Mostrar el registro sencillo del ítem
dc.contributor.author | Gomis Hilario, Oscar | es_ES |
dc.contributor.author | Vilaplana Cerda, Rosario Isabel | es_ES |
dc.contributor.author | Manjón Herrera, Francisco Javier | es_ES |
dc.contributor.author | Rodríguez-Hernández, P. | es_ES |
dc.contributor.author | Pérez-González, E. | es_ES |
dc.contributor.author | Muñoz, A. | es_ES |
dc.contributor.author | Kucek, V. | es_ES |
dc.contributor.author | Drasar, C. | es_ES |
dc.date.accessioned | 2015-03-06T10:09:09Z | |
dc.date.available | 2015-03-06T10:09:09Z | |
dc.date.issued | 2011-11-28 | |
dc.identifier.issn | 1098-0121 | |
dc.identifier.uri | http://hdl.handle.net/10251/47799 | |
dc.description.abstract | We report an experimental and theoretical lattice dynamics study of antimony telluride (Sb 2Te 3) up to 26 GPa together with a theoretical study of its structural stability under pressure. Raman-active modes of the low-pressure rhombohedral (R-3m) phase were observed up to 7.7 GPa. Changes of the frequencies and linewidths were observed around 3.5 GPa where an electronic topological transition was previously found. Raman-mode changes evidence phase transitions at 7.7, 14.5, and 25GPa. The frequencies and pressure coefficients of the new phases above 7.7 and 14.5 GPa agree with those calculated for the monoclinic C2/m and C2/c structures recently observed at high pressures in Bi 2Te 3 and also for the C2/m phase in the case of Bi 2Se 3 and Sb 2Te 3. Above 25 GPa no Raman-active modes are observed in Sb 2Te 3, similarly to the case of Bi 2Te 3 and Bi 2Se 3. Therefore, it is possible that the structure of Sb 2Te 3 above 25 GPa is the same disordered bcc phase already found in Bi 2Te 3 by x-ray diffraction studies. Upon pressure release, Sb 2Te 3 reverts back to the original rhombohedral phase after considerable hysteresis. Raman- and IR-mode symmetries, frequencies, and pressure coefficients in the different phases are reported and discussed. © 2011 American Physical Society. | es_ES |
dc.description.sponsorship | This work has been done under financial support from Spanish MICINN under Project Nos. MAT2010-21270-C04-03/04 and CSD-2007-00045 and supported by the Ministry of Education, Youth and Sports of the Czech Republic (MSM 0021627501). E. P.-G. acknowledges the financial support of the Spanish MEC under a FPI fellowship. Supercomputer time has been provided by the Red Espanola de Supercomputacion (RES) and the MALTA cluster. | en_EN |
dc.language | Inglés | es_ES |
dc.publisher | American Physical Society | es_ES |
dc.relation.ispartof | Physical Review B | es_ES |
dc.rights | Reserva de todos los derechos | es_ES |
dc.subject | Electronic topological transition | es_ES |
dc.subject | Initio molecular-dynamics | es_ES |
dc.subject | Total-Energy calculations | es_ES |
dc.subject | Augmented-wave method | es_ES |
dc.subject | Single dirac cone | es_ES |
dc.subject | Thermoelectric properties | es_ES |
dc.subject | Phase-transition | es_ES |
dc.subject | Hydrostatic pressure | es_ES |
dc.subject | Basis-set | es_ES |
dc.subject | Bi2Te3 | es_ES |
dc.subject.classification | FISICA APLICADA | es_ES |
dc.title | Lattice dynamics of Sb2Te3 at high pressures | es_ES |
dc.type | Artículo | es_ES |
dc.identifier.doi | 10.1103/PhysRevB.84.174305 | |
