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dc.contributor.author | Canet-Ferrer, J. | es_ES |
dc.contributor.author | Muñoz Matutano, Guillermo | es_ES |
dc.contributor.author | Herranz, J. | es_ES |
dc.contributor.author | Rivas, D. | es_ES |
dc.contributor.author | Alén, B. | es_ES |
dc.contributor.author | González, Y. | es_ES |
dc.contributor.author | Fuster, D. | es_ES |
dc.contributor.author | González, L. | es_ES |
dc.contributor.author | Martínez-Pastor, J. | es_ES |
dc.date.accessioned | 2014-09-30T08:34:07Z | |
dc.date.available | 2014-09-30T08:34:07Z | |
dc.date.issued | 2013-10 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | http://hdl.handle.net/10251/40431 | |
dc.description.abstract | [EN] We have studied the optical properties of InAs site-controlled quantum dots (SCQDs) grown on pre-patterned GaAs substrates. Since InAs nucleates preferentially on the lithography motifs, the location of the resulting QDs is determined by the pattern, which is fabricated by local oxidation nanolithography. Optical characterization has been performed on such SCQDs to study the fundamental and excited states. At the ground state different exciton complex transitions of about 500 μeV linewidth have been identified and the fine structure splitting of the neutral exciton has been determined (≈65 μeV). The observed electronic structure covers the demands of future quantum information technologies | es_ES |
dc.description.sponsorship | The authors want to acknowledge the financial support from Spanish government through grants QD-NANOTICS: TEC2011-29120-C05-01, EPIC-NANOTICS: TEC2011-29120-C05-04, PROMESA: ENE2012-37804-C02-02, and Q&C Light: S2009ESP-1503. We also thank the support from the PROMETEO2009/74 project (Generalitat Valenciana). J.C.-F. thanks the Spanish MCI for his FPI grant (No. BES-2006-12300) and J.H. acknowledges to the JAE program for the funds. | |
dc.language | Inglés | es_ES |
dc.publisher | American Institute of Physics (AIP) | es_ES |
dc.relation.ispartof | Applied Physics Letters | es_ES |
dc.rights | Reserva de todos los derechos | es_ES |
dc.subject | Close proximity | es_ES |
dc.subject | Emission | es_ES |
dc.subject | Surfaces | es_ES |
dc.subject | Photons | es_ES |
dc.subject | State | es_ES |
dc.title | Exciton and multiexciton optical properties of single InAs/GaAs site-controlled quantum dots | es_ES |
dc.type | Artículo | es_ES |
dc.identifier.doi | 10.1063/1.4828352 | |
dc.relation.projectID | info:eu-repo/grantAgreement/MICINN//TEC2011-29120-C05-01/ES/PUNTOS CUANTICOS SEMICONDUCTORES COMO CLAVE PARA FUTURAS TECNOLOGIAS: DE LA NANOFOTONICA A LA NANOPLASMONICA/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/MICINN//TEC2011-29120-C05-04/ES/TECNOLOGIAS CLAVE PARA NANOFOTONICA Y NANOPLASMONICA BASADAS EN NANOESTRUCTURAS CUANTICAS EPITAXIALES/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/MINECO//ENE2012-37804-C02-02/ES/APLICACION DE ESTRUCTURAS CUANTICAS Y OTROS NUEVOS CONCEPTOS A LA MEJORA DE LA EFICIENCIA DE LAS CELULAS SOLARES, SUBPROYECTO 2/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/CAM//S2009%2FESP-1503/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/GVA//PROMETEO09%2F2009%2F074/ES/Nanotecnología y Nanomateriales para la Conversión Solar Fotovoltaica/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/MEC//BES-2006-12300/ES/BES-2006-12300/ | es_ES |
dc.rights.accessRights | Abierto | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Instituto Universitario de Telecomunicación y Aplicaciones Multimedia - Institut Universitari de Telecomunicacions i Aplicacions Multimèdia | es_ES |
dc.description.bibliographicCitation | Canet-Ferrer, J.; Muñoz Matutano, G.; Herranz, J.; Rivas, D.; Alén, B.; González, Y.; Fuster, D.... (2013). Exciton and multiexciton optical properties of single InAs/GaAs site-controlled quantum dots. Applied Physics Letters. 103(18). https://doi.org/10.1063/1.4828352 | es_ES |
dc.description.accrualMethod | S | es_ES |
dc.relation.publisherversion | http://dx.doi.org/10.1063/1.4828352 | es_ES |
dc.type.version | info:eu-repo/semantics/publishedVersion | es_ES |
dc.description.volume | 103 | es_ES |
dc.description.issue | 18 | es_ES |
dc.relation.senia | 255063 | |
dc.contributor.funder | Ministerio de Ciencia e Innovación | |
dc.contributor.funder | Comunidad de Madrid | |
dc.contributor.funder | Generalitat Valenciana | |
dc.contributor.funder | Ministerio de Educación y Ciencia | es_ES |
dc.contributor.funder | Ministerio de Economía y Competitividad | es_ES |