- -

Optical characterization of individual GaAs quantum dots grown with height control technique

RiuNet: Repositorio Institucional de la Universidad Politécnica de Valencia

Compartir/Enviar a

Citas

Estadísticas

  • Estadisticas de Uso

Optical characterization of individual GaAs quantum dots grown with height control technique

Mostrar el registro sencillo del ítem

Ficheros en el ítem

dc.contributor.author Sarti, F. es_ES
dc.contributor.author Muñoz Matutano, Guillermo es_ES
dc.contributor.author Bietti, S. es_ES
dc.contributor.author Vinattieri, A. es_ES
dc.contributor.author Sanguinetti, S. es_ES
dc.contributor.author Gurioli, M. es_ES
dc.date.accessioned 2014-11-25T08:56:08Z
dc.date.available 2014-11-25T08:56:08Z
dc.date.issued 2013-09-28
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10251/44778
dc.description.abstract We show that the epitaxial growth of height-controlled GaAs quantum dots, leading to the reduction of the inhomogeneous emission bandwidth, produces individual nanostructures of peculiar morphology. Besides the height controlled quantum dots, we observe nanodisks formation. Exploiting time resolved and spatially resolved photoluminescence we establish the decoupling between quantum dots and nanodisks and demonstrate the high optical properties of the individual quantum dots, despite the processing steps needed for height control. es_ES
dc.language Inglés es_ES
dc.publisher American Institute of Physics (AIP) es_ES
dc.relation.ispartof Journal of Applied Physics es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject Epitaxy es_ES
dc.subject.classification FISICA APLICADA es_ES
dc.title Optical characterization of individual GaAs quantum dots grown with height control technique es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1063/1.4821901
dc.rights.accessRights Abierto es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions es_ES
dc.description.bibliographicCitation Sarti, F.; Muñoz Matutano, G.; Bietti, S.; Vinattieri, A.; Sanguinetti, S.; Gurioli, M. (2013). Optical characterization of individual GaAs quantum dots grown with height control technique. Journal of Applied Physics. 114(2):1243011-1243014. doi:10.1063/1.4821901 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http://dx.doi.org/10.1063/1.4821901 es_ES
dc.description.upvformatpinicio 1243011 es_ES
dc.description.upvformatpfin 1243014 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 114 es_ES
dc.description.issue 2 es_ES
dc.relation.senia 255068
dc.description.references Shields, A. J. (2007). Semiconductor quantum light sources. Nature Photonics, 1(4), 215-223. doi:10.1038/nphoton.2007.46 es_ES
dc.description.references Koguchi, N. (1993). New selective molecular-beam epitaxial growth method for direct formation of GaAs quantum dots. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 11(3), 787. doi:10.1116/1.586789 es_ES
dc.description.references Watanabe, K., Koguchi, N., & Gotoh, Y. (2000). Fabrication of GaAs Quantum Dots by Modified Droplet Epitaxy. Japanese Journal of Applied Physics, 39(Part 2, No. 2A), L79-L81. doi:10.1143/jjap.39.l79 es_ES
dc.description.references Sanguinetti, S., & Koguchi, N. (2013). Droplet epitaxy of nanostructures. Molecular Beam Epitaxy, 95-111. doi:10.1016/b978-0-12-387839-7.00004-x es_ES
dc.description.references Keizer, J. G., Bocquel, J., Koenraad, P. M., Mano, T., Noda, T., & Sakoda, K. (2010). Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy. Applied Physics Letters, 96(6), 062101. doi:10.1063/1.3303979 es_ES
dc.description.references (s. f.). doi:10.1021/nl048192 es_ES
dc.description.references Lee, J. H., Wang, Z. M., Abuwaar, Z. Y., Strom, N. W., & Salamo, G. J. (2006). Evolution between self-assembled single and double ring-like nanostructures. Nanotechnology, 17(15), 3973-3976. doi:10.1088/0957-4484/17/15/061 es_ES
dc.description.references Somaschini, C., Bietti, S., Koguchi, N., & Sanguinetti, S. (2011). Coupled quantum dot–ring structures by droplet epitaxy. Nanotechnology, 22(18), 185602. doi:10.1088/0957-4484/22/18/185602 es_ES
dc.description.references Somaschini, C., Bietti, S., Koguchi, N., & Sanguinetti, S. (2009). Fabrication of Multiple Concentric Nanoring Structures. Nano Letters, 9(10), 3419-3424. doi:10.1021/nl901493f es_ES
dc.description.references Reyes, K., Smereka, P., Nothern, D., Millunchick, J. M., Bietti, S., Somaschini, C., … Frigeri, C. (2013). Unified model of droplet epitaxy for compound semiconductor nanostructures: Experiments and theory. Physical Review B, 87(16). doi:10.1103/physrevb.87.165406 es_ES
dc.description.references Bietti, S., Somaschini, C., & Sanguinetti, S. (2013). Crystallization kinetics of Ga metallic nano-droplets under As flux. Nanotechnology, 24(20), 205603. doi:10.1088/0957-4484/24/20/205603 es_ES
dc.description.references Jo, M., Mano, T., & Sakoda, K. (2010). Morphological control of GaAs quantum dots grown by droplet epitaxy using a thin AlGaAs capping layer. Journal of Applied Physics, 108(8), 083505. doi:10.1063/1.3493262 es_ES
dc.description.references Ohtake, A. (2008). Surface reconstructions on GaAs(001). Surface Science Reports, 63(7), 295-327. doi:10.1016/j.surfrep.2008.03.001 es_ES
dc.description.references Mano, T., Abbarchi, M., Kuroda, T., Mastrandrea, C. A., Vinattieri, A., Sanguinetti, S., … Gurioli, M. (2009). Ultra-narrow emission from single GaAs self-assembled quantum dots grown by droplet epitaxy. Nanotechnology, 20(39), 395601. doi:10.1088/0957-4484/20/39/395601 es_ES
dc.description.references Adorno, S., Bietti, S., & Sanguinetti, S. (2013). Annealing induced anisotropy in GaAs/AlGaAs quantum dots grown by droplet epitaxy. Journal of Crystal Growth, 378, 515-518. doi:10.1016/j.jcrysgro.2012.11.006 es_ES
dc.description.references Horikoshi, Y., Kawashima, M., & Yamaguchi, H. (1988). Migration-Enhanced Epitaxy of GaAs and AlGaAs. Japanese Journal of Applied Physics, 27(Part 1, No. 2), 169-179. doi:10.1143/jjap.27.169 es_ES


Este ítem aparece en la(s) siguiente(s) colección(ones)

Mostrar el registro sencillo del ítem