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Implementation and evaluation of the Level Set method: towards efficient and accurate simulation of wet etching for microengineering applications

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Implementation and evaluation of the Level Set method: towards efficient and accurate simulation of wet etching for microengineering applications

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dc.contributor.author Montoliu Álvaro, Carles es_ES
dc.contributor.author Ferrando Jódar, Néstor es_ES
dc.contributor.author Gosalvez, Miguel Ángel es_ES
dc.contributor.author Cerdá Boluda, Joaquín es_ES
dc.contributor.author Colom Palero, Ricardo José es_ES
dc.date.accessioned 2015-07-14T10:21:00Z
dc.date.available 2015-07-14T10:21:00Z
dc.date.issued 2013-10
dc.identifier.issn 0010-4655
dc.identifier.uri http://hdl.handle.net/10251/53148
dc.description.abstract The use of atomistic methods, such as the Continuous Cellular Automaton (CCA), is currently regarded as a computationally efficient and experimentally accurate approach for the simulation of anisotropic etching of various substrates in the manufacture of Micro-electro-mechanical Systems (MEMS). However, when the features of the chemical process are modified, a time-consuming calibration process needs to be used to transform the new macroscopic etch rates into a corresponding set of atomistic rates. Furthermore, changing the substrate requires a labor-intensive effort to reclassify most atomistic neighborhoods. In this context, the Level Set (LS) method provides an alternative approach where the macroscopic forces affecting the front evolution are directly applied at the discrete level, thus avoiding the need for reclassification and/or calibration. Correspondingly, we present a fully-operational Sparse Field Method (SFM) implementation of the LS approach, discussing in detail the algorithm and providing a thorough characterization of the computational cost and simulation accuracy, including a comparison to the performance by the most recent CCA model. We conclude that the SFM implementation achieves similar accuracy as the CCA method with less fluctuations in the etch front and requiring roughly 4 times less memory. Although SFM can be up to 2 times slower than CCA for the simulation of anisotropic etchants, it can also be up to 10 times faster than CCA for isotropic etchants. In addition, we present a parallel, GPU-based implementation (gSFM) and compare it to an optimized, multicore CPU version (cSFM), demonstrating that the SFM algorithm can be successfully parallelized and the simulation times consequently reduced, while keeping the accuracy of the simulations. Although modern multicore CPUs provide an acceptable option, the massively parallel architecture of modern GPUs is more suitable, as reflected by computational times for gSFM up to 7.4 times faster than for cSFM. (c) 2013 Elsevier B.V. All rights reserved. es_ES
dc.description.sponsorship We thank the anonymous reviewers for their valuable comments and suggestions. This work has been supported by the Spanish FPI-MICINN BES-2011-045940 grant and the Ramon y Cajal Fellowship Program by the Spanish Ministry of Science and Innovation. Also, we acknowledge support by the JAE-Doc grant from the Junta para la Ampliacion de Estudios program co-funded by FSE and the Professor Partnership Program by NVIDIA Corporation. en_EN
dc.language Inglés es_ES
dc.publisher Elsevier es_ES
dc.relation.ispartof Computer Physics Communications es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject Level Set method es_ES
dc.subject Sparse Field Method es_ES
dc.subject Anisotropic wet chemical etching es_ES
dc.subject Microengineering es_ES
dc.subject Cellular Automata es_ES
dc.subject MEMS es_ES
dc.subject Parallel computing es_ES
dc.subject GPU es_ES
dc.subject.classification TECNOLOGIA ELECTRONICA es_ES
dc.title Implementation and evaluation of the Level Set method: towards efficient and accurate simulation of wet etching for microengineering applications es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1016/j.cpc.2013.05.016
dc.relation.projectID info:eu-repo/grantAgreement/MICINN//BES-2011-045940/ES/BES-2011-045940/ es_ES
dc.rights.accessRights Abierto es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto de Instrumentación para Imagen Molecular - Institut d'Instrumentació per a Imatge Molecular es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Ingeniería Electrónica - Departament d'Enginyeria Electrònica es_ES
dc.description.bibliographicCitation Montoliu Álvaro, C.; Ferrando Jódar, N.; Gosalvez, MÁ.; Cerdá Boluda, J.; Colom Palero, RJ. (2013). Implementation and evaluation of the Level Set method: towards efficient and accurate simulation of wet etching for microengineering applications. Computer Physics Communications. 184(10):2299-2309. https://doi.org/10.1016/j.cpc.2013.05.016 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http://dx.doi.org/10.1016/j.cpc.2013.05.016 es_ES
dc.description.upvformatpinicio 2299 es_ES
dc.description.upvformatpfin 2309 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 184 es_ES
dc.description.issue 10 es_ES
dc.relation.senia 256960
dc.identifier.eissn 1879-2944
dc.contributor.funder Ministerio de Ciencia e Innovación es_ES
dc.contributor.funder European Social Fund es_ES
dc.contributor.funder Consejo Superior de Investigaciones Científicas es_ES
dc.contributor.funder NVIDIA es_ES


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