dc.relation.projectID | info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-03/ES/MATERIALES, NANOMATERIALES Y AGREGRADOS BAJO CONDICIONES EXTREMAS. PROPIEDADES ELECTRONICAS Y DINAMICAS DESDE METODOS AB INITIO/ / | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/MSMT//0021627501/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-04/ES/CRECIMIENTO Y CARACTERIZACION DE NANOESTRUCTURAS DE OXIDOS METALICOS BAJO ALTAS PRESIONES/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/MEC//CSD2007-00045/ES/MATERIA A ALTA PRESION/ | es_ES |
dc.rights.accessRights | Abierto | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Instituto de Diseño para la Fabricación y Producción Automatizada - Institut de Disseny per a la Fabricació i Producció Automatitzada | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica - Centre de Tecnologies Físiques: Acústica, Materials i Astrofísica | es_ES |
dc.description.bibliographicCitation | Gomis Hilario, O.; Vilaplana Cerda, RI.; Manjón Herrera, FJ.; Rodríguez-Hernández, P.; Pérez-González, E.; Muñoz, A.; Kucek, V.... (2011). Lattice dynamics of Sb2Te3 at high pressures. Physical Review B. 84:174305-1-174305-12. https://doi.org/10.1103/PhysRevB.84.174305 | es_ES |
dc.description.accrualMethod | S | es_ES |
dc.relation.publisherversion | http://journals.aps.org/prb/pdf/10.1103/PhysRevB.84.174305 | es_ES |
dc.description.upvformatpinicio | 174305-1 | es_ES |
dc.description.upvformatpfin | 174305-12 | es_ES |
dc.type.version | info:eu-repo/semantics/publishedVersion | es_ES |
dc.description.volume | 84 | es_ES |
dc.relation.senia | 206024 | |
dc.identifier.eissn | 1550-235X | |
dc.contributor.funder | Ministry of Education, Youth and Sports, República Checa | es_ES |
dc.contributor.funder | Ministerio de Educación y Ciencia | es_ES |
dc.description.references | Snyder, G. J., & Toberer, E. S. (2008). Complex thermoelectric materials. Nature Materials, 7(2), 105-114. doi:10.1038/nmat2090 | es_ES |
dc.description.references | Venkatasubramanian, R., Siivola, E., Colpitts, T., & O’Quinn, B. (2001). Thin-film thermoelectric devices with high room-temperature figures of merit. Nature, 413(6856), 597-602. doi:10.1038/35098012 | es_ES |
dc.description.references | Harman, T. C. (2002). Quantum Dot Superlattice Thermoelectric Materials and Devices. Science, 297(5590), 2229-2232. doi:10.1126/science.1072886 | es_ES |
dc.description.references | Chen, J., Sun, T., Sim, D., Peng, H., Wang, H., Fan, S., … Yan, Q. (2010). Sb2Te3Nanoparticles with Enhanced Seebeck Coefficient and Low Thermal Conductivity. Chemistry of Materials, 22(10), 3086-3092. doi:10.1021/cm9038297 | es_ES |
dc.description.references | Yin, Y., Sone, H., & Hosaka, S. (2007). Characterization of nitrogen-doped Sb2Te3 films and their application to phase-change memory. Journal of Applied Physics, 102(6), 064503. doi:10.1063/1.2778737 | es_ES |
dc.description.references | Kim, M. S., Cho, S. H., Hong, S. K., Roh, J. S., & Choi, D. J. (2008). Crystallization characteristics of nitrogen-doped Sb2Te3 films for PRAM application. Ceramics International, 34(4), 1043-1046. doi:10.1016/j.ceramint.2007.09.078 | es_ES |
dc.description.references | Anderson, T. L., & Krause, H. B. (1974). Refinement of the Sb2Te3 and Sb2Te2Se structures and their relationship to nonstoichiometric Sb2Te3−y Se y compounds. Acta Crystallographica Section B Structural Crystallography and Crystal Chemistry, 30(5), 1307-1310. doi:10.1107/s0567740874004729 | es_ES |
