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Gómez-Hernández, VJ.; Santos, AJ.; Blanco, E.; Lacroix, B.; García, R.; Huffaker, DL.; Morales, FM. (2019). Porosity Control for Plasma-Assisted Molecular Beam Epitaxy of GaN Nanowires. Crystal Growth & Design. 19(4):2461-2469. https://doi.org/10.1021/acs.cgd.9b00146
Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/202496
Título: | Porosity Control for Plasma-Assisted Molecular Beam Epitaxy of GaN Nanowires | |
Autor: | Santos, Antonio J. Blanco, Eduardo Lacroix, Bertrand García, Rafael Huffaker, Diana L. Morales, Francisco M. | |
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[EN] We report on the bottom-up fabrication, by plasma-assisted molecular beam epitaxy, of monocrystalline GaN solid, hollow, and c-shape nanowires deposited in a compact fashion. The shape exhibited by these nanostructures ...[+]
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Derechos de uso: | Reserva de todos los derechos | |
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Versión del editor: | https://doi.org/10.1021/acs.cgd.9b00146 | |
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The authors would like to acknowledge the financial support provided by Ser Cymru National Research Network in Advanced Engineering and Materials. V.J.G. acknowledge Dr. P. Caroff and Dr. M. Kesaria for fruitful discussions. ...[+]
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