- -

Order-disorder processes in adamantine ternary ordered-vacancy compounds

RiuNet: Repositorio Institucional de la Universidad Politécnica de Valencia

Compartir/Enviar a

Citas

Estadísticas

  • Estadisticas de Uso

Order-disorder processes in adamantine ternary ordered-vacancy compounds

Mostrar el registro sencillo del ítem

Ficheros en el ítem

dc.contributor.author Manjón Herrera, Francisco Javier es_ES
dc.contributor.author Gomis Hilario, Oscar es_ES
dc.contributor.author Vilaplana Cerda, Rosario Isabel es_ES
dc.contributor.author Sans Tresserras, Juan Ángel es_ES
dc.contributor.author Ortiz, H. M. es_ES
dc.date.accessioned 2015-05-29T11:51:27Z
dc.date.issued 2013-08
dc.identifier.issn 0370-1972
dc.identifier.uri http://hdl.handle.net/10251/50977
dc.description.abstract Adamantine ternary ordered-vacancy compounds (OVCs) of the AB(2)X(4) family derive from the zincblende structure of binary AX compounds and share many properties with the chalcopyrite-type ternary ABX(2) compounds. AB(2)X(4) mainly crystallize in the defect chalcopyrite (or thiogallate) structure but also in other vacancy-ordered phases, like the defect stannite (DS, or defect famatinite) and the pseudocubic (PC) structures, where vacancies occupy a fixed Wyckoff site in an ordered and stoichiometric fashion. Order-disorder phase transitions have been studied in several adamantine OVCs at high temperatures and/or pressures, where OVCs undergo a phase transition to a disordered zincblende (DZ) structure on increasing temperature and to a disordered rocksalt (DR) structure on increasing pressure. It has been suggested that these order-disorder transitions should undergo via intermediate phases of partial disorder between the fully ordered phases and the fully disordered phases. In this work we study the different possible intermediate phases of partial disorder and discuss the possibility to find them with the help of vibrational spectroscopies, like Raman scattering or infrared measurements. es_ES
dc.description.sponsorship This study was supported by the Spanish government MEC under Grants No: MAT2010-21270-C04-04, by MALTA Consolider Ingenio 2010 project (CSD2007-00045), and by the Vicerrectorado de Investigacion y Desarrollo of the Universitat Politecnica de Valencia (UPV2011-0914 PAID-05-11 and UPV2011-0966 PAID-06-11). J. A. S. acknowledges financial support by the Juan de la Cierva fellowship program. en_EN
dc.language Inglés es_ES
dc.publisher Wiley-VCH Verlag es_ES
dc.relation.ispartof physica status solidi (b) es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject Defect calcopyrite es_ES
dc.subject High pressure es_ES
dc.subject High temperature es_ES
dc.subject Order-disorder transitions es_ES
dc.subject Ordered-vacancy compounds es_ES
dc.subject Thiogallate es_ES
dc.subject.classification FISICA APLICADA es_ES
dc.title Order-disorder processes in adamantine ternary ordered-vacancy compounds es_ES
dc.type Artículo es_ES
dc.embargo.lift 10000-01-01
dc.embargo.terms forever es_ES
dc.identifier.doi 10.1002/pssb.201248596
dc.relation.projectID info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-04/ES/CRECIMIENTO Y CARACTERIZACION DE NANOESTRUCTURAS DE OXIDOS METALICOS BAJO ALTAS PRESIONES/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/UPV//PAID-05-11-UPV2011-0914/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MEC//CSD2007-00045/ES/MATERIA A ALTA PRESION/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/UPV//PAID-06-11-UPV2011-0966/ es_ES
dc.rights.accessRights Cerrado es_ES
dc.contributor.affiliation Universitat Politècnica de València. Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica - Centre de Tecnologies Físiques: Acústica, Materials i Astrofísica es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto de Diseño para la Fabricación y Producción Automatizada - Institut de Disseny per a la Fabricació i Producció Automatitzada es_ES
dc.description.bibliographicCitation Manjón Herrera, FJ.; Gomis Hilario, O.; Vilaplana Cerda, RI.; Sans Tresserras, JÁ.; Ortiz, HM. (2013). Order-disorder processes in adamantine ternary ordered-vacancy compounds. physica status solidi (b). 250(8):1496-1504. https://doi.org/10.1002/pssb.201248596 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http://dx.doi.org/10.1002/pssb.201248596 es_ES
dc.description.upvformatpinicio 1496 es_ES
dc.description.upvformatpfin 1504 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 250 es_ES
dc.description.issue 8 es_ES
dc.relation.senia 233729
dc.identifier.eissn 1521-3951
dc.contributor.funder Ministerio de Educación y Ciencia es_ES
dc.contributor.funder Ministerio de Ciencia e Innovación es_ES
dc.contributor.funder Universitat Politècnica de València es_ES
dc.description.references Bernard, J. E., & Zunger, A. (1988). Ordered-vacancy-compound semiconductors: PseudocubicCdIn2Se4. Physical Review B, 37(12), 6835-6856. doi:10.1103/physrevb.37.6835 es_ES
dc.description.references Jiang, X., & Lambrecht, W. R. L. (2004). Electronic band structure of ordered vacancy defect chalcopyrite compounds with formulaII−III2−VI4. Physical Review B, 69(3). doi:10.1103/physrevb.69.035201 es_ES
dc.description.references Garbato, L., Ledda, F., & Rucci, A. (1987). Structural distortions and polymorphic behaviour in ABC2 and AB2C4 tetrahedral compounds. Progress in Crystal Growth and Characterization, 15(1), 1-41. doi:10.1016/0146-3535(87)90008-6 es_ES
dc.description.references Razzetti, C., Lottici, P. P., & Antonioli, G. (1987). Structure and lattice dynamics of nonmagnetic defective AIIBIII2XIV4 compounds and alloys. Progress in Crystal Growth and Characterization, 15(1), 43-73. doi:10.1016/0146-3535(87)90009-8 es_ES
dc.description.references Alonso-Gutiérrez, P., Sanjuán, M. L., & Morón, M. C. (2009). Thermally activated cation ordering in Zn0.5Mn0.5Ga2Se4single crystals studied by Raman scattering. physica status solidi (c), 6(5), 1182-1186. doi:10.1002/pssc.200881218 es_ES
dc.description.references Caldera, D., Morocoima, M., Quintero, M., Rincon, C., Casanova, R., & Grima, P. (2011). On the crystal structure of the defective ternary compound. Solid State Communications, 151(3), 212-215. doi:10.1016/j.ssc.2010.11.031 es_ES
dc.description.references Range, K.-J., Becker, W., & Weiss, A. (1969). Eine Hochdruckphase des ZnIn2S4 mit Spinellstruktur. Zeitschrift für Naturforschung B, 24(7), 811-812. doi:10.1515/znb-1969-0703 es_ES
dc.description.references Range, K.-J., Becker, W., & Weiss, A. (1969). Notizen: Das Verhalten von CdIn2Se4 bei hohen Drucken. Zeitschrift für Naturforschung B, 24(12), 1654-1655. doi:10.1515/znb-1969-1233 es_ES
dc.description.references Burlakov, I. I., Raptis, Y., Ursaki, V. V., Anastassakis, E., & Tiginyanu, I. M. (1997). Order-disorder phase transition in CdAl2S4 under hydrostatic pressure. Solid State Communications, 101(5), 377-381. doi:10.1016/s0038-1098(96)00602-3 es_ES
dc.description.references Ursaki, V. V., Burlakov, I. I., Tiginyanu, I. M., Raptis, Y. S., Anastassakis, E., & Anedda, A. (1999). Phase transitions in defect chalcopyrite compounds under hydrostatic pressure. Physical Review B, 59(1), 257-268. doi:10.1103/physrevb.59.257 es_ES
dc.description.references Grzechnik, A., Ursaki, V. V., Syassen, K., Loa, I., Tiginyanu, I. M., & Hanfland, M. (2001). Pressure-Induced Phase Transitions in Cadmium Thiogallate CdGa2Se4. Journal of Solid State Chemistry, 160(1), 205-211. doi:10.1006/jssc.2001.9224 es_ES
dc.description.references Allakhverdiev, K., Gashimzade, F., Kerimova, T., Mitani, T., Naitou, T., Matsuishi, K., & Onari, S. (2003). Raman scattering under pressure in ZnGa2Se4. Journal of Physics and Chemistry of Solids, 64(9-10), 1597-1601. doi:10.1016/s0022-3697(03)00077-5 es_ES
dc.description.references Meenakshi, S., Vijyakumar, V., Godwal, B. K., Eifler, A., Orgzall, I., Tkachev, S., & Hochheimer, H. D. (2006). High pressure X-ray diffraction study of CdAl2Se4 and Raman study of AAl2Se4 (A=Hg, Zn) and CdAl2X4 (X=Se, S). Journal of Physics and Chemistry of Solids, 67(8), 1660-1667. doi:10.1016/j.jpcs.2006.02.015 es_ES
dc.description.references Marquina, J., Power, C., Grima, P., Morocoima, M., Quintero, M., Couzinet, B., … González, J. (2006). Crystallographic properties of the MnGa2Se4 compound under high pressure. Journal of Applied Physics, 100(9), 093513. doi:10.1063/1.2358826 es_ES
dc.description.references Errandonea, D., Kumar, R. S., Manjón, F. J., Ursaki, V. V., & Tiginyanu, I. M. (2008). High-pressure x-ray diffraction study on the structure and phase transitions of the defect-stannite ZnGa2Se4 and defect-chalcopyrite CdGa2S4. Journal of Applied Physics, 104(6), 063524. doi:10.1063/1.2981089 es_ES
dc.description.references Meenakshi, S., Vijayakumar, V., Eifler, A., & Hochheimer, H. D. (2010). Pressure-induced phase transition in defect Chalcopyrites HgAl2Se4 and CdAl2S4. Journal of Physics and Chemistry of Solids, 71(5), 832-835. doi:10.1016/j.jpcs.2010.02.007 es_ES
dc.description.references Gomis, O., Vilaplana, R., Manjón, F. J., Pérez-González, E., López-Solano, J., Rodríguez-Hernández, P., … Ursaki, V. V. (2012). High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds. Journal of Applied Physics, 111(1), 013518. doi:10.1063/1.3675162 es_ES
dc.description.references Gastaldi, L., Simeone, M. G., & Viticoli, S. (1985). Cation ordering and crystal structures in AGa2X4 compounds (CoGa2S4, CdGa2S4, CdGa2Se4, HgGa2Se4, HgGa2Te4). Solid State Communications, 55(7), 605-607. doi:10.1016/0038-1098(85)90821-x es_ES
dc.description.references Binsma, J. J. M., Giling, L. J., & Bloem, J. (1981). Order—disorder behaviour and tetragonal distortion of chalcopyrite compounds. Physica Status Solidi (a), 63(2), 595-603. doi:10.1002/pssa.2210630226 es_ES
dc.description.references Zunger, A. (1987). Order‐disorder transformation in ternary tetrahedral semiconductors. Applied Physics Letters, 50(3), 164-166. doi:10.1063/1.97649 es_ES
dc.description.references Rinco´n, C. (1992). Order-disorder transition in ternary chalcopyrite compounds and pseudobinary alloys. Physical Review B, 45(22), 12716-12719. doi:10.1103/physrevb.45.12716 es_ES
dc.description.references Lowe-Ma, C. K., & Vanderah, T. A. (1991). Structure of ZnGa2S4, a defect sphalerite derivative. Acta Crystallographica Section C Crystal Structure Communications, 47(5), 919-924. doi:10.1107/s0108270190011192 es_ES
dc.description.references Eifler, A., Hecht, J.-D., Lippold, G., Riede, V., Grill, W., Krauß, G., & Krämer, V. (1999). Combined infrared and Raman study of the optical phonons of defect chalcopyrite single crystals. Physica B: Condensed Matter, 263-264, 806-808. doi:10.1016/s0921-4526(98)01292-7 es_ES
dc.description.references Eifler, A., Krauss, G., Riede, V., Krämer, V., & Grill, W. (2005). Optical phonon modes and structure of ZnGa2Se4 and ZnGa2S4. Journal of Physics and Chemistry of Solids, 66(11), 2052-2057. doi:10.1016/j.jpcs.2005.09.049 es_ES
dc.description.references Carpenter, G. B., Wu, P., Gao, Y.-M., & Wold, A. (1989). Redetermination of crystal structure of zinc thiogallate. Materials Research Bulletin, 24(9), 1077-1082. doi:10.1016/0025-5408(89)90064-0 es_ES
dc.description.references Schwer, H., & Krämer, V. (1990). The crystal structures of CdAl2S4, HgAl2S4, and HgGa2S4. Zeitschrift für Kristallographie, 190(1-2), 103-110. doi:10.1524/zkri.1990.190.1-2.103 es_ES
dc.description.references Haeuseler, H. (1978). FIR- und Ramanspektren von ternären Chalkogeniden des Galliums und Indiums mit Zink, Cadmium und Quecksilber. Journal of Solid State Chemistry, 26(4), 367-376. doi:10.1016/0022-4596(78)90171-8 es_ES
dc.description.references Bacewicz, R., Lottici, P. P., & Razzetti, C. (1979). Raman scattering of the ordered-vacancy compound CdGa2Se4. Journal of Physics C: Solid State Physics, 12(17), 3603-3614. doi:10.1088/0022-3719/12/17/030 es_ES
dc.description.references Razzetti, C., Lottici, P. P., & Bacewicz, R. (1982). Oblique phonon Raman scattering in CdGa2Se4. Journal of Physics C: Solid State Physics, 15(27), 5657-5665. doi:10.1088/0022-3719/15/27/022 es_ES
dc.description.references Lottici, P. P., & Razzetti, C. (1983). A comparison of the raman spectra of ZnGa2Se4 and other gallium defect chalcopyrites. Solid State Communications, 46(9), 681-684. doi:10.1016/0038-1098(83)90506-9 es_ES
dc.description.references Haeuseler, H., Wäschenbach, G., & Lutz, H. D. (1985). Directional Dispersion of the Phonon Modes in Optically Uniaxial Solids, Far-Infrared Reflection Spectra, Dielectric and Optic Constants, Dynamic Effective Ionic Charges of the Defect Chalcopyrites CdGa2S4, CdGa2Se4, HgGa2S4, and HgGa2Se4. physica status solidi (b), 129(2), 549-558. doi:10.1002/pssb.2221290212 es_ES
dc.description.references Attolini, G., Bini, S., Lottici, P. P., & Razzetti, C. (1992). Effects of Group III Cation Substitution in the Raman Spectra of Some Defective Chalcopyrites. Crystal Research and Technology, 27(5), 685-690. doi:10.1002/crat.2170270519 es_ES
dc.description.references Takahashi, Y., Namatsu, H., Machida, K., & Minegishi, K. (1993). Measurements of Diffusion Coefficiens of Water in Electron Cryclotron Resonance Plasma SiO2. Japanese Journal of Applied Physics, 32(Part 2, No. 3B), L431-L433. doi:10.1143/jjap.32.l431 es_ES
dc.description.references Eifler, A., Hecht, J.-D., Riede, V., Lippold, G., Schmitz, W., Krauß, G., … Grill, W. (1999). Infrared and Raman study of lattice vibrations of CdAl2Se4and CdAl2S4single crystals. Journal of Physics: Condensed Matter, 11(25), 4821-4832. doi:10.1088/0953-8984/11/25/303 es_ES
dc.description.references Kroumova, E., Aroyo, M. I., Perez-Mato, J. M., Kirov, A., Capillas, C., Ivantchev, S., & Wondratschek, H. (2003). Bilbao Crystallographic Server : Useful Databases and Tools for Phase-Transition Studies. Phase Transitions, 76(1-2), 155-170. doi:10.1080/0141159031000076110 es_ES
dc.description.references Manjón, F. J., Marí, B., Serrano, J., & Romero, A. H. (2005). Silent Raman modes in zinc oxide and related nitrides. Journal of Applied Physics, 97(5), 053516. doi:10.1063/1.1856222 es_ES
dc.description.references Vilaplana, R., Robledillo, M., Gomis, O., Sans, J. A., Manjón, F. J., Pérez-González, E., … Ursaki, V. V. (2013). Vibrational study of HgGa2S4under high pressure. Journal of Applied Physics, 113(9), 093512. doi:10.1063/1.4794096 es_ES
dc.description.references Loudon, R. (1964). The Raman effect in crystals. Advances in Physics, 13(52), 423-482. doi:10.1080/00018736400101051 es_ES
dc.description.references Alonso-Gutiérrez, P., & Sanjuán, M. L. (2008). Ordinary and extraordinary phonons and photons: Raman study of anisotropy effects in the polar modes ofMnGa2Se4. Physical Review B, 78(4). doi:10.1103/physrevb.78.045212 es_ES


Este ítem aparece en la(s) siguiente(s) colección(ones)

Mostrar el registro sencillo del ítem