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Effective electrochemical n-type doping of ZnO thin films for optoelectronic window applications

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Effective electrochemical n-type doping of ZnO thin films for optoelectronic window applications

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dc.contributor.author Cembrero Coca, Paula es_ES
dc.contributor.author Mollar García, Miguel Alfonso es_ES
dc.contributor.author Singh, K.C. es_ES
dc.contributor.author Marí Soucase, Bernabé es_ES
dc.date.accessioned 2014-11-18T12:04:40Z
dc.date.available 2014-11-18T12:04:40Z
dc.date.issued 2013-05
dc.identifier.issn 1432-8488
dc.identifier.uri http://hdl.handle.net/10251/44374
dc.description.abstract [EN] An effective n-type doping of ZnO thin films electrochemically synthetized was achieved by varying the chloride ion concentration in the starting electrolyte. The ratio between chloride and zinc cations was varied between 0 and 2 while the zinc concentration in the solution was kept constant. When the concentration of chloride in the bath increases an effective n-type doping of ZnO films takes place. n-type doping is evidenced by the rise of donors concentration, obtained from Mott-Schottky measurements, as well as from the blueshift observed in the optical gap owing to the Burstein-Moss effect. es_ES
dc.description.sponsorship This work was supported by Spanish Government through MCINN grant MAT2009-14625-C03-03 and European Commission through NanoCIS project FP7-PEOPLE-2010-IRSES (ref. 269279). en_EN
dc.language Inglés es_ES
dc.publisher Springer Verlag (Germany) es_ES
dc.relation info:eu-repo/grantAgreement/MICINN//MAT2009-14625-C03-03/ES/Diseño, Sintesis Y Caracterizacion De Materiales Fotovoltaicos Avanzados De Alta Eficiencia/ es_ES
dc.relation.ispartof Journal of Solid State Electrochemistry es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject ZnO es_ES
dc.subject Electrodeposition es_ES
dc.subject Doping es_ES
dc.subject.classification FISICA APLICADA es_ES
dc.title Effective electrochemical n-type doping of ZnO thin films for optoelectronic window applications es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1149/2.023307jss
dc.relation.projectID info:eu-repo/grantAgreement/EC/FP7/269279/EU/Development of a new generation of CIGS-based solar cells/
dc.rights.accessRights Abierto es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto de Diseño para la Fabricación y Producción Automatizada - Institut de Disseny per a la Fabricació i Producció Automatitzada es_ES
dc.description.bibliographicCitation Cembrero Coca, P.; Mollar García, MA.; Singh, K.; Marí Soucase, B. (2013). Effective electrochemical n-type doping of ZnO thin films for optoelectronic window applications. Journal of Solid State Electrochemistry. 2(7):Q108-Q112. https://doi.org/10.1149/2.023307jss es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http://dx.doi.org/10.1149/2.023307jss es_ES
dc.description.upvformatpinicio Q108 es_ES
dc.description.upvformatpfin Q112 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 2 es_ES
dc.description.issue 7 es_ES
dc.relation.senia 253338
dc.contributor.funder Ministerio de Ciencia e Innovación
dc.contributor.funder European Commission
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