- -

Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices

RiuNet: Institutional repository of the Polithecnic University of Valencia

Share/Send to

Cited by

Statistics

Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices

Show full item record

Blázquez, O.; Frieiro, J.; López-Vidrier, J.; Guillaume, C.; Portier, X.; Labbé, C.; Sanchis Kilders, P.... (2018). Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices. Applied Physics Letters. 113(18):1-6. https://doi.org/10.1063/1.5046911

Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/145744

Files in this item

Item Metadata

Title: Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices
Author: Blázquez, O. Frieiro, J.L. López-Vidrier, J. Guillaume, C. Portier, X. Labbé, C. Sanchis Kilders, Pablo Hernández, S. Garrido, B.
UPV Unit: Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions
Issued date:
Abstract:
[EN] The resistive switching properties of ITO/ZnO/p-Si devices have been studied, which present well-defined resistance states with more than five orders of magnitude difference in current. Both the high resistance state ...[+]
Subjects: ZnO Thin-films , Solid-Electrolyte , Memory , Nanofilament , Memristor , Systems , Oxide
Copyrigths: Reserva de todos los derechos
Source:
Applied Physics Letters. (issn: 0003-6951 )
DOI: 10.1063/1.5046911
Publisher:
American Institute of Physics
Publisher version: https://doi.org/10.1063/1.5046911
Project ID:
info:eu-repo/grantAgreement/MINECO//TEC2012-38540-C02-02/ES/DISPOSITIVOS DE CONMUTACION Y MODULACION ELECTRO-OPTICA CON FOTONICA DE SILICIO BASADA EN TECNOLOGIA CMOS PARA ENRUTADO INTRA-CHIP E INTERCONEXIONES OPTICAS/
info:eu-repo/grantAgreement/MINECO//TEC2016-76849-C2-2-R/ES/DESARROLLO DE OXIDOS METALICOS DE TRANSICION CON TECNOLOGIA DE SILICIO PARA APLICACIONES DE CONMUTACION E INTERCONEXION OPTICAS EFICIENTES Y RESPETUOSAS CON EL MEDIO AMBIENTE/
Thanks:
This work was financially supported by the Spanish Ministry of Economy and Competitiveness (Project Nos. TEC2012-38540-C02-01 and TEC2016-76849-C2-1-R). O.B. also acknowledges the subprogram "Ayudas para Contratos Predoctorales ...[+]
Type: Artículo

References

I. G. Baek , M. S. Lee , S. Sco , M. J. Lee , D. H. Seo , D.S. Suh , J. C. Park , S. O. Park , H. S. Kim , I. K. Yoo , U.I. Chung , and J. T. Moon , in IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 ( IEEE, 2004), pp. 587–590.

Waser, R., & Aono, M. (2007). Nanoionics-based resistive switching memories. Nature Materials, 6(11), 833-840. doi:10.1038/nmat2023

Kaeriyama, S., Sakamoto, T., Sunamura, H., Mizuno, M., Kawaura, H., Hasegawa, T., … Aono, M. (2005). A nonvolatile programmable solid-electrolyte nanometer switch. IEEE Journal of Solid-State Circuits, 40(1), 168-176. doi:10.1109/jssc.2004.837244 [+]
I. G. Baek , M. S. Lee , S. Sco , M. J. Lee , D. H. Seo , D.S. Suh , J. C. Park , S. O. Park , H. S. Kim , I. K. Yoo , U.I. Chung , and J. T. Moon , in IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 ( IEEE, 2004), pp. 587–590.

Waser, R., & Aono, M. (2007). Nanoionics-based resistive switching memories. Nature Materials, 6(11), 833-840. doi:10.1038/nmat2023

Kaeriyama, S., Sakamoto, T., Sunamura, H., Mizuno, M., Kawaura, H., Hasegawa, T., … Aono, M. (2005). A nonvolatile programmable solid-electrolyte nanometer switch. IEEE Journal of Solid-State Circuits, 40(1), 168-176. doi:10.1109/jssc.2004.837244

Strukov, D. B., & Likharev, K. K. (2005). CMOