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dc.contributor.author | Escalante Fernández, José María | es_ES |
dc.contributor.author | Martínez Abietar, Alejandro José | es_ES |
dc.date.accessioned | 2015-11-11T11:10:07Z | |
dc.date.available | 2015-11-11T11:10:07Z | |
dc.date.issued | 2012-06-15 | |
dc.identifier.issn | 0921-4526 | |
dc.identifier.uri | http://hdl.handle.net/10251/57332 | |
dc.description.abstract | [EN] Indirect bandgap semiconductors such as silicon are not efficient light emitters because a phonon with a high momentum is required to transfer an electron from the conduction to the valence band. In a recent study (M.J. Chen et al., 2006) [6] an analytical expression of the optical gain in bulk indirect bandgap semiconductors was obtained. The main conclusion was that the free-carrier absorption was much higher than the optical gain at ambient temperature, which prevents lasing. In this work, we consider the case in which the semiconductor material is engineered to form an optical cavity characterized by a certain Purcell factor. We conclude that although the optical gain is increased, losses due to free carriers increase in the same way so lasing is also prevented even when creating a high-Q optical cavity. © 2012 Elsevier B.V. All rights reserved. | es_ES |
dc.description.sponsorship | This research has received funding from the European Community's Seventh Framework Programme (FP7/2007-2013) under grant agreement number 233883 (TAILPHOX). The authors wish to thank M.J. Chen for his useful comments. | en_EN |
dc.language | Inglés | es_ES |
dc.publisher | Elsevier | es_ES |
dc.relation.ispartof | Physica B: Condensed Matter | es_ES |
dc.rights | Reconocimiento - No comercial - Sin obra derivada (by-nc-nd) | es_ES |
dc.subject | Co-stimulated emission | es_ES |
dc.subject | Indirect bandgap semiconductor | es_ES |
dc.subject | Optical gain | es_ES |
dc.subject | Phonon | es_ES |
dc.subject | Photons | es_ES |
dc.subject | Silicon | es_ES |
dc.subject | Analytical expressions | es_ES |
dc.subject | Band-gap semiconductors | es_ES |
dc.subject | Free carrier absorption | es_ES |
dc.subject | Free carriers | es_ES |
dc.subject | Light emitters | es_ES |
dc.subject | Optical cavities | es_ES |
dc.subject | Purcell factor | es_ES |
dc.subject | Theoretical study | es_ES |
dc.subject | Energy gap | es_ES |
dc.subject | Phonons | es_ES |
dc.subject | Semiconducting silicon | es_ES |
dc.subject.classification | TEORIA DE LA SEÑAL Y COMUNICACIONES | es_ES |
dc.title | Theoretical study about the gain in indirect bandgap semiconductor optical cavities | es_ES |
dc.type | Artículo | es_ES |
dc.identifier.doi | 10.1016/j.physb.2012.02.002 | |
dc.relation.projectID | info:eu-repo/grantAgreement/EC/FP7/233883/EU/TAILoring photon-phonon interaction in silicon PHOXonic crystals/ | es_ES |
dc.rights.accessRights | Abierto | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions | es_ES |
dc.description.bibliographicCitation | Escalante Fernández, JM.; Martínez Abietar, AJ. (2012). Theoretical study about the gain in indirect bandgap semiconductor optical cavities. Physica B: Condensed Matter. 407(12):2044-2049. https://doi.org/10.1016/j.physb.2012.02.002 | es_ES |
dc.description.accrualMethod | S | es_ES |
dc.relation.publisherversion | http://dx.doi.org/10.1016/j.physb.2012.02.002 | es_ES |
dc.description.upvformatpinicio | 2044 | es_ES |
dc.description.upvformatpfin | 2049 | es_ES |
dc.type.version | info:eu-repo/semantics/publishedVersion | es_ES |
dc.description.volume | 407 | es_ES |
dc.description.issue | 12 | es_ES |
dc.relation.senia | 227842 | es_ES |
dc.identifier.eissn | 1873-2135 | |
dc.contributor.funder | European Commission |