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Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3 under high pressure

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Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3 under high pressure

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Segura, A.; Panchal, V.; Sánchez-Royo, JF.; Marín-Borrás, V.; Muñoz-Sanjosé, V.; Rodríguez-Hernández, P.; Muñoz, A.... (2012). Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3 under high pressure. Physical Review B. 85:195139-1-195139-9. https://doi.org/10.1103/PhysRevB.85.195139

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Título: Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3 under high pressure
Autor: Segura, A. Panchal, V. Sánchez-Royo, J. F. Marín-Borrás, V. Muñoz-Sanjosé, V. Rodríguez-Hernández, P. Muñoz, A. Pérez-González, E. Manjón Herrera, Francisco Javier González, J.
Entidad UPV: Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada
Universitat Politècnica de València. Instituto de Diseño para la Fabricación y Producción Automatizada - Institut de Disseny per a la Fabricació i Producció Automatitzada
Fecha difusión:
Resumen:
[EN] This paper reports an experimental and theoretical investigation on the electronic structure of bismuth selenide (Bi2Se3) up to 9 GPa. The optical gap of Bi2Se3 increases from 0.17 eV at ambient pressure to 0.45 eV ...[+]
Palabras clave: Initio molecular-dynamics , Conduction-band structure , Total-Energy calculations , Augmented-wave method , Diamond-anvil cell , Single dirac cone , Bismuth selenide , Basis-set , Surface , Semiconductors
Derechos de uso: Reserva de todos los derechos
Fuente:
Physical Review B. (issn: 1098-0121 ) (eissn: 1550-235X )
DOI: 10.1103/PhysRevB.85.195139
Editorial:
American Physical Society
Versión del editor: http://journals.aps.org/prb/pdf/10.1103/PhysRevB.85.195139
Código del Proyecto:
info:eu-repo/grantAgreement/MICINN//MAT2008-06873-C02-02/ES/SEMICONDUCTORES MAGNETICOS DE GAP ANCHO (ZNM)O (M:CO,MN,FE) Y SUS FASES DE ALTA PRESION. DEPOSICION E CAPA DELGADA Y PROPIEDADES ESTRUCTURALES Y MAGNETO-OPTICAS/
info:eu-repo/grantAgreement/GVA//PROMETEO%2F2011%2F035/
info:eu-repo/grantAgreement/MEC//MAT2007-66129/ES/OXIDOS SEMICONDUCTORES II-VI PARA LA OPTOELECTRONICA UV Y LA ESPINTRONICA/
info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-03/ES/MATERIALES, NANOMATERIALES Y AGREGRADOS BAJO CONDICIONES EXTREMAS. PROPIEDADES ELECTRONICAS Y DINAMICAS DESDE METODOS AB INITIO/
info:eu-repo/grantAgreement/MEC//CSD2007-00045/ES/MATERIA A ALTA PRESION/
Agradecimientos:
This work has been done under financial support from Spanish MICINN under Grants No. MAT2008-06873-C02-02, No. MAT2007-66129, No. MAT2010-21270-C04-03/04, No. CSD2007-00045, and Prometeo No. GV2011/035. The supercomputer ...[+]
Tipo: Artículo

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