Segura, A.; Panchal, V.; Sánchez-Royo, JF.; Marín-Borrás, V.; Muñoz-Sanjosé, V.; Rodríguez-Hernández, P.; Muñoz, A.... (2012). Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3 under high pressure. Physical Review B. 85:195139-1-195139-9. doi:10.1103/PhysRevB.85.195139
Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/48141
Title:
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Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3 under high pressure
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Author:
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Segura, A.
Panchal, V.
Sánchez-Royo, J. F.
Marín-Borrás, V.
Muñoz-Sanjosé, V.
Rodríguez-Hernández, P.
Muñoz, A.
Pérez-González, E.
Manjón Herrera, Francisco Javier
González, J.
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UPV Unit:
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Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada
Universitat Politècnica de València. Instituto de Diseño para la Fabricación y Producción Automatizada - Institut de Disseny per a la Fabricació i Producció Automatitzada
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Issued date:
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Abstract:
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[EN] This paper reports an experimental and theoretical investigation on the electronic structure of bismuth selenide (Bi2Se3) up to 9 GPa. The optical gap of Bi2Se3 increases from 0.17 eV at ambient pressure to 0.45 eV ...[+]
[EN] This paper reports an experimental and theoretical investigation on the electronic structure of bismuth selenide (Bi2Se3) up to 9 GPa. The optical gap of Bi2Se3 increases from 0.17 eV at ambient pressure to 0.45 eV at 8 GPa. The quenching of the Burstein-Moss effect in degenerate samples and the shift of the free-carrier plasma frequency to lower energies reveal a quick decrease of the bulk three-dimensional (3D) electron concentration under pressure. On increasing pressure the behavior of Hall electron concentration and mobility depends on the sample thickness, consistently with a gradual transition from mainly 3D transport at ambient pressure to mainly two-dimensional (2D) transport at high pressure. Two-carrier transport equations confirm the trapping of high-mobility 3D electrons, an effect that can be related to a shallow-to-deep transformation of donor levels, associated with a change in the ordering of the conduction band minima. The high apparent areal density and low electron mobility of 2D electrons are not compatible with their expected properties in a Dirac cone. Measured transport parameters at high pressure are most probably affected by the presence of holes, either in an accumulation surface layer or as minority carriers in the bulk. ©2012 American Physical Society
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Subjects:
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Initio molecular-dynamics
,
Conduction-band structure
,
Total-Energy calculations
,
Augmented-wave method
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Diamond-anvil cell
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Single dirac cone
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Bismuth selenide
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Basis-set
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Surface
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Semiconductors
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Copyrigths:
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Reserva de todos los derechos
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Source:
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Physical Review B. (issn:
1098-0121
) (eissn:
1550-235X
)
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DOI:
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10.1103/PhysRevB.85.195139
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Publisher:
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American Physical Society
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Publisher version:
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http://journals.aps.org/prb/pdf/10.1103/PhysRevB.85.195139
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Project ID:
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MICINN/MAT2008-06873-C02-02
GV/PROMETEO/2011/035
MICINN/MAT2007-66129
MICINN/MAT2010-21270-C04-03/04
MICINN/CSD2007-00045
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Thanks:
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This work has been done under financial support from Spanish MICINN under Grants No. MAT2008-06873-C02-02, No. MAT2007-66129, No. MAT2010-21270-C04-03/04, No. CSD2007-00045, and Prometeo No. GV2011/035. The supercomputer ...[+]
This work has been done under financial support from Spanish MICINN under Grants No. MAT2008-06873-C02-02, No. MAT2007-66129, No. MAT2010-21270-C04-03/04, No. CSD2007-00045, and Prometeo No. GV2011/035. The supercomputer time has been provided by the Red Espanola de Supercomputacion (RES) and the MALTA cluster.
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Type:
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Artículo
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