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Optical characterization of individual GaAs quantum dots grown with height control technique

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Optical characterization of individual GaAs quantum dots grown with height control technique

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Sarti, F.; Muñoz Matutano, G.; Bietti, S.; Vinattieri, A.; Sanguinetti, S.; Gurioli, M. (2013). Optical characterization of individual GaAs quantum dots grown with height control technique. Journal of Applied Physics. 114(2):1243011-1243014. doi:10.1063/1.4821901

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Título: Optical characterization of individual GaAs quantum dots grown with height control technique
Autor: Sarti, F. Muñoz Matutano, Guillermo Bietti, S. Vinattieri, A. Sanguinetti, S. Gurioli, M.
Entidad UPV: Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions
Fecha difusión:
Resumen:
We show that the epitaxial growth of height-controlled GaAs quantum dots, leading to the reduction of the inhomogeneous emission bandwidth, produces individual nanostructures of peculiar morphology. Besides the height ...[+]
Palabras clave: Epitaxy
Derechos de uso: Reserva de todos los derechos
Fuente:
Journal of Applied Physics. (issn: 0021-8979 )
DOI: 10.1063/1.4821901
Editorial:
American Institute of Physics (AIP)
Versión del editor: http://dx.doi.org/10.1063/1.4821901
Tipo: Artículo

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