- -

Order-disorder processes in adamantine ternary ordered-vacancy compounds

RiuNet: Repositorio Institucional de la Universidad Politécnica de Valencia

Compartir/Enviar a

Citas

Estadísticas

  • Estadisticas de Uso

Order-disorder processes in adamantine ternary ordered-vacancy compounds

Mostrar el registro completo del ítem

Manjón Herrera, FJ.; Gomis Hilario, O.; Vilaplana Cerda, RI.; Sans Tresserras, JÁ.; Ortiz, HM. (2013). Order-disorder processes in adamantine ternary ordered-vacancy compounds. physica status solidi (b). 250(8):1496-1504. https://doi.org/10.1002/pssb.201248596

Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/50977

Ficheros en el ítem

[Cerrado]
Nombre: F.J. Manjón;Gomis ...
Tamaño: 1.061Mb
Formato: PDF
Descripción: Versión editorial
Solicitar una copia al autor

Metadatos del ítem

Título: Order-disorder processes in adamantine ternary ordered-vacancy compounds
Autor: Manjón Herrera, Francisco Javier Gomis Hilario, Oscar Vilaplana Cerda, Rosario Isabel Sans Tresserras, Juan Ángel Ortiz, H. M.
Entidad UPV: Universitat Politècnica de València. Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica - Centre de Tecnologies Físiques: Acústica, Materials i Astrofísica
Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada
Universitat Politècnica de València. Instituto de Diseño para la Fabricación y Producción Automatizada - Institut de Disseny per a la Fabricació i Producció Automatitzada
Fecha difusión:
Resumen:
Adamantine ternary ordered-vacancy compounds (OVCs) of the AB(2)X(4) family derive from the zincblende structure of binary AX compounds and share many properties with the chalcopyrite-type ternary ABX(2) compounds. AB(2)X(4) ...[+]
Palabras clave: Defect calcopyrite , High pressure , High temperature , Order-disorder transitions , Ordered-vacancy compounds , Thiogallate
Derechos de uso: Cerrado
Fuente:
physica status solidi (b). (issn: 0370-1972 ) (eissn: 1521-3951 )
DOI: 10.1002/pssb.201248596
Editorial:
Wiley-VCH Verlag
Versión del editor: http://dx.doi.org/10.1002/pssb.201248596
Código del Proyecto:
info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-04/ES/CRECIMIENTO Y CARACTERIZACION DE NANOESTRUCTURAS DE OXIDOS METALICOS BAJO ALTAS PRESIONES/
info:eu-repo/grantAgreement/UPV//PAID-05-11-UPV2011-0914/
info:eu-repo/grantAgreement/MEC//CSD2007-00045/ES/MATERIA A ALTA PRESION/
info:eu-repo/grantAgreement/UPV//PAID-06-11-UPV2011-0966/
Agradecimientos:
This study was supported by the Spanish government MEC under Grants No: MAT2010-21270-C04-04, by MALTA Consolider Ingenio 2010 project (CSD2007-00045), and by the Vicerrectorado de Investigacion y Desarrollo of the Universitat ...[+]
Tipo: Artículo

References

Bernard, J. E., & Zunger, A. (1988). Ordered-vacancy-compound semiconductors: PseudocubicCdIn2Se4. Physical Review B, 37(12), 6835-6856. doi:10.1103/physrevb.37.6835

Jiang, X., & Lambrecht, W. R. L. (2004). Electronic band structure of ordered vacancy defect chalcopyrite compounds with formulaII−III2−VI4. Physical Review B, 69(3). doi:10.1103/physrevb.69.035201

Garbato, L., Ledda, F., & Rucci, A. (1987). Structural distortions and polymorphic behaviour in ABC2 and AB2C4 tetrahedral compounds. Progress in Crystal Growth and Characterization, 15(1), 1-41. doi:10.1016/0146-3535(87)90008-6 [+]
Bernard, J. E., & Zunger, A. (1988). Ordered-vacancy-compound semiconductors: PseudocubicCdIn2Se4. Physical Review B, 37(12), 6835-6856. doi:10.1103/physrevb.37.6835

Jiang, X., & Lambrecht, W. R. L. (2004). Electronic band structure of ordered vacancy defect chalcopyrite compounds with formulaII−III2−VI4. Physical Review B, 69(3). doi:10.1103/physrevb.69.035201

Garbato, L., Ledda, F., & Rucci, A. (1987). Structural distortions and polymorphic behaviour in ABC2 and AB2C4 tetrahedral compounds. Progress in Crystal Growth and Characterization, 15(1), 1-41. doi:10.1016/0146-3535(87)90008-6

Razzetti, C., Lottici, P. P., & Antonioli, G. (1987). Structure and lattice dynamics of nonmagnetic defective AIIBIII2XIV4 compounds and alloys. Progress in Crystal Growth and Characterization, 15(1), 43-73. doi:10.1016/0146-3535(87)90009-8

Alonso-Gutiérrez, P., Sanjuán, M. L., & Morón, M. C. (2009). Thermally activated cation ordering in Zn0.5Mn0.5Ga2Se4single crystals studied by Raman scattering. physica status solidi (c), 6(5), 1182-1186. doi:10.1002/pssc.200881218

