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Ultra-compact electro-absorption VO2-Si modulator with TM to TE conversion

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Ultra-compact electro-absorption VO2-Si modulator with TM to TE conversion

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Nombre: SÁNCHEZ;F. Cortés ...
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dc.contributor.author Sánchez Diana, Luis David es_ES
dc.contributor.author Cortés Juan, Frederic es_ES
dc.contributor.author Rosa Escutia, Álvaro es_ES
dc.contributor.author Sanchis Kilders, Pablo es_ES
dc.date.accessioned 2017-04-25T11:46:28Z
dc.date.available 2017-04-25T11:46:28Z
dc.date.issued 2017-02
dc.identifier.issn 2040-8978
dc.identifier.uri http://hdl.handle.net/10251/79935
dc.description.abstract [EN] An ultra-compact (6 μm length) electro-absorber modulator with transverse magnetic (TM) to transverse-electric (TE) conversion is proposed. The device performance is controlled by means of the semiconductor-to-metal transition of the vanadium dioxide. For the insulating state, the device performs as a TM–TE converter with insertion losses of 0.3 dB and extinction ratio of 36 dB at a wavelength of 1.55 μm. Changing to the metallic state, the TE generated component is attenuated due to the increase of losses in the VO2 and the mode mismatch. This electro-absorber modulator shows a broadband operation with an extinction ratio higher than 10 dB and insertion losses below 0.5 dB for a range of 60 nm covering the whole C-band. es_ES
dc.description.sponsorship This work was supported by the European Commission under project FP7-ICT-2013-11-619456 SITOGA. Financial support from TEC2016-76849-C2-2-R and NANOMET Conselleria de Educacic, Cultura i Esport -PROMETEOII/2014/034 are also acknowledged. en_EN
dc.language Inglés es_ES
dc.publisher IOP Publishing es_ES
dc.relation.ispartof Journal of Optics es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject Integrated optics es_ES
dc.subject Electro-optical modulators es_ES
dc.subject Electro-optical switches es_ES
dc.subject Optical polarization es_ES
dc.subject Phase change materials es_ES
dc.subject.classification TEORIA DE LA SEÑAL Y COMUNICACIONES es_ES
dc.title Ultra-compact electro-absorption VO2-Si modulator with TM to TE conversion es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1088/2040-8986/aa5c06
dc.relation.projectID info:eu-repo/grantAgreement/MINECO//TEC2016-76849-C2-2-R/ES/DESARROLLO DE OXIDOS METALICOS DE TRANSICION CON TECNOLOGIA DE SILICIO PARA APLICACIONES DE CONMUTACION E INTERCONEXION OPTICAS EFICIENTES Y RESPETUOSAS CON EL MEDIO AMBIENTE/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/EC/FP7/619456/EU/Silicon CMOS compatible transition metal oxide technology for boosting highly integrated photonic devices with disruptive performance/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/GVA//PROMETEOII%2F2014%2F034/ES/Nanomet Plus/ es_ES
dc.rights.accessRights Cerrado es_ES
dc.contributor.affiliation Universitat Politècnica de València. Escuela Técnica Superior de Ingenieros de Telecomunicación - Escola Tècnica Superior d'Enginyers de Telecomunicació es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica es_ES
dc.description.bibliographicCitation Sánchez Diana, LD.; Cortés Juan, F.; Rosa Escutia, Á.; Sanchis Kilders, P. (2017). Ultra-compact electro-absorption VO2-Si modulator with TM to TE conversion. Journal of Optics. 19(3):035401-1-035401-6. https://doi.org/10.1088/2040-8986/aa5c06 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http://dx.doi.org/10.1088/2040-8986/aa5c06 es_ES
dc.description.upvformatpinicio 035401-1 es_ES
dc.description.upvformatpfin 035401-6 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 19 es_ES
dc.description.issue 3 es_ES
dc.relation.senia 326016 es_ES
dc.contributor.funder European Commission
dc.contributor.funder Generalitat Valenciana
dc.contributor.funder Ministerio de Economía y Competitividad es_ES
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