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Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates

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Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates

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dc.contributor.author Sarti, F. es_ES
dc.contributor.author Muñoz Matutano, Guillermo es_ES
dc.contributor.author Bauer, D. es_ES
dc.contributor.author Dotti, N. es_ES
dc.contributor.author Bietti, S. es_ES
dc.contributor.author Isella, G. es_ES
dc.contributor.author Vinattieri, A. es_ES
dc.contributor.author Sanguinetti, S. es_ES
dc.contributor.author Gurioli, M. es_ES
dc.date.accessioned 2014-11-24T13:10:35Z
dc.date.available 2014-11-24T13:10:35Z
dc.date.issued 2013-12-14
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10251/44639
dc.description.abstract The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexes. Our findings demonstrate the prospect of exploiting extrinsic centers for generating entangled photon pairs on a Si based device. es_ES
dc.language Inglés es_ES
dc.publisher American Institute of Physics (AIP) es_ES
dc.relation.ispartof Journal of Applied Physics es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject Single photons es_ES
dc.subject Quantum dots es_ES
dc.subject Semiconductor es_ES
dc.title Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1063/1.4844375
dc.rights.accessRights Abierto es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions es_ES
dc.description.bibliographicCitation Sarti, F.; Muñoz Matutano, G.; Bauer, D.; Dotti, N.; Bietti, S.; Isella, G.; Vinattieri, A.... (2013). Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates. Journal of Applied Physics. 114(22):2243141-2243143. doi:10.1063/1.4844375 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http://dx.doi.org/10.1063/1.4844375 es_ES
dc.description.upvformatpinicio 2243141 es_ES
dc.description.upvformatpfin 2243143 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 114 es_ES
dc.description.issue 22 es_ES
dc.relation.senia 266120
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