Caldera, D., Morocoima, M., Quintero, M., Rincon, C., Casanova, R., & Grima, P. (2011). On the crystal structure of the defective ternary compound. Solid State Communications, 151(3), 212-215. doi:10.1016/j.ssc.2010.11.031

Range, K.-J., Becker, W., & Weiss, A. (1969). Eine Hochdruckphase des ZnIn2S4 mit Spinellstruktur. Zeitschrift für Naturforschung B, 24(7), 811-812. doi:10.1515/znb-1969-0703

Range, K.-J., Becker, W., & Weiss, A. (1969). Notizen: Das Verhalten von CdIn2Se4 bei hohen Drucken. Zeitschrift für Naturforschung B, 24(12), 1654-1655. doi:10.1515/znb-1969-1233

Burlakov, I. I., Raptis, Y., Ursaki, V. V., Anastassakis, E., & Tiginyanu, I. M. (1997). Order-disorder phase transition in CdAl2S4 under hydrostatic pressure. Solid State Communications, 101(5), 377-381. doi:10.1016/s0038-1098(96)00602-3

Ursaki, V. V., Burlakov, I. I., Tiginyanu, I. M., Raptis, Y. S., Anastassakis, E., & Anedda, A. (1999). Phase transitions in defect chalcopyrite compounds under hydrostatic pressure. Physical Review B, 59(1), 257-268. doi:10.1103/physrevb.59.257

Grzechnik, A., Ursaki, V. V., Syassen, K., Loa, I., Tiginyanu, I. M., & Hanfland, M. (2001). Pressure-Induced Phase Transitions in Cadmium Thiogallate CdGa2Se4. Journal of Solid State Chemistry, 160(1), 205-211. doi:10.1006/jssc.2001.9224

Allakhverdiev, K., Gashimzade, F., Kerimova, T., Mitani, T., Naitou, T., Matsuishi, K., & Onari, S. (2003). Raman scattering under pressure in ZnGa2Se4. Journal of Physics and Chemistry of Solids, 64(9-10), 1597-1601. doi:10.1016/s0022-3697(03)00077-5

Meenakshi, S., Vijyakumar, V., Godwal, B. K., Eifler, A., Orgzall, I., Tkachev, S., & Hochheimer, H. D. (2006). High pressure X-ray diffraction study of CdAl2Se4 and Raman study of AAl2Se4 (A=Hg, Zn) and CdAl2X4 (X=Se, S). Journal of Physics and Chemistry of Solids, 67(8), 1660-1667. doi:10.1016/j.jpcs.2006.02.015

Marquina, J., Power, C., Grima, P., Morocoima, M., Quintero, M., Couzinet, B., … González, J. (2006). Crystallographic properties of the MnGa2Se4 compound under high pressure. Journal of Applied Physics, 100(9), 093513. doi:10.1063/1.2358826

Errandonea, D., Kumar, R. S., Manjón, F. J., Ursaki, V. V., & Tiginyanu, I. M. (2008). High-pressure x-ray diffraction study on the structure and phase transitions of the defect-stannite ZnGa2Se4 and defect-chalcopyrite CdGa2S4. Journal of Applied Physics, 104(6), 063524. doi:10.1063/1.2981089

Meenakshi, S., Vijayakumar, V., Eifler, A., & Hochheimer, H. D. (2010). Pressure-induced phase transition in defect Chalcopyrites HgAl2Se4 and CdAl2S4. Journal of Physics and Chemistry of Solids, 71(5), 832-835. doi:10.1016/j.jpcs.2010.02.007

Gomis, O., Vilaplana, R., Manjón, F. J., Pérez-González, E., López-Solano, J., Rodríguez-Hernández, P., … Ursaki, V. V. (2012). High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds. Journal of Applied Physics, 111(1), 013518. doi:10.1063/1.3675162

Gastaldi, L., Simeone, M. G., & Viticoli, S. (1985). Cation ordering and crystal structures in AGa2X4 compounds (CoGa2S4, CdGa2S4, CdGa2Se4, HgGa2Se4, HgGa2Te4). Solid State Communications, 55(7), 605-607. doi:10.1016/0038-1098(85)90821-x

Binsma, J. J. M., Giling, L. J., & Bloem, J. (1981). Order—disorder behaviour and tetragonal distortion of chalcopyrite compounds. Physica Status Solidi (a), 63(2), 595-603. doi:10.1002/pssa.2210630226

Zunger, A. (1987). Order‐disorder transformation in ternary tetrahedral semiconductors. Applied Physics Letters, 50(3), 164-166. doi:10.1063/1.97649

Rinco´n, C. (1992). Order-disorder transition in ternary chalcopyrite compounds and pseudobinary alloys. Physical Review B, 45(22), 12716-12719. doi:10.1103/physrevb.45.12716

Lowe-Ma, C. K., & Vanderah, T. A. (1991). Structure of ZnGa2S4, a defect sphalerite derivative. Acta Crystallographica Section C Crystal Structure Communications, 47(5), 919-924. doi:10.1107/s0108270190011192

