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p-n Heterojunction of Doped Graphene Films Obtained by Pyrolysis of Biomass Precursors

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p-n Heterojunction of Doped Graphene Films Obtained by Pyrolysis of Biomass Precursors

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Latorre Sánchez, M.; Primo Arnau, AM.; Atienzar Corvillo, PE.; Forneli Rubio, MA.; García Gómez, H. (2015). p-n Heterojunction of Doped Graphene Films Obtained by Pyrolysis of Biomass Precursors. Small. 11(8):970-975. doi:10.1002/smll.201402278

Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/64120

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Title: p-n Heterojunction of Doped Graphene Films Obtained by Pyrolysis of Biomass Precursors
Author:
UPV Unit: Universitat Politècnica de València. Instituto Universitario Mixto de Tecnología Química - Institut Universitari Mixt de Tecnologia Química
Universitat Politècnica de València. Departamento de Química - Departament de Química
Issued date:
Abstract:
Nitrogen-doped graphene [(N)G] obtained by pyrolysis at 900 degrees C of nanometric chitosan films exhibits a Hall effect characteristic of n-type semiconductors. In contrast, boron-doped graphene [(B)G] obtained by pyrolysis ...[+]
Subjects: HYDROGEN GENERATION , PHOTOCATALYST , SILICON , OXIDE , CARBOCATALYST , OXIDATION
Copyrigths: Cerrado
Source:
Small. (issn: 1613-6810 ) (eissn: 1613-6829 )
DOI: 10.1002/smll.201402278
Publisher:
Wiley-VCH Verlag
Publisher version: http://dx.doi.org/10.1002/smll.201402278
Thanks:
Financial Support by the Spanish Ministry of Economy and Competitiveness (Severo Ochoa and CTQ2012-32315) is gratefully acknowledged. MLS and PA thank also to the Spanish Ministry and the National Research Council for a ...[+]
Type: Artículo

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