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High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds

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High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds

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Gomis Hilario, O.; Vilaplana Cerda, RI.; Manjón Herrera, FJ.; Pérez-González, E.; López-Solano, J.; Rodríguez-Hernández, P.; Muñoz, A.... (2012). High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds. Journal of Applied Physics. 111(1):135181-1351815. https://doi.org/10.1063/1.3675162

Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/35867

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Title: High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds
Author: Gomis Hilario, Oscar Vilaplana Cerda, Rosario Isabel Manjón Herrera, Francisco Javier Pérez-González, E. López-Solano, Javier Rodríguez-Hernández, P. Muñoz, Alfonso Errandonea, Daniel Ruiz Fuertes, Javier Segura Garcia del Rio, Alfredo Santamaría Pérez, David Tiginyanu, Ivan Ursaki, Veacheslav
UPV Unit: Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada
Universitat Politècnica de València. Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica - Centre de Tecnologies Físiques: Acústica, Materials i Astrofísica
Universitat Politècnica de València. Instituto de Diseño para la Fabricación y Producción Automatizada - Institut de Disseny per a la Fabricació i Producció Automatitzada
Issued date:
Abstract:
High-pressure optical absorption and Raman scattering measurements have been performed in defect chalcopyrite (DC) CdGa2Se4 up to 22 GPa during two pressure cycles to investigate the pressure-induced order-disorder phase ...[+]
Subjects: high pressure , band gap , phase transitions , raman spectra , optical absorption , zinc , x-ray diffraction , photonic bandgap materials , vacancies , Raman scattering
Copyrigths: Reserva de todos los derechos
Source:
Journal of Applied Physics. (issn: 0021-8979 ) (eissn: 1089-7550 )
DOI: 10.1063/1.3675162
Publisher:
American Institute of Physics (AIP)
Publisher version: http://dx.doi.org/10.1063/1.3675162
Project ID:
info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-04/ES/CRECIMIENTO Y CARACTERIZACION DE NANOESTRUCTURAS DE OXIDOS METALICOS BAJO ALTAS PRESIONES/
...[+]
info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-04/ES/CRECIMIENTO Y CARACTERIZACION DE NANOESTRUCTURAS DE OXIDOS METALICOS BAJO ALTAS PRESIONES/
info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-03/ES/MATERIALES, NANOMATERIALES Y AGREGRADOS BAJO CONDICIONES EXTREMAS. PROPIEDADES ELECTRONICAS Y DINAMICAS DESDE METODOS AB INITIO/
info:eu-repo/grantAgreement/GVA//GV06%2F151/
info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-01/ES/SINTESIS Y CARACTERIZACION OPTICA, ELECTRONICA, ESTRUCTURAL Y VIBRACIONAL DE NUEVOS MATERIALES BAJO CONDICIONES EXTREMAS DE PRESION Y TEMPERATURA/
info:eu-repo/grantAgreement/MEC//CSD2007-00045/ES/MATERIA A ALTA PRESION/
info:eu-repo/grantAgreement/UPV//20121469/
info:eu-repo/grantAgreement/MICINN//CTQ2009-14596-C02-01/ES/Compresibilidad de Materiales/
info:eu-repo/grantAgreement/Gobierno de la Comunidad de Madrid//S2009%2FPPQ-1551/ES/Química a alta presión/
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Thanks:
This study was supported by the Spanish government MICINN under Grant No. MAT2010-21270-C04-01/03/04; by the Generalitat Valenciana (Project No. GV06/151), by MALTA Consolider Ingenio 2010 project (CSD2007-00045), by the ...[+]
Type: Artículo

References

A. MacKinnon, in Tables of Numerical Data and Functional Relationships in Science and Technology, edited by O. Madelung, M. Schulz, and H. Weiss (Springer-Verlag, Berlin, 1985), Vol. 17, p. 124.