Eifler, A., Hecht, J.-D., Lippold, G., Riede, V., Grill, W., Krauß, G., & Krämer, V. (1999). Combined infrared and Raman study of the optical phonons of defect chalcopyrite single crystals. Physica B: Condensed Matter, 263-264, 806-808. doi:10.1016/s0921-4526(98)01292-7

Eifler, A., Krauss, G., Riede, V., Krämer, V., & Grill, W. (2005). Optical phonon modes and structure of ZnGa2Se4 and ZnGa2S4. Journal of Physics and Chemistry of Solids, 66(11), 2052-2057. doi:10.1016/j.jpcs.2005.09.049

Carpenter, G. B., Wu, P., Gao, Y.-M., & Wold, A. (1989). Redetermination of crystal structure of zinc thiogallate. Materials Research Bulletin, 24(9), 1077-1082. doi:10.1016/0025-5408(89)90064-0

Schwer, H., & Krämer, V. (1990). The crystal structures of CdAl2S4, HgAl2S4, and HgGa2S4. Zeitschrift für Kristallographie, 190(1-2), 103-110. doi:10.1524/zkri.1990.190.1-2.103

Haeuseler, H. (1978). FIR- und Ramanspektren von ternären Chalkogeniden des Galliums und Indiums mit Zink, Cadmium und Quecksilber. Journal of Solid State Chemistry, 26(4), 367-376. doi:10.1016/0022-4596(78)90171-8

Bacewicz, R., Lottici, P. P., & Razzetti, C. (1979). Raman scattering of the ordered-vacancy compound CdGa2Se4. Journal of Physics C: Solid State Physics, 12(17), 3603-3614. doi:10.1088/0022-3719/12/17/030

Razzetti, C., Lottici, P. P., & Bacewicz, R. (1982). Oblique phonon Raman scattering in CdGa2Se4. Journal of Physics C: Solid State Physics, 15(27), 5657-5665. doi:10.1088/0022-3719/15/27/022

Lottici, P. P., & Razzetti, C. (1983). A comparison of the raman spectra of ZnGa2Se4 and other gallium defect chalcopyrites. Solid State Communications, 46(9), 681-684. doi:10.1016/0038-1098(83)90506-9

Haeuseler, H., Wäschenbach, G., & Lutz, H. D. (1985). Directional Dispersion of the Phonon Modes in Optically Uniaxial Solids, Far-Infrared Reflection Spectra, Dielectric and Optic Constants, Dynamic Effective Ionic Charges of the Defect Chalcopyrites CdGa2S4, CdGa2Se4, HgGa2S4, and HgGa2Se4. physica status solidi (b), 129(2), 549-558. doi:10.1002/pssb.2221290212

Attolini, G., Bini, S., Lottici, P. P., & Razzetti, C. (1992). Effects of Group III Cation Substitution in the Raman Spectra of Some Defective Chalcopyrites. Crystal Research and Technology, 27(5), 685-690. doi:10.1002/crat.2170270519

Takahashi, Y., Namatsu, H., Machida, K., & Minegishi, K. (1993). Measurements of Diffusion Coefficiens of Water in Electron Cryclotron Resonance Plasma SiO2. Japanese Journal of Applied Physics, 32(Part 2, No. 3B), L431-L433. doi:10.1143/jjap.32.l431

Eifler, A., Hecht, J.-D., Riede, V., Lippold, G., Schmitz, W., Krauß, G., … Grill, W. (1999). Infrared and Raman study of lattice vibrations of CdAl2Se4and CdAl2S4single crystals. Journal of Physics: Condensed Matter, 11(25), 4821-4832. doi:10.1088/0953-8984/11/25/303

Kroumova, E., Aroyo, M. I., Perez-Mato, J. M., Kirov, A., Capillas, C., Ivantchev, S., & Wondratschek, H. (2003). Bilbao Crystallographic Server : Useful Databases and Tools for Phase-Transition Studies. Phase Transitions, 76(1-2), 155-170. doi:10.1080/0141159031000076110

Manjón, F. J., Marí, B., Serrano, J., & Romero, A. H. (2005). Silent Raman modes in zinc oxide and related nitrides. Journal of Applied Physics, 97(5), 053516. doi:10.1063/1.1856222

Vilaplana, R., Robledillo, M., Gomis, O., Sans, J. A., Manjón, F. J., Pérez-González, E., … Ursaki, V. V. (2013). Vibrational study of HgGa2S4under high pressure. Journal of Applied Physics, 113(9), 093512. doi:10.1063/1.4794096

Loudon, R. (1964). The Raman effect in crystals. Advances in Physics, 13(52), 423-482. doi:10.1080/00018736400101051

Alonso-Gutiérrez, P., & Sanjuán, M. L. (2008). Ordinary and extraordinary phonons and photons: Raman study of anisotropy effects in the polar modes ofMnGa2Se4. Physical Review B, 78(4). doi:10.1103/physrevb.78.045212

[-]

recommendations

 

Este ítem aparece en la(s) siguiente(s) colección(ones)

Mostrar el registro completo del ítem