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MCU Tolerance in SRAMs through Low Redundancy Triple Adjacent Error Correction

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MCU Tolerance in SRAMs through Low Redundancy Triple Adjacent Error Correction

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Saiz-Adalid, L.; Reviriego, P.; Gil, P.; Pontarelli, S.; Maestro, JA. (2015). MCU Tolerance in SRAMs through Low Redundancy Triple Adjacent Error Correction. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 23(10):2332-2336. doi:10.1109/TVLSI.2014.2357476

Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/88035

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Title: MCU Tolerance in SRAMs through Low Redundancy Triple Adjacent Error Correction
Author:
UPV Unit: Universitat Politècnica de València. Instituto Universitario de Aplicaciones de las Tecnologías de la Información - Institut Universitari d'Aplicacions de les Tecnologies de la Informació
Universitat Politècnica de València. Departamento de Informática de Sistemas y Computadores - Departament d'Informàtica de Sistemes i Computadors
Issued date:
Abstract:
[EN] Static random access memories (SRAMs) are key in electronic systems. They are used not only as standalone devices, but also embedded in application specific integrated circuits. One key challenge for memories is their ...[+]
Subjects: Burst error correction codes (ECCs) , ECCs , Memory , SEC-DAEC , SEC-DAEC-TAEC , Single error correction-double error detection (SEC-DED)
Copyrigths: Reserva de todos los derechos
Source:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. (issn: 1063-8210 ) (eissn: 1557-9999 )
DOI: 10.1109/TVLSI.2014.2357476
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Publisher version: http://doi.org/10.1109/TVLSI.2014.2357476
Description: (c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Thanks:
This work was supported in part by the Universitat Politecnica de Valencia, Valencia, Spain, through the DesTT Research Project under Grant SP20120806; in part by the Spanish Ministry of Science and Education under Project ...[+]
Type: Artículo

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