Bernard, J. E., & Zunger, A. (1988). Ordered-vacancy-compound semiconductors: PseudocubicCdIn2Se4. Physical Review B, 37(12), 6835-6856. doi:10.1103/physrevb.37.6835

Jiang, X., & Lambrecht, W. R. L. (2004). Electronic band structure of ordered vacancy defect chalcopyrite compounds with formulaII−III2−VI4. Physical Review B, 69(3). doi:10.1103/physrevb.69.035201 [+]
A. MacKinnon, in Tables of Numerical Data and Functional Relationships in Science and Technology, edited by O. Madelung, M. Schulz, and H. Weiss (Springer-Verlag, Berlin, 1985), Vol. 17, p. 124.

Bernard, J. E., & Zunger, A. (1988). Ordered-vacancy-compound semiconductors: PseudocubicCdIn2Se4. Physical Review B, 37(12), 6835-6856. doi:10.1103/physrevb.37.6835

Jiang, X., & Lambrecht, W. R. L. (2004). Electronic band structure of ordered vacancy defect chalcopyrite compounds with formulaII−III2−VI4. Physical Review B, 69(3). doi:10.1103/physrevb.69.035201

Zunger, A., Wagner, S., & Petroff, P. M. (1993). New materials and structures for photovoltaics. Journal of Electronic Materials, 22(1), 3-16. doi:10.1007/bf02665719

Morón, M. C., & Hull, S. (2003). Order-disorder phase transition inZn1−xMnxGa2Se4: Long-range order parameter versusx. Physical Review B, 67(12). doi:10.1103/physrevb.67.125208

Joshi, N. V., Luengo, J., & Vera, F. (2007). Optical activity in []ZnGa2S4. Materials Letters, 61(8-9), 1926-1928. doi:10.1016/j.matlet.2006.07.177

Krämer, V., Siebert, D., & Febbraro, S. (1984). Structure refinement of cadmium gallium selenide CdGa2Se4. Zeitschrift für Kristallographie, 169(1-4), 283-287. doi:10.1524/zkri.1984.169.1-4.283

Gastaldi, L., Simeone, M. G., & Viticoli, S. (1985). Cation ordering and crystal structures in AGa2X4 compounds (CoGa2S4, CdGa2S4, CdGa2Se4, HgGa2Se4, HgGa2Te4). Solid State Communications, 55(7), 605-607. doi:10.1016/0038-1098(85)90821-x

Ursaki, V. V., Burlakov, I. I., Tiginyanu, I. M., Raptis, Y. S., Anastassakis, E., & Anedda, A. (1999). Phase transitions in defect chalcopyrite compounds under hydrostatic pressure. Physical Review B, 59(1), 257-268. doi:10.1103/physrevb.59.257

Mitani, T., Naitou, T., Matsuishi, K., Onari, S., Allakhverdiev, K., Gashimzade, F., & Kerimova, T. (2003). Raman scattering in CdGa2Se4 under pressure. physica status solidi (b), 235(2), 321-325. doi:10.1002/pssb.200301579

Fuentes-Cabrera, M. (2001). Ab initiostudy of the vibrational and electronic properties of CdGa2S4and CdGa2Se4under pressure. Journal of Physics: Condensed Matter, 13(45), 10117-10124. doi:10.1088/0953-8984/13/45/301

Fuentes-Cabrera, M., & Sankey, O. F. (2001). Theoretical study of the ordered-vacancy semiconducting compound CdAl2Se4. Journal of Physics: Condensed Matter, 13(8), 1669-1684. doi:10.1088/0953-8984/13/8/305

Grzechnik, A., Ursaki, V. V., Syassen, K., Loa, I., Tiginyanu, I. M., & Hanfland, M. (2001). Pressure-Induced Phase Transitions in Cadmium Thiogallate CdGa2Se4. Journal of Solid State Chemistry, 160(1), 205-211. doi:10.1006/jssc.2001.9224

