Experimental procurement of the complete 3D etch rate distribution of Si in anisotropic etchants based on vertically micromachined wagon wheel samples

Abstract

This is part I of a series of two papers dedicated to the presentation of a novel, large throughput, experimental procedure to determine the three-dimensional distribution of the etch rate of silicon in a wide range of anisotropic etchants, including a total of 30 different etching conditions in KOH, KOH+IPA, TMAH and TMAH+Triton solutions at various concentrations and temperatures. The method is based on the use of previously reported, vertically micromachined wagon wheels (WWs) (Wind and Hines 2000 Surf. Sci. 460 21-38; Nguyen and Elwenspoek 2007 J. Electrochem. Soc. 154 D684-91), focusing on speeding up the etch rate extraction process for each WW by combining macrophotography and image processing procedures. The proposed procedure positions the WWs as a realistic alternative to the traditional hemispherical specimen. The obtained, extensive etch rate database is used to perform wet etching simulations of advanced systems, showing good agreement with the experimental counterparts. In part II of this series (Gosalvez et al J. Micromech. Microeng. 21 125008), we provide a theoretical analysis of the etched spoke shapes, a detailed comparison to the etch rates from previous studies and a self-consistency study of the measured etch rates against maximum theoretical values derived from the spoke shape analysis.