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Electrochemical Fabrication and Characterization of p-CuSCn/n-ZnO Heterojunction Devices

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Electrochemical Fabrication and Characterization of p-CuSCn/n-ZnO Heterojunction Devices

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Nombre: Marí;K.C. SINGH;Ortiz ...
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dc.contributor.author Marí Soucase, Bernabé es_ES
dc.contributor.author Singh, Krishan Chander es_ES
dc.contributor.author Ortiz Moya, Laura es_ES
dc.contributor.author Mollar García, Miguel Alfonso es_ES
dc.date.accessioned 2016-07-29T08:34:42Z
dc.date.available 2016-07-29T08:34:42Z
dc.date.issued 2013-03
dc.identifier.issn 1432-8488
dc.identifier.uri http://hdl.handle.net/10251/68420
dc.description.abstract [EN] p-CuSCN/n-ZnO heterojunction devices were prepared by depositing CuSCN electrochemically over a ZnO film previously deposited. The compact and smooth surface films of n-ZnO on FTO substrate were deposited electrochemically from a nonaqueous bath. The CuSCN films were characterized by cyclic voltammetry, chronoamperometry, SEM, energy-dispersive X-ray spectroscopy, and XRD measurements. The pure crystalline films of CuSCN with intrinsic trigonal pyramidal morphology over the ZnO films were obtained electrochemically by fixing the SCN/Cu ratio in the electrolytic bath 1.5:1 at 60 °C with −0.4 V deposition potential. Photocurrent measurements showed the increase of intrinsic surface states or defects in ZnO/CuSCN interface. The I V characteristic of p-CuSCN/n-ZnO heterojunctions shows good rectification behavior with a rectification ratio of 250 at ±2 V. The value of 2.81 of the ideality factor calculated by fitting the semilogarithmic I V data with the ideal diode equation revealed the better electrical contact between the smooth ZnO and CuSCN films than that of ZnO nano-rods and CuSCN crystallites. es_ES
dc.description.sponsorship This work was supported by the Spanish Government through MCINN grant MAT2009-14625-C03-03 and European Commission through NanoCIS project FP7-PEOPLE-2010-IRSES (ref. 269279). K.C. Singh acknowledges MEC for the financial support (SAB2010-0019). en_EN
dc.language Inglés es_ES
dc.publisher Springer Verlag (Germany) es_ES
dc.relation.ispartof Journal of Solid State Electrochemistry es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject ZnO/CuSCN interface es_ES
dc.subject Electrochemical deposition es_ES
dc.subject Heterojunction es_ES
dc.subject Rectification es_ES
dc.subject I–V curve es_ES
dc.subject.classification FISICA APLICADA es_ES
dc.title Electrochemical Fabrication and Characterization of p-CuSCn/n-ZnO Heterojunction Devices es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1007/s10008-012-1913-2
dc.relation.projectID info:eu-repo/grantAgreement/MICINN//MAT2009-14625-C03-03/ES/Diseño, Sintesis Y Caracterizacion De Materiales Fotovoltaicos Avanzados De Alta Eficiencia/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/EC/FP7/269279/EU/Development of a new generation of CIGS-based solar cells/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/ME//SAB2010-0019/ES/SAB2010-0019/ es_ES
dc.rights.accessRights Cerrado es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto de Diseño para la Fabricación y Producción Automatizada - Institut de Disseny per a la Fabricació i Producció Automatitzada es_ES
dc.description.bibliographicCitation Marí Soucase, B.; Singh, KC.; Ortiz Moya, L.; Mollar García, MA. (2013). Electrochemical Fabrication and Characterization of p-CuSCn/n-ZnO Heterojunction Devices. Journal of Solid State Electrochemistry. 17(3):667-673. https://doi.org/10.1007/s10008-012-1913-2 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http:dx.doi.org/10.1007/s10008-012-1913-2 es_ES
dc.description.upvformatpinicio 667 es_ES
dc.description.upvformatpfin 673 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 17 es_ES
dc.description.issue 3 es_ES
dc.relation.senia 228621 es_ES
dc.identifier.eissn 1433-0768
dc.contributor.funder European Commission
dc.contributor.funder Ministerio de Ciencia e Innovación
dc.contributor.funder Ministerio de Educación es_ES
dc.description.references Fang ZQ, Claflin B, Look DC, Farlow GC (2007) J Appl Phys 101:086106–086108 es_ES
dc.description.references Chu S, Lim JH, Mandalapu LJ, Yang Z, Li L, Liu JL (2008) Appl Phys Lett 92:152103–152105 es_ES
dc.description.references Lee JY, Choi YS, Kim JH, Park MO, Im S (2002) Thin Solid Films 403:553–557 es_ES
dc.description.references Herrero J, Guillén C (2004) Thin Solid Films 451:630–633 es_ES
dc.description.references Bacaksiz E, Aksu S, Basol BM, Altunbaş M, Parlak M, Yanmaz E (2008) Thin Solid Films 516:7899–7902 es_ES
dc.description.references Pan ZW, Dai ZR, Wang ZL (2001) Science 291:1947–1949 es_ES
dc.description.references Gao P, Wang ZL (2002) J Phys Chem B 106:12653–12658 es_ES
dc.description.references Huang MH, Wu YY, Feick H, Tran N, Webber E, Yang PD (2001) Adv Mater 13:113–116 es_ES
dc.description.references Wu JJ, Liu SC, Wu CT, Chen KH, Chen LC (2002) Appl Phys Lett 81:1312–1314 es_ES
dc.description.references Hu JQ, Bando Y, Zhan JH, Li YB, Sekiguchi T (2003) Appl Phys Lett 83:4414–4416 es_ES
dc.description.references Yan HQ, He RR, Pham J, Yang PD (2003) Adv Mater 15:402–405 es_ES
dc.description.references Tang H, Zhu L, He H, Ye Z, Zhang Y, Zhi M, Yang Z, Zho B, Li T (2006) J Phys D Appl Phys 39:2696–2700 es_ES
dc.description.references Alver U, Kilinc T, Bacaksiz E, Kucukomeroglu T, Nezir S, Mutlu IH, Aslan F (2007) Thin Solid Films 515:34483451 es_ES
dc.description.references Tena-Zaera R, Ryan MA, Katty A, Hodes G, Bastide S, Lévy-Clément C (2006) C R Chimie 9:717–729 es_ES
dc.description.references O’Regan B, Schwartz DT (1995) Chem Mater 7:1349–1354 es_ES
dc.description.references Li B, Wang L, Kang B, Wang P, Qiu Y (2006) Sol Energ Mater Sol Cell 90:549–573 es_ES
dc.description.references Laurent K, Brouri T, Capo-Chichi M, Yu DP, Leprince-Wang Y (2011) J Appl Phys 110:094310 es_ES
dc.description.references O'Regan B, Lenzmann F, Muis R, Wienke J (2002) Chem Mater 14:5023–5029 es_ES
dc.description.references Kumara GRRA, Konno A, Senadeera GKR, Jayaweera PVV, De Silva DBRA, Tennakone K (2001) Sol Energ Mater Sol Cell 69:195–199 es_ES
dc.description.references Sankapal BR, Goncalves E, Ennaoui A, Lux-Steiner MC (2004) Thin Solid Films 451:128–132 es_ES
dc.description.references O’Regan B, Schwartz DT, Zakeeruddin SM, Grätzel M (2000) Adv Mater 12:1263–1267 es_ES
dc.description.references Tennakone K, Kumarasinghe AR, Sirmanne PM, Kumare GRRA (1995) Thin Solid Films 261:307–310 es_ES
dc.description.references Ni Y, Jin Z, Fu Y (2007) J Am Ceram Soc 90:2966–2973 es_ES
dc.description.references Cui H, Mollar M, Marí B (2011) Opt Mater 33:327–331 es_ES
dc.description.references Smith DL, Saunders VI (1981) Acta Crys B 37:1807–1812 es_ES
dc.description.references Tennakone K, Jayatissa AH, Fernando CAN, Wickramanayake S, Punchihewa S, Weerasena LK, Premasiri WDR (1987) Phys Stat Sol (a) 103:491–497 es_ES
dc.description.references Zang Q, Guo H, Feng Z, Lin L, Zhou J, Lin Z (2010) Electrochim Acta 55:4889–4894 es_ES
dc.description.references Smith DL, Saunders VJ (1981) Acta Crystallogr B 37:1807–1814 es_ES
dc.description.references Jaffe JE, Kaspar TC, Droubay TC, Varga T, Bowden ME, Exarhos GJ (2010) J Phys Chem C 114:9111–9117 es_ES
dc.description.references Bacaksiz E, Aksu S, Cankaya G, Yilmaz S, Polat I, Kucukomeroglu T, Varilci A (2011) Thin Solid Films 519:3679–3685 es_ES
dc.description.references Ni Y, Jin Z, Yu K, Fu Y, Liu T, Wang T (2008) Electrochim Acta 53:6048–6054 es_ES
dc.description.references Wu WB, Cui SG, Yang ChH HGD, Wu HT (2009) Electrochem Commun 11:1736–1739 es_ES
dc.description.references Ae L, Chen J, Lux-Steiner MC (2008) Nanotechnology 19:475201–475205 es_ES
dc.description.references Jeong MC, Oh BY, Ham MH, Myoung JM (2006) Appl Phys Lett 88:202105–202108 es_ES
dc.description.references Maruska HP, Namavar F, Kalkhoran NM (1992) Appl Phys Lett 61:1338–1341 es_ES


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