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Optical gain by simultaneous photon and phonon confinement in indirect bandgap semiconductor acousto-optical cavities

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Optical gain by simultaneous photon and phonon confinement in indirect bandgap semiconductor acousto-optical cavities

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Escalante Fernández, JM.; Martínez Abietar, AJ. (2013). Optical gain by simultaneous photon and phonon confinement in indirect bandgap semiconductor acousto-optical cavities. Optical and Quantum Electronics. 45(10):1045-1056. https://doi.org/10.1007/s11082-013-9715-z

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Título: Optical gain by simultaneous photon and phonon confinement in indirect bandgap semiconductor acousto-optical cavities
Autor: Escalante Fernández, José María Martínez Abietar, Alejandro José
Entidad UPV: Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions
Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica
Fecha difusión:
Resumen:
[EN] Optical gain that could ultimately lead to light emission from silicon is a goal that has been pursued for a long time by the scientific community. The reason is that a silicon laser would allow for the development ...[+]
Palabras clave: Optical gain , Indirect bandgap semiconductor , Optical cavity , Purcell factor , Silicon laser
Derechos de uso: Cerrado
Fuente:
Optical and Quantum Electronics. (issn: 0306-8919 )
DOI: 10.1007/s11082-013-9715-z
Editorial:
Springer-Verlag
Versión del editor: http://doi.org/10.1007/s11082-013-9715-z
Código del Proyecto:
info:eu-repo/grantAgreement/EC/FP7/233883/EU/TAILoring photon-phonon interaction in silicon PHOXonic crystals/
Agradecimientos:
This research has received funding from the European Community’s Seventh Framework Programme (FP7/2007-2013) under grant agreement number 233883 (TAILPHOX).
Tipo: Artículo

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