Samantilleke, AP.; Sahal, M.; Ortiz Moya, L.; Cerqueira, M.; Marí Soucase, B. (2011). Flexible CuInSe2 photovoltaic cells fabricated by non-vacuum techniques. Thin Solid Films. 519:7272-7275. https://doi.org/10.1016/j.tsf.2011.01.373
Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/68531
Título:
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Flexible CuInSe2 photovoltaic cells fabricated by non-vacuum techniques
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Autor:
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Samantilleke, Anura Priyajith
Sahal, Mustapha
Ortiz Moya, Laura
Cerqueira, M.F.
Marí Soucase, Bernabé
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Entidad UPV:
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Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada
Universitat Politècnica de València. Instituto de Diseño para la Fabricación y Producción Automatizada - Institut de Disseny per a la Fabricació i Producció Automatitzada
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Fecha difusión:
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Resumen:
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In this work, CuInSe 2 based flexible photovoltaic cells have been fabricated completely using non-vacuum low-cost techniques. Thin films were deposited on molybdenum thin foil substrates by electrodeposition using a ...[+]
In this work, CuInSe 2 based flexible photovoltaic cells have been fabricated completely using non-vacuum low-cost techniques. Thin films were deposited on molybdenum thin foil substrates by electrodeposition using a buffered aqueous electrolyte with the deposition of subsequent layers performed by spray pyrolysis. In addition, the buffer layer CdS was replaced with a wider bandgap ZnS (3.7 eV) and analysis undertaken of the fabrication pathway, morphological and compositional changes resulting from the different precursor route. The deposited films were annealed in a Se atmosphere at 450 °C. The influence of annealing temperature and time on the properties of the films are briefly discussed. Characterisation of thin films was performed using aqueous electrolyte contacts. Capacitance measurements were made as a function of applied bias on thin films deposited on metal substrates with blocking electrolyte contacts where analysis of the impedance gave values of the space charge capacitance from which the doping density and flat band potential were derived. The structural characterisation was carried out using X-ray diffraction and Raman spectroscopy. The structure and device properties of Mo (SS)/CuInSe 2/ZnS/n +-ZnO/Ni were characterized using current-voltage technique and photocurrent spectroscopy. © 2011 Elsevier B.V.
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Palabras clave:
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CuInSe2
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Electrodeposition
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Solar cells
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Annealing temperatures
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Applied bias
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Aqueous electrolyte
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CdS
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Characterisation
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Compositional changes
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Current voltage
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Deposited films
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Device properties
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Different precursors
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Doping densities
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Electrolyte contacts
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Flat band potential
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Metal substrate
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Non-vacuum
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Photocurrent spectroscopy
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Space charges
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Thin foil
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ZnO
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Cadmium compounds
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Cadmium sulfide
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Capacitance
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Capacitance measurement
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Copper compounds
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Deposition
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Electrolytes
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Fabrication
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Molybdenum
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Photoelectrochemical cells
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Photovoltaic cells
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Photovoltaic effects
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Raman spectroscopy
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Semiconducting selenium compounds
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Spray pyrolysis
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Thin films
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Vacuum
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Vapor deposition
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X ray diffraction
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Zinc sulfide
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Semiconductor doping
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Derechos de uso:
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Cerrado |
Fuente:
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Thin Solid Films. (issn:
0040-6090
)
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DOI:
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10.1016/j.tsf.2011.01.373
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Editorial:
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Elsevier
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Versión del editor:
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http://dx.doi.org/10.1016/j.tsf.2011.01.373
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Código del Proyecto:
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info:eu-repo/grantAgreement/MICINN//MAT2009-14625-C03-03/ES/Diseño, Sintesis Y Caracterizacion De Materiales Fotovoltaicos Avanzados De Alta Eficiencia/
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Agradecimientos:
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This work was supported by the Spanish Government through MEC grant MAT2009-14625-C03-03 and the Fundacao para a Ciencia e a Tecnologia (FCT) in Portugal.
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Tipo:
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Artículo
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