[EN] We report a joint experimental and theoretical study of the structural, vibrational, elastic, optical, and electronic properties of the layered high-mobility semiconductor Bi2O2Se at high pressure. A good agreement ...
Bi2Se3, Bi2Te3, and Sb2Te3 are narrow bandgap semiconductors with tetradymite crystal structure (R-3m) which have been extensively studied along with their alloys due to their promising operation as thermoelectric materials ...
We report an experimental and theoretical lattice dynamics study of bismuth telluride (Bi2Te3) up to 23 GPa together with an experimental and theoretical study of the optical absorption and reflection up to 10 GPa. The ...
We report an experimental and theoretical lattice dynamics study of antimony telluride (Sb 2Te 3) up to 26 GPa together with a theoretical study of its structural stability under pressure. Raman-active modes of the ...
[EN]
GaGeTe is a layered van der Waals material composed of germanene and GaTe sublayers that has been recently predicted to be a basic Z2 topological semimetal. To date, only one polytype of GaGeTe is known with trigonal ...
The structural and vibrational properties of bismuth selenide (Bi 2Se 3) have been studied by means of x-ray diffraction and Raman scattering measurements up to 20 and 30 GPa, respectively. The measurements have been ...
Compresed BiTeBr has been studied from a joint experimental and theoretical perspective. Room-temperature
x-ray diffraction, Raman scattering, and transport measurements at high pressures have been performed in this
layered ...
[EN] GaGeTe is a layered topological semimetal that has been recently found to exist in at least two different polytypes, a-GaGeTe (R3m) and b-GaGeTe (P63mc). Here we report a joint experimental and theoretical study of ...