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Dielectric Relaxation Processes, Electronic Structure and Band Gap Engineering of MFU-4-type Metal-Organic Frameworks: Towards a Rational Design of Semiconducting Microporous Materials

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Dielectric Relaxation Processes, Electronic Structure and Band Gap Engineering of MFU-4-type Metal-Organic Frameworks: Towards a Rational Design of Semiconducting Microporous Materials

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Sippel, P.; Denysenko, D.; Loidl, A.; Lunkenheimer, P.; Sastre Navarro, GI.; Volkmer, D. (2014). Dielectric Relaxation Processes, Electronic Structure and Band Gap Engineering of MFU-4-type Metal-Organic Frameworks: Towards a Rational Design of Semiconducting Microporous Materials. Advanced Functional Materials. 24(25):3885-3896. doi:10.1002/adfm.201400083

Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/68255

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Title: Dielectric Relaxation Processes, Electronic Structure and Band Gap Engineering of MFU-4-type Metal-Organic Frameworks: Towards a Rational Design of Semiconducting Microporous Materials
Author: Sippel, P. Denysenko, D. Loidl, A. Lunkenheimer, P. Sastre Navarro, German Ignacio Volkmer, Dirk
UPV Unit: Universitat Politècnica de València. Instituto Universitario Mixto de Tecnología Química - Institut Universitari Mixt de Tecnologia Química
Issued date:
Abstract:
The electronic structures and band gaps of MFU-4-type metal-organic frameworks can be systematically engineered leading to a family of isostructural microporous solids. Electrical properties of the microcrystalline samples ...[+]
Copyrigths: Cerrado
Source:
Advanced Functional Materials. (issn: 1616-301X )
DOI: 10.1002/adfm.201400083
Publisher:
Wiley
Publisher version: http://dx.doi.org/10.1002/adfm.201400083
Project ID:
DFG SPP 1362
BMBF via ENREKON
Spanish government SEV 2012-0267
Thanks:
Financial Support by the DFG (Priority Program SPP 1362 "Porous Metal-organic Frameworks") is gratefully acknowledged. This work was partly supported by the BMBF via ENREKON. Sastre thanks the Spanish government for the ...[+]
Type: Artículo

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