dc.description.references | Zhang, H., Liu, C.-X., Qi, X.-L., Dai, X., Fang, Z., & Zhang, S.-C. (2009). Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface. Nature Physics, 5(6), 438-442. doi:10.1038/nphys1270 | es_ES |
dc.description.references | Hasan, M. Z., & Kane, C. L. (2010). Colloquium: Topological insulators. Reviews of Modern Physics, 82(4), 3045-3067. doi:10.1103/revmodphys.82.3045 | es_ES |
dc.description.references | Moore, J. E. (2010). The birth of topological insulators. Nature, 464(7286), 194-198. doi:10.1038/nature08916 | es_ES |
dc.description.references | Xia, Y., Qian, D., Hsieh, D., Wray, L., Pal, A., Lin, H., … Hasan, M. Z. (2009). Observation of a large-gap topological-insulator class with a single Dirac cone on the surface. Nature Physics, 5(6), 398-402. doi:10.1038/nphys1274 | es_ES |
dc.description.references | Wang, G., & Cagin, T. (2007). Electronic structure of the thermoelectric materialsBi2Te3andSb2Te3from first-principles calculations. Physical Review B, 76(7). doi:10.1103/physrevb.76.075201 | es_ES |
dc.description.references | Chen, Y. L., Analytis, J. G., Chu, J.-H., Liu, Z. K., Mo, S.-K., Qi, X. L., … Shen, Z.-X. (2009). Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3. Science, 325(5937), 178-181. doi:10.1126/science.1173034 | es_ES |
dc.description.references | Badding, J. V., Meng, J. F., & Polvani, D. A. (1998). Pressure Tuning in the Search for New and Improved Solid State Materials. Chemistry of Materials, 10(10), 2889-2894. doi:10.1021/cm9802393 | es_ES |
dc.description.references | Polvani, D. A., Meng, J. F., Chandra Shekar, N. V., Sharp, J., & Badding, J. V. (2001). Large Improvement in Thermoelectric Properties in Pressure-Tuned p-Type Sb1.5Bi0.5Te3. Chemistry of Materials, 13(6), 2068-2071. doi:10.1021/cm000888q | es_ES |
dc.description.references | Chandra Shekar, N. V., Polvani, D. A., Meng, J. F., & Badding, J. V. (2005). Improved thermoelectric properties due to electronic topological transition under high pressure. Physica B: Condensed Matter, 358(1-4), 14-18. doi:10.1016/j.physb.2004.12.020 | es_ES |
dc.description.references | Ovsyannikov, S. V., Shchennikov, V. V., Vorontsov, G. V., Manakov, A. Y., Likhacheva, A. Y., & Kulbachinskii, V. A. (2008). Giant improvement of thermoelectric power factor of Bi2Te3 under pressure. Journal of Applied Physics, 104(5), 053713. doi:10.1063/1.2973201 | es_ES |
dc.description.references | Ovsyannikov, S. V., & Shchennikov, V. V. (2010). High-Pressure Routes in the Thermoelectricity or How One Can Improve a Performance of Thermoelectrics†. Chemistry of Materials, 22(3), 635-647. doi:10.1021/cm902000x | es_ES |
dc.description.references | Li, C., Ruoff, A. L., & Spencer, C. W. (1961). Effect of Pressure on the Energy Gap of Bi2Te3. Journal of Applied Physics, 32(9), 1733-1735. doi:10.1063/1.1728426 | es_ES |
dc.description.references | Khvostantsev, L. G., Orlov, A. I., Abrikosov, N. K., & Ivanova, L. D. (1980). Thermoelectric properties and phase transition in Sb2Te3 under hydrostatic pressure up to 9 GPa. Physica Status Solidi (a), 58(1), 37-40. doi:10.1002/pssa.2210580103 | es_ES |
dc.description.references | Sakai, N., Kajiwara, T., Takemura, K., Minomura, S., & Fujii, Y. (1981). Pressure-induced phase transition in Sb2Te3. Solid State Communications, 40(12), 1045-1047. doi:10.1016/0038-1098(81)90248-9 | es_ES |
