TEC2016-76849-C2-2-R/ES/DESARROLLO DE OXIDOS METALICOS DE TRANSICION CON TECNOLOGIA DE SILICIO PARA APLICACIONES DE CONMUTACION E INTERCONEXION OPTICAS EFICIENTES Y RESPETUOSAS CON EL MEDIO AMBIENTE/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/AEI//TEC2017-92037-EXP/ES/HACIA UN NUEVO PARADIGMA QUE PERMITA BIESTABILIDAD ELECTROOPTICA EN LA PLATAFORMA DE FOTONICA DE SILICIO/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MECD//FPU17%2F04224/ es_ES
dc.rights.accessRights Abierto es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica es_ES
dc.description.bibliographicCitation Parra Gómez, J.; Olivares-Sánchez-Mellado, I.; Brimont, ACJ.; Sanchis Kilders, P. (2019). Non-volatile epsilon-near-zero readout memory. Optics Letters. 44(16):3932-3935. https://doi.org/10.1364/OL.44.003932 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion https://doi.org/10.1364/OL.44.003932 es_ES
dc.description.upvformatpinicio 3932 es_ES
dc.description.upvformatpfin 3935 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 44 es_ES
dc.description.issue 16 es_ES
dc.identifier.pmid 31415515 es_ES
dc.relation.pasarela S\392151 es_ES
dc.contributor.funder Universitat Politècnica de València es_ES
dc.contributor.funder Ministerio de Economía y Competitividad es_ES
dc.contributor.funder Ministerio de Educación, Cultura y Deporte es_ES
dc.contributor.funder Agencia Estatal de Investigación es_ES
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