Advancing Logic Circuits With Halide Perovskite Memristors for Next-Generation Digital Systems

dc.contributor.affiliationInstituto Universitario Mixto de Tecnología Química
dc.contributor.authorShoosthtari, Mostafaes_ES
dc.contributor.authorKim, Soyeon
dc.contributor.authorPahlavan, Saeidehes_ES
dc.contributor.authorRivera-Sierra, Gonzalo
dc.contributor.authorJimenez Traves, Manueles_ES
dc.contributor.authorSerrano-Gotarredona, Teresaes_ES
dc.contributor.authorBisquert, Juan
dc.contributor.authorLinares-Barranco, Bernabees_ES
dc.contributor.funderEuropean Research Counciles_ES
dc.contributor.funderEuropean Commissiones_ES
dc.date.accessioned2025-09-03T12:34:10Z
dc.date.available2025-09-03T12:34:10Z
dc.date.issued2025-08-27es_ES
dc.description.abstract[EN] The potential of all¿inorganic halide perovskite¿based memristors as a solution to the limitations of traditional memory systems, particularly in the context of edge computing and next¿generation digital architectures, is investigated. The rapid expansion of data¿driven applications demands more efficient, secure, and scalable memory technologies, prompting this exploration of memristors for their unique resistance¿switching properties. The research aims to address the challenges of data security and processing efficiency by integrating memristors into logic circuits, enabling both memory and logic operations within a single device. The study is structured around the experimental fabrication and characterization of Cs3Bi2I6Br3 perovskite memristors. A simple solution¿processed spin coating method with antisolvent¿assisted crystallization was employed to fabricate the memristor devices. The experimental characterization of memristors, including X¿ray diffraction (XRD) analysis and electrical measurements, confirmed their structural integrity and memristive behavior, with distinct hysteresis loops indicative of nonvolatile memory properties. To analyze the behavior of the memristors in electronic circuits, a Verilog¿A mathematical model was developed, and simulations were conducted using the Cadence Virtuoso Electronic Design Automation (EDA) suite. The Verilog¿A model demonstrates strong agreement with measured results and validates the device's hysteresis behavior. Key findings demonstrate that metal halide perovskite (MHP) memristors exhibit excellent switching characteristics, repeatability, and integration potential with complementary metal¿oxide¿semiconductor (CMOS) technology. These properties make them suitable for implementing various logic gates, such as IMPLY, AND, and OR gates, as well as more complex digital circuits like multiplexers and full adders. The results highlight the feasibility of using these memristors for in¿memory computing, where both data storage and processing occur within the memory cells, significantly enhancing computing efficiency and security. The study concludes that MHP¿based memristors offer a promising path toward more compact, energy¿efficient, and secure computing architectures.en_EN
dc.description.accrualMethodSes_ES
dc.description.bibliographicCitationShoosthtari, M.; Kim, Soyeon; Pahlavan, S.; Rivera-Sierra, Gonzalo; Jimenez Traves, M.; Serrano-Gotarredona, T.; Bisquert, Juan... (2025). Advancing Logic Circuits With Halide Perovskite Memristors for Next-Generation Digital Systems. SmartMat. 6(e70032):1-22. https://doi.org/10.1002/smm2.70032es_ES
dc.description.issuee70032es_ES
dc.description.sponsorshipThe work was funded by the European Research Council (ERC) via Horizon Europe Advanced (101097688) (PeroSpiker).es_ES
dc.description.upvformatpfin22es_ES
dc.description.upvformatpinicio1es_ES
dc.description.volume6es_ES
dc.identifier.doi10.1002/smm2.70032es_ES
dc.identifier.issn2766-8525es_ES
dc.identifier.urihttps://riunet.upv.es/handle/10251/225337
dc.languageIngléses_ES
dc.publisherWileyes_ES
dc.relation.ispartofSmartMates_ES
dc.relation.pasarelaS\560999es_ES
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/HE/101097688/EU/Perovskite Spiking Neurons for Intelligent Networks/es_ES
dc.relation.publisherversionhttps://doi.org/10.1002/smm2.70032es_ES
dc.rightsReconocimiento (by)es_ES
dc.rights.accessRightsAbiertoes_ES
dc.subjectAll-inorganic halide perovskitees_ES
dc.subjectMemristorses_ES
dc.subjectEdge computinges_ES
dc.subjectIn-memory computinges_ES
dc.subjectResistance switchinges_ES
dc.subjectCs3Bi2I6Br3es_ES
dc.subjectSpin coatinges_ES
dc.subjectVerilog-A modelinges_ES
dc.subjectCMOS integrationes_ES
dc.subjectLogic circuitses_ES
dc.titleAdvancing Logic Circuits With Halide Perovskite Memristors for Next-Generation Digital Systemses_ES
dc.typeArtículoes_ES
dc.type.versioninfo:eu-repo/semantics/publishedVersiones_ES
dspace.entity.typePublicationes_ES
person.identifier785935
person.identifier798328
person.identifier302749
person.identifier.orcid0009-0008-2651-9157
person.identifier.orcid0000-0003-4987-4887
relation.isAuthorOfPublication74242b48-bb76-41bd-a919-5bc29dfd5bce
relation.isAuthorOfPublication84fcc74c-acf7-4616-95c2-6f6e7b27ad66
relation.isAuthorOfPublicationac76c529-a55b-47a6-b7f7-18e17a41c318
relation.isAuthorOfPublication.latestForDiscovery74242b48-bb76-41bd-a919-5bc29dfd5bce
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upv.uuid7a5de0a2-ff46-42ad-baab-89caa3a239f2es_ES

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