dc.description.references | Khvostantsev, L. G., Orlov, A. I., Abrikosov, N. K., & Ivanova, L. D. (1985). Kinetic Properties and Phase Transitions in Sb2Te3 under Hydrostatic Pressure up to 9 GPa. physica status solidi (a), 89(1), 301-309. doi:10.1002/pssa.2210890132 | es_ES |
dc.description.references | Thonhauser, T., Scheidemantel, T. J., Sofo, J. O., Badding, J. V., & Mahan, G. D. (2003). Thermoelectric properties ofSb2Te3under pressure and uniaxial stress. Physical Review B, 68(8). doi:10.1103/physrevb.68.085201 | es_ES |
dc.description.references | Thonhauser, T. (2004). Influence of negative pressure on thermoelectric properties of Sb2Te3. Solid State Communications, 129(4), 249-253. doi:10.1016/j.ssc.2003.10.006 | es_ES |
dc.description.references | Einaga, M., Tanabe, Y., Nakayama, A., Ohmura, A., Ishikawa, F., & Yamada, Y. (2010). New superconducting phase of Bi2Te3under pressure above 11 GPa. Journal of Physics: Conference Series, 215, 012036. doi:10.1088/1742-6596/215/1/012036 | es_ES |
dc.description.references | Zhang, J. L., Zhang, S. J., Weng, H. M., Zhang, W., Yang, L. X., Liu, Q. Q., … Jin, C. Q. (2010). Pressure-induced superconductivity in topological parent compound Bi2Te3. Proceedings of the National Academy of Sciences, 108(1), 24-28. doi:10.1073/pnas.1014085108 | es_ES |
dc.description.references | Jacobsen, M. K., Kumar, R. S., Cornelius, A. L., Sinogeiken, S. V., Nico, M. F., Elert, M., … Nguyen, J. (2008). HIGH PRESSURE X-RAY DIFFRACTION STUDIES OF Bi[sub 2−x]Sb[sub x]Te[sub 3] (x = 0,1,2). doi:10.1063/1.2833001 | es_ES |
dc.description.references | Nakayama, A., Einaga, M., Tanabe, Y., Nakano, S., Ishikawa, F., & Yamada, Y. (2009). Structural phase transition in Bi2Te3 under high pressure. High Pressure Research, 29(2), 245-249. doi:10.1080/08957950902951633 | es_ES |
dc.description.references | Einaga, M., Ohmura, A., Nakayama, A., Ishikawa, F., Yamada, Y., & Nakano, S. (2011). Pressure-induced phase transition of Bi2Te3to a bcc structure. Physical Review B, 83(9). doi:10.1103/physrevb.83.092102 | es_ES |
dc.description.references | Zhu, L., Wang, H., Wang, Y., Lv, J., Ma, Y., Cui, Q., … Zou, G. (2011). Substitutional Alloy of Bi and Te at High Pressure. Physical Review Letters, 106(14). doi:10.1103/physrevlett.106.145501 | es_ES |
dc.description.references | Itskevich, E. S., Kashirskaya, L. M., & Kraidenov, V. F. (1997). Anomalies in the low-temperature thermoelectric power of p-Bi2Te3 and Te associated with topological electronic transitions under pressure. Semiconductors, 31(3), 276-278. doi:10.1134/1.1187126 | es_ES |
dc.description.references | Polian, A., Gauthier, M., Souza, S. M., Trichês, D. M., Cardoso de Lima, J., & Grandi, T. A. (2011). Two-dimensional pressure-induced electronic topological transition in Bi2Te3. Physical Review B, 83(11). doi:10.1103/physrevb.83.113106 | es_ES |
dc.description.references | Vilaplana, R., Santamaría-Pérez, D., Gomis, O., Manjón, F. J., González, J., Segura, A., … Kucek, V. (2011). Structural and vibrational study of Bi2Se3under high pressure. Physical Review B, 84(18). doi:10.1103/physrevb.84.184110 | es_ES |
dc.description.references | Richter, W., & Becker, C. R. (1977). A Raman and far-infrared investigation of phonons in the rhombohedral V2–VI3 compounds Bi2Te3, Bi2Se3, Sb2Te3 and Bi2(Te1−xSex)3 (0 <x < 1), (Bi1−ySby)2Te3 (0 <y < 1). Physica Status Solidi (b), 84(2), 619-628. doi:10.1002/pssb.2220840226 | es_ES |