Manjón, F. J., Gomis, O., Rodríguez-Hernández, P., Pérez-González, E., Muñoz, A., Errandonea, D., … Ursaki, V. V. (2010). Nonlinear pressure dependence of the direct band gap in adamantine ordered-vacancy compounds. Physical Review B, 81(19). doi:10.1103/physrevb.81.195201

Eifler, A., Hecht, J.-D., Lippold, G., Riede, V., Grill, W., Krauß, G., & Krämer, V. (1999). Combined infrared and Raman study of the optical phonons of defect chalcopyrite single crystals. Physica B: Condensed Matter, 263-264, 806-808. doi:10.1016/s0921-4526(98)01292-7

Eifler, A., Krauss, G., Riede, V., Krämer, V., & Grill, W. (2005). Optical phonon modes and structure of ZnGa2Se4 and ZnGa2S4. Journal of Physics and Chemistry of Solids, 66(11), 2052-2057. doi:10.1016/j.jpcs.2005.09.049

Burlakov, I. I., Raptis, Y., Ursaki, V. V., Anastassakis, E., & Tiginyanu, I. M. (1997). Order-disorder phase transition in CdAl2S4 under hydrostatic pressure. Solid State Communications, 101(5), 377-381. doi:10.1016/s0038-1098(96)00602-3

Meenakshi, S., Vijyakumar, V., Godwal, B. K., Eifler, A., Orgzall, I., Tkachev, S., & Hochheimer, H. D. (2006). High pressure X-ray diffraction study of CdAl2Se4 and Raman study of AAl2Se4 (A=Hg, Zn) and CdAl2X4 (X=Se, S). Journal of Physics and Chemistry of Solids, 67(8), 1660-1667. doi:10.1016/j.jpcs.2006.02.015

Errandonea, D., Kumar, R. S., Manjón, F. J., Ursaki, V. V., & Tiginyanu, I. M. (2008). High-pressure x-ray diffraction study on the structure and phase transitions of the defect-stannite ZnGa2Se4 and defect-chalcopyrite CdGa2S4. Journal of Applied Physics, 104(6), 063524. doi:10.1063/1.2981089

Mao, H. K., Xu, J., & Bell, P. M. (1986). Calibration of the ruby pressure gauge to 800 kbar under quasi-hydrostatic conditions. Journal of Geophysical Research, 91(B5), 4673. doi:10.1029/jb091ib05p04673

Letoullec, R., Pinceaux, J. P., & Loubeyre, P. (1988). The membrane diamond anvil cell: A new device for generating continuous pressure and temperature variations. High Pressure Research, 1(1), 77-90. doi:10.1080/08957958808202482

Mujica, A., Rubio, A., Muñoz, A., & Needs, R. J. (2003). High-pressure phases of group-IV, III–V, and II–VI compounds. Reviews of Modern Physics, 75(3), 863-912. doi:10.1103/revmodphys.75.863

Tiginyanu, I. M., Lottici, P. P., Razzetti, C., & Gennari, S. (1993). Effects of the Cations on the Raman Spectra of Sulphur Defect Chalcopyrites. Japanese Journal of Applied Physics, 32(S3), 561. doi:10.7567/jjaps.32s3.561

Razzetti, C., & Lottici, P. P. (1993). Raman Scattering in Defective AIIB2IIIX4VICompounds and Alloys. Japanese Journal of Applied Physics, 32(S3), 431. doi:10.7567/jjaps.32s3.431

Allakhverdiev, K., Gashimzade, F., Kerimova, T., Mitani, T., Naitou, T., Matsuishi, K., & Onari, S. (2003). Raman scattering under pressure in ZnGa2Se4. Journal of Physics and Chemistry of Solids, 64(9-10), 1597-1601. doi:10.1016/s0022-3697(03)00077-5

Lottici, P. P., & Razzetti, C. (1983). A comparison of the raman spectra of ZnGa2Se4 and other gallium defect chalcopyrites. Solid State Communications, 46(9), 681-684. doi:10.1016/0038-1098(83)90506-9

Wei, S.-H., Zhang, S. B., & Zunger, A. (1999). Band structure and stability of zinc-blende-based semiconductor polytypes. Physical Review B, 59(4), R2478-R2481. doi:10.1103/physrevb.59.r2478

Garbato, L., Ledda, F., & Rucci, A. (1987). Structural distortions and polymorphic behaviour in ABC2 and AB2C4 tetrahedral compounds. Progress in Crystal Growth and Characterization, 15(1), 1-41. doi:10.1016/0146-3535(87)90008-6

Besson, J. M., Itié, J. P., Polian, A., Weill, G., Mansot, J. L., & Gonzalez, J. (1991). High-pressure phase transition and phase diagram of gallium arsenide. Physical Review B, 44(9), 4214-4234. doi:10.1103/physrevb.44.4214

Nakajima, A., Yoshihara, A., & Ishigame, M. (1994). Defect-induced Raman spectra in dopedCeO2. Physical Review B, 50(18), 13297-13307. doi:10.1103/physrevb.50.13297

Li, H. D., Zhang, S. L., Yang, H. B., Zou, G. T., Yang, Y. Y., Yue, K. T., … Yan, Y. (2002). Raman spectroscopy of nanocrystalline GaN synthesized by arc plasma. Journal of Applied Physics, 91(7), 4562-4567. doi:10.1063/1.1452762

Manjón, F. J., Marí, B., Serrano, J., & Romero, A. H. (2005). Silent Raman modes in zinc oxide and related nitrides. Journal of Applied Physics, 97(5), 053516. doi:10.1063/1.1856222

Manjón, F. J., Errandonea, D., Segura, A., Chervin, J. C., & Muñoz, V. (2002). Precursor effects of the Rhombohedral-to-Cubic Phase Transition in Indium Selenide. High Pressure Research, 22(2), 261-266. doi:10.1080/08957950212819

Bilz, H., & Kress, W. (1979). Phonon Dispersion Relations in Insulators. Springer Series in Solid-State Sciences. doi:10.1007/978-3-642-81347-4

Meenakshi, S., Vijayakumar, V., Eifler, A., & Hochheimer, H. D. (2010). Pressure-induced phase transition in defect Chalcopyrites HgAl2Se4 and CdAl2S4. Journal of Physics and Chemistry of Solids, 71(5), 832-835. doi:10.1016/j.jpcs.2010.02.007

Talwar, D. N., Vandevyver, M., Kunc, K., & Zigone, M. (1981). Lattice dynamics of zinc chalcogenides under compression: Phonon dispersion, mode Grüneisen, and thermal expansion. Physical Review B, 24(2), 741-753. doi:10.1103/physrevb.24.741

Koval, L. S., Markus, M. M., Radautsan, S. I., Sobolev, V. V., & Stanchu, A. V. (1972). Optical properties of the two modifications of CdIn2Se4. Physica Status Solidi (a), 9(1), K69-K72. doi:10.1002/pssa.2210090164

(1996). physica status solidi (b), 198(1). doi:10.1002/pssb.v198:1

Edwards, A. L., & Drickamer, H. G. (1961). Effect of Pressure on the Absorption Edges of Some III-V, II-VI, and I-VII Compounds. Physical Review, 122(4), 1149-1157. doi:10.1103/physrev.122.1149

Wei, S.-H., & Zunger, A. (1999). Predicted band-gap pressure coefficients of all diamond and zinc-blende semiconductors: Chemical trends. Physical Review B, 60(8), 5404-5411. doi:10.1103/physrevb.60.5404

GonzáLez, J., Power, C., Chervin, J. C., Hamel, G., & Snoeck, E. (2002). Nanocrystals of CdSe Formed by the Pressure Cycle Method. High Pressure Research, 22(2), 271-275. doi:10.1080/08957950212811

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