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Effect of the Front and Back Illumination on Sub-Terahertz Detection Using n-Channel Strained-Silicon MODFETs

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Effect of the Front and Back Illumination on Sub-Terahertz Detection Using n-Channel Strained-Silicon MODFETs

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Delgado-Notario, JA.; Calvo-Gallego, J.; Velázquez-Pérez, JE.; Ferrando Bataller, M.; Fobelets, K.; Meziani, YM. (2020). Effect of the Front and Back Illumination on Sub-Terahertz Detection Using n-Channel Strained-Silicon MODFETs. Applied Sciences. 10(17):1-9. https://doi.org/10.3390/app10175959

Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/165958

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Metadatos del ítem

Título: Effect of the Front and Back Illumination on Sub-Terahertz Detection Using n-Channel Strained-Silicon MODFETs
Autor: Delgado-Notario, Juan A. Calvo-Gallego, Jaime Velázquez-Pérez, Jesús E. Ferrando Bataller, Miguel Fobelets, Kristel Meziani, Yahya M.
Entidad UPV: Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions
Fecha difusión:
Resumen:
[EN] Plasma waves in semiconductor gated 2-D systems can be used to efficiently detect Terahertz (THz) electromagnetic radiation. This work reports on the response of a strained-Si Modulation-doped Field-Effect Transistor ...[+]
Palabras clave: Terahertz , SiGe , MODFET , Silicon , Electromagnetic simulation
Derechos de uso: Reconocimiento (by)
Fuente:
Applied Sciences. (eissn: 2076-3417 )
DOI: 10.3390/app10175959
Editorial:
MDPI AG
Versión del editor: https://doi.org/10.3390/app10175959
Código del Proyecto:
info:eu-repo/grantAgreement/MINECO//TEC2016-78028-C3-3-P/ES/DISEÑO DE ANTENAS MULTIHAZ DE ALTA GANANCIA PARA LOS SISTEMAS DE COMUNICACIONES DE NUEVA GENERACION/
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/RTI2018-097180-B-I00/ES/NUEVA GENERACION DE TRANSISTORES FET PARA TECNOLOGIA DE THZ/
info:eu-repo/grantAgreement/Junta de Castilla y León//SA256P18/ES/TECNOLOGÍAS BASADAS EN MATERIALES HÍBRIDOS AVANZADOS: GRAFENO, MATERIALES 2D Y AISLANTES TOPOLÓGICOS/
info:eu-repo/grantAgreement/GVA//AICO%2F2019%2F018/
Agradecimientos:
This research was funded by the Ministerio de Ciencia, Investigacion y Universidades of Spain andFEDER (ERDF: European Regional Development Fund) under the Research Grants numbers RTI2018-097180-B-100 and TEC2016-78028-C3-3-P ...[+]
Tipo: Artículo

References

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