dc.description.references | Sosso, G. C., Caravati, S., & Bernasconi, M. (2009). Vibrational properties of crystalline Sb2Te3from first principles. Journal of Physics: Condensed Matter, 21(9), 095410. doi:10.1088/0953-8984/21/9/095410 | es_ES |
dc.description.references | Dagens, L. (1978). Phonon anomaly near a Fermi surface topological transition. Journal of Physics F: Metal Physics, 8(10), 2093-2113. doi:10.1088/0305-4608/8/10/010 | es_ES |
dc.description.references | Dagens, L., & Lopez-Rios, C. (1979). Thermodynamic properties of a metal near a Fermi surface topological transition: the anomalous electron-phonon interaction contribution. Journal of Physics F: Metal Physics, 9(11), 2195-2216. doi:10.1088/0305-4608/9/11/011 | es_ES |
dc.description.references | Goncharov, A. ., & Struzhkin, V. . (2003). Pressure dependence of the Raman spectrum, lattice parameters and superconducting critical temperature of MgB2: evidence for pressure-driven phonon-assisted electronic topological transition. Physica C: Superconductivity, 385(1-2), 117-130. doi:10.1016/s0921-4534(02)02311-0 | es_ES |
dc.description.references | Antonangeli, D., Farber, D. L., Said, A. H., Benedetti, L. R., Aracne, C. M., Landa, A., … Klepeis, J. E. (2010). Shear softening in tantalum at megabar pressures. Physical Review B, 82(13). doi:10.1103/physrevb.82.132101 | es_ES |
dc.description.references | Santamaría-Pérez, D., Vegas, A., Muehle, C., & Jansen, M. (2011). Structural behaviour of alkaline sulfides under compression: High-pressure experimental study on Cs2S. The Journal of Chemical Physics, 135(5), 054511. doi:10.1063/1.3617236 | es_ES |
dc.description.references | Vilaplana, R., Gomis, O., Manjón, F. J., Segura, A., Pérez-González, E., Rodríguez-Hernández, P., … Kucek, V. (2011). High-pressure vibrational and optical study of Bi2Te3. Physical Review B, 84(10). doi:10.1103/physrevb.84.104112 | es_ES |
dc.description.references | Larson, P. (2006). Effects of uniaxial and hydrostatic pressure on the valence band maximum inSb2Te3: An electronic structure study. Physical Review B, 74(20). doi:10.1103/physrevb.74.205113 | es_ES |
dc.description.references | Lošťák, P., Beneš, L., Civiš, S., & Süssmann, H. (1990). Preparation and some physical properties of Bi2−xInxSe3 single crystals. Journal of Materials Science, 25(1), 277-282. doi:10.1007/bf00544220 | es_ES |
dc.description.references | Horák, J., Quayle, P. C., Dyck, J. S., Drašar, Č., Lošt’ák, P., & Uher, C. (2008). Defect structure of Sb2−xCrxTe3 single crystals. Journal of Applied Physics, 103(1), 013516. doi:10.1063/1.2826940 | es_ES |
dc.description.references | Piermarini, G. J., Block, S., & Barnett, J. D. (1973). Hydrostatic limits in liquids and solids to 100 kbar. Journal of Applied Physics, 44(12), 5377-5382. doi:10.1063/1.1662159 | es_ES |
dc.description.references | Errandonea, D., Meng, Y., Somayazulu, M., & Häusermann, D. (2005). Pressure-induced transition in titanium metal: a systematic study of the effects of uniaxial stress. Physica B: Condensed Matter, 355(1-4), 116-125. doi:10.1016/j.physb.2004.10.030 | es_ES |
dc.description.references | Syassen, K. (2008). Ruby under pressure. High Pressure Research, 28(2), 75-126. doi:10.1080/08957950802235640 | es_ES |
dc.description.references | Hohenberg, P., & Kohn, W. (1964). Inhomogeneous Electron Gas. Physical Review, 136(3B), B864-B871. doi:10.1103/physrev.136.b864 | es_ES |
dc.description.references | Kresse, G., & Hafner, J. (1993). Ab initiomolecular dynamics for liquid metals. Physical Review B, 47(1), 558-561. doi:10.1103/physrevb.47.558 | es_ES |
dc.description.references | Kresse, G., & Hafner, J. (1994). Ab initiomolecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium. Physical Review B, 49(20), 14251-14269. doi:10.1103/physrevb.49.14251 | es_ES |
dc.description.references | Kresse, G., & Furthmüller, J. (1996). Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Computational Materials Science, 6(1), 15-50. doi:10.1016/0927-0256(96)00008-0 | es_ES |
dc.description.references | Kresse, G., & Furthmüller, J. (1996). Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set. Physical Review B, 54(16), 11169-11186. doi:10.1103/physrevb.54.11169 | es_ES |
dc.description.references | Blöchl, P. E. (1994). Projector augmented-wave method. Physical Review B, 50(24), 17953-17979. doi:10.1103/physrevb.50.17953 | es_ES |
dc.description.references | Kresse, G., & Joubert, D. (1999). From ultrasoft pseudopotentials to the projector augmented-wave method. Physical Review B, 59(3), 1758-1775. doi:10.1103/physrevb.59.1758 | es_ES |
dc.description.references | Perdew, J. P., Ruzsinszky, A., Csonka, G. I., Vydrov, O. A., Scuseria, G. E., Constantin, L. A., … Burke, K. (2008). Restoring the Density-Gradient Expansion for Exchange in Solids and Surfaces. Physical Review Letters, 100(13). doi:10.1103/physrevlett.100.136406 | es_ES |
dc.description.references | Mujica, A., Rubio, A., Muñoz, A., & Needs, R. J. (2003). High-pressure phases of group-IV, III–V, and II–VI compounds. Reviews of Modern Physics, 75(3), 863-912. doi:10.1103/revmodphys.75.863 | es_ES |
dc.description.references | Blanco, M. A., Francisco, E., & Luaña, V. (2004). GIBBS: isothermal-isobaric thermodynamics of solids from energy curves using a quasi-harmonic Debye model. Computer Physics Communications, 158(1), 57-72. doi:10.1016/j.comphy.2003.12.001 | es_ES |
dc.description.references | Cardona, M. (2004). Phonon widths versus pressure. High Pressure Research, 24(1), 17-23. doi:10.1080/08957950310001635819 | es_ES |
dc.description.references | Cardona, M. (2004). Effects of pressure on the phonon–phonon and electron–phonon interactions in semiconductors. physica status solidi (b), 241(14), 3128-3137. doi:10.1002/pssb.200405202 | es_ES |
dc.description.references | Ulrich, C., Mroginski, M. A., Goñi, A. R., Cantarero, A., Schwarz, U., Muñoz, V., & Syassen, K. (1996). Vibrational Properties of InSe under Pressure: Experiment and Theory. physica status solidi (b), 198(1), 121-127. doi:10.1002/pssb.2221980117 | es_ES |
dc.description.references | Kulibekov, A. M., Olijnyk, H. P., Jephcoat, A. P., Salaeva, Z. Y., Onari, S., & Allakhverdiev, K. R. (2003). Raman scattering under pressure and the phase transition in ɛ-GaSe. physica status solidi (b), 235(2), 517-520. doi:10.1002/pssb.200301613 | es_ES |
dc.description.references | Cheng, W., & Ren, S.-F. (2011). Phonons of single quintuple Bi2Te3and Bi2Se3films and bulk materials. Physical Review B, 83(9). doi:10.1103/physrevb.83.094301 | es_ES |
dc.description.references | Buga, S. G., Serebryanaya, N. R., Dubitskiy, G. A., Semenova, E. E., Aksenenkov, V. V., & Blank, V. D. (2011). Structure and electrical properties of Sb2Te3and Bi0.4Sb1.6Te3metastable phases obtained by HPHT treatment. High Pressure Research, 31(1), 86-90. doi:10.1080/08957959.2010.523422 | es_ES |