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Influence of BaTiO3 ferroelectric orientation for electro-optic modulation on silicon

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Influence of BaTiO3 ferroelectric orientation for electro-optic modulation on silicon

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dc.contributor.author Castera Molada, Pau es_ES
dc.contributor.author Tulli, Domenico es_ES
dc.contributor.author Gutiérrez Campo, Ana María es_ES
dc.contributor.author Sanchis Kilders, Pablo es_ES
dc.date.accessioned 2016-06-03T10:56:23Z
dc.date.available 2016-06-03T10:56:23Z
dc.date.issued 2015-06-15
dc.identifier.issn 1094-4087
dc.identifier.uri http://hdl.handle.net/10251/65201
dc.description © 2015 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited es_ES
dc.description.abstract [EN] The influence of BaTiO3 ferroelectric domain orientations for high efficiency electro-optic modulation has been thoroughly analyzed. The Mach-Zehnder modulator structure is based on a CMOS compatible silicon/BaTiO3/silicon slot waveguide that supports both TE and TM polarizations whereas the Pockels effect is exploited by the application of a horizontal electric field with lateral electrodes placed on top of the BaTiO3 layer. The influence of the waveguide parameters has been optimized for each configuration and the lowest Vπ voltage combined with low losses has been determined. A VπL as low as 0.27 V·cm has been obtained for a-axis oriented BaTiO3 and TE polarization by rotating the waveguide structure to an optimum angle. es_ES
dc.description.sponsorship This work was supported by the European Commission under project FP7-ICT-2013-11-619456 SITOGA. Financial support from TEC2012-38540 LEOMIS is also acknowledged. We also acknowledge Stefan Abel and Sebastien Cueff for their helpful comments. en_EN
dc.language Inglés es_ES
dc.publisher Optical Society of America: Open Access Journals es_ES
dc.relation MINECO/TEC2012-38540 es_ES
dc.relation.ispartof Optics Express es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject Waveguide modulators es_ES
dc.subject Modulators es_ES
dc.subject Electrooptical devices es_ES
dc.subject Ferroelectrics es_ES
dc.subject.classification TEORIA DE LA SEÑAL Y COMUNICACIONES es_ES
dc.title Influence of BaTiO3 ferroelectric orientation for electro-optic modulation on silicon es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1364/OE.23.015332
dc.relation.projectID info:eu-repo/grantAgreement/EC/FP7/619456 SITOGA es_ES
dc.rights.accessRights Cerrado es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions es_ES
dc.description.bibliographicCitation Castera Molada, P.; Tulli, D.; Gutierrez Campo, AM.; Sanchis Kilders, P. (2015). Influence of BaTiO3 ferroelectric orientation for electro-optic modulation on silicon. Optics Express. 23(12):15332-15342. doi:10.1364/OE.23.015332 es_ES
dc.description.accrualMethod Senia es_ES
dc.relation.publisherversion http://dx.doi.org/10.1364/OE.23.015332 es_ES
dc.description.upvformatpinicio 15332 es_ES
dc.description.upvformatpfin 15342 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 23 es_ES
dc.description.issue 12 es_ES
dc.relation.senia 291013 es_ES
dc.contributor.funder European Commission
dc.contributor.funder Ministerio de Economía y Competitividad (MINECO)
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