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Study and optimisation of parasitic elements in heterogeneously integrated laser diodes

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Study and optimisation of parasitic elements in heterogeneously integrated laser diodes

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dc.contributor.advisor Geert Morthier es_ES
dc.contributor.advisor Amin Abbasi es_ES
dc.contributor.author Richart Fernández, Antonio es_ES
dc.date.accessioned 2017-03-22T10:24:51Z
dc.date.available 2017-03-22T10:24:51Z
dc.date.created 2015-11-26
dc.date.issued 2017-03-22
dc.identifier.uri http://hdl.handle.net/10251/78953
dc.description.abstract This work presents a full RF analysis of a heterogeneously integrated laser diode (with an InP membrane on top of silicon waveguides) for very high speed (>40Gb/s) modulation. In order to achieve this, the optimal design of the laser cavity is studied from an electrical point of view using simulations of different models, obtaining the corresponding electric field and S11 parameter. A small-signal equivalent circuit has also been applied to extract and optimize the parasitic elements of the laser structure by fitting the S11 parameter previously obtained. Finally, the simulated results are compared and discussed with the measurement results from a real laser. es_ES
dc.format.extent 70 es_ES
dc.language Inglés es_ES
dc.publisher Universitat Politècnica de València es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject DFB laser, parasitic elements extraction es_ES
dc.subject.other Ingeniería en Telecomunicación-Enginyeria en Telecomunicació es_ES
dc.title Study and optimisation of parasitic elements in heterogeneously integrated laser diodes es_ES
dc.type Proyecto/Trabajo fin de carrera/grado es_ES
dc.rights.accessRights Cerrado es_ES
dc.contributor.affiliation Universitat Politècnica de València. Escuela Técnica Superior de Ingenieros de Telecomunicación - Escola Tècnica Superior d'Enginyers de Telecomunicació es_ES
dc.description.bibliographicCitation Richart Fernández, A. (2015). Study and optimisation of parasitic elements in heterogeneously integrated laser diodes. http://hdl.handle.net/10251/78953. es_ES
dc.description.accrualMethod Archivo delegado es_ES


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