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Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3 under high pressure

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Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3 under high pressure

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Segura, A.; Panchal, V.; Sánchez-Royo, JF.; Marín-Borrás, V.; Muñoz-Sanjosé, V.; Rodríguez-Hernández, P.; Muñoz, A.... (2012). Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3 under high pressure. Physical Review B. 85:195139-1-195139-9. doi:10.1103/PhysRevB.85.195139

Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/48141

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Title: Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3 under high pressure
Author: Segura, A. Panchal, V. Sánchez-Royo, J. F. Marín-Borrás, V. Muñoz-Sanjosé, V. Rodríguez-Hernández, P. Muñoz, A. Pérez-González, E. Manjón Herrera, Francisco Javier González, J.
UPV Unit: Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada
Universitat Politècnica de València. Instituto de Diseño para la Fabricación y Producción Automatizada - Institut de Disseny per a la Fabricació i Producció Automatitzada
Issued date:
Abstract:
[EN] This paper reports an experimental and theoretical investigation on the electronic structure of bismuth selenide (Bi2Se3) up to 9 GPa. The optical gap of Bi2Se3 increases from 0.17 eV at ambient pressure to 0.45 eV ...[+]
Subjects: Initio molecular-dynamics , Conduction-band structure , Total-Energy calculations , Augmented-wave method , Diamond-anvil cell , Single dirac cone , Bismuth selenide , Basis-set , Surface , Semiconductors
Copyrigths: Reserva de todos los derechos
Source:
Physical Review B. (issn: 1098-0121 ) (eissn: 1550-235X )
DOI: 10.1103/PhysRevB.85.195139
Publisher:
American Physical Society
Publisher version: http://journals.aps.org/prb/pdf/10.1103/PhysRevB.85.195139
Thanks:
This work has been done under financial support from Spanish MICINN under Grants No. MAT2008-06873-C02-02, No. MAT2007-66129, No. MAT2010-21270-C04-03/04, No. CSD2007-00045, and Prometeo No. GV2011/035. The supercomputer ...[+]
Type: Artículo

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