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Theoretical study about the gain in indirect bandgap semiconductor optical cavities

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Theoretical study about the gain in indirect bandgap semiconductor optical cavities

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Escalante Fernández, JM.; Martínez Abietar, AJ. (2012). Theoretical study about the gain in indirect bandgap semiconductor optical cavities. Physica B: Condensed Matter. 407(12):2044-2049. doi:10.1016/j.physb.2012.02.002

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Title: Theoretical study about the gain in indirect bandgap semiconductor optical cavities
Author:
UPV Unit: Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica
Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions
Issued date:
Abstract:
[EN] Indirect bandgap semiconductors such as silicon are not efficient light emitters because a phonon with a high momentum is required to transfer an electron from the conduction to the valence band. In a recent study ...[+]
Subjects: Co-stimulated emission , Indirect bandgap semiconductor , Optical gain , Phonon , Photons , Silicon , Analytical expressions , Band-gap semiconductors , Free carrier absorption , Free carriers , Light emitters , Optical cavities , Purcell factor , Theoretical study , Energy gap , Phonons , Semiconducting silicon
Copyrigths: Reconocimiento - No comercial - Sin obra derivada (by-nc-nd)
Source:
Physica B: Condensed Matter. (issn: 0921-4526 ) (eissn: 1873-2135 )
DOI: 10.1016/j.physb.2012.02.002
Publisher:
Elsevier
Publisher version: http://dx.doi.org/10.1016/j.physb.2012.02.002
Project ID: info:eu-repo/grantAgreement/EC/FP7/233883
Thanks:
This research has received funding from the European Community's Seventh Framework Programme (FP7/2007-2013) under grant agreement number 233883 (TAILPHOX). The authors wish to thank M.J. Chen for his useful comments.
Type: Artículo

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