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Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates

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Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates

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Sarti, F.; Muñoz Matutano, G.; Bauer, D.; Dotti, N.; Bietti, S.; Isella, G.; Vinattieri, A.... (2013). Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates. Journal of Applied Physics. 114(22):2243141-2243143. doi:10.1063/1.4844375

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Título: Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates
Autor: Sarti, F. Muñoz Matutano, Guillermo Bauer, D. Dotti, N. Bietti, S. Isella, G. Vinattieri, A. Sanguinetti, S. Gurioli, M.
Entidad UPV: Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions
Fecha difusión:
Resumen:
The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the ...[+]
Palabras clave: Single photons , Quantum dots , Semiconductor
Derechos de uso: Reserva de todos los derechos
Fuente:
Journal of Applied Physics. (issn: 0021-8979 )
DOI: 10.1063/1.4844375
Editorial:
American Institute of Physics (AIP)
Versión del editor: http://dx.doi.org/10.1063/1.4844375
Tipo: Artículo

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