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Wideband Transition for Increased-Height Empty Substrate Integrated Waveguide

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Wideband Transition for Increased-Height Empty Substrate Integrated Waveguide

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dc.contributor.author Martínez-Zamora, Juan Ángel es_ES
dc.contributor.author BELENGUER MARTÍNEZ, ANGEL es_ES
dc.contributor.author de Dios, Juan J. es_ES
dc.contributor.author Esteban González, Héctor es_ES
dc.contributor.author Boria Esbert, Vicente Enrique es_ES
dc.date.accessioned 2020-05-23T03:01:25Z
dc.date.available 2020-05-23T03:01:25Z
dc.date.issued 14-10-2019 es_ES
dc.identifier.uri http://hdl.handle.net/10251/144222
dc.description (c) 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. es_ES
dc.description.abstract [Otros] Recently, Empty Substrate Integrated Waveguide (ESIW) technology was proposed for embedding empty waveguides into planar substrates in order to improve their performance. A low-loss and narrow-band transition from microstrip to an increased height ESIW with 4 layers was presented in a previous work, and used to implement a very high-quality factor bandpass filter at Q-band. With such a narrow-band transition, based on a quarter-wavelength transformer, a very narrow-band filter response with resonators having a quality factor of 1000 was achieved. In this paper, in order to overcome the narrow-band and the 4-layers output restrictions, and extend the practical use of such increased height ESIWs beyond narrow-band filters, we present a novel wideband transition from microstrip to an increased height ESIW with an arbitrary number of layers. A full suite of wideband transitions to increased height ESIWs, built with different number of substrate layers ranging from 3 to 8, has been designed in this work to operate at Ka-band, though they can be easily transferred to other bands if the dimensions of the transition are properly scaled. To illustrate this, the original Ka-band transitions have been mapped to Ku-band, with excellent results. In order to test the proposed design method, a prototype of a 4-layer structure has been fabricated at Ka-band, achieving a good performance in the whole useful bandwidth of the ESIW. es_ES
dc.description.sponsorship This work was supported in part by the Ministerio de Economia y Competitividad, Spanish Government, under Project TEC2016-75934-C4-3-R and Project TEC2016-75934-C4-1-R, and in part by the Consejeria de Educacion, Cultura y Deportes, Autonomous Government of Castilla-La Mancha, under Project SBPLY/17/180501/000351. es_ES
dc.language Otros es_ES
dc.publisher Institute of Electrical and Electronics Engineers es_ES
dc.relation JCCM/SBPLY/17/180501/000351 es_ES
dc.relation AGENCIA ESTATAL DE INVESTIGACION/TEC2016-75934-C4-1-R es_ES
dc.relation.ispartof IEEE Access es_ES
dc.rights Reconocimiento (by) es_ES
dc.subject Rectangular waveguides es_ES
dc.subject Substrates es_ES
dc.subject Impedance es_ES
dc.subject Waveguide transitions es_ES
dc.subject Wideband es_ES
dc.subject Cutoff frequency es_ES
dc.subject Microstrip es_ES
dc.subject Empty substrate integrated waveguide es_ES
dc.subject ESIW es_ES
dc.subject High quality factor es_ES
dc.subject Microstrip transition es_ES
dc.subject Multilayer es_ES
dc.subject Substrate integrated circuit es_ES
dc.subject SIC es_ES
dc.subject Substrate integrated waveguide es_ES
dc.subject SIW es_ES
dc.subject.classification TEORIA DE LA SEÑAL Y COMUNICACIONES es_ES
dc.title Wideband Transition for Increased-Height Empty Substrate Integrated Waveguide es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1109/ACCESS.2019.2947215 es_ES
dc.rights.accessRights Abierto es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions es_ES
dc.description.bibliographicCitation Martínez-Zamora, JÁ.; Belenguer Martínez, A.; De Dios, JJ.; Esteban González, H.; Boria Esbert, VE. (14-1). Wideband Transition for Increased-Height Empty Substrate Integrated Waveguide. IEEE Access. 7:149406-149413. https://doi.org/10.1109/ACCESS.2019.2947215 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion https://doi.org/10.1109/ACCESS.2019.2947215 es_ES
dc.description.upvformatpinicio 149406 es_ES
dc.description.upvformatpfin 149413 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 7 es_ES
dc.identifier.eissn 2169-3536 es_ES
dc.relation.pasarela 396030 es_ES
dc.contributor.funder AGENCIA ESTATAL DE INVESTIGACION es_ES
dc.contributor.funder Junta de Comunidades de Castilla-La Mancha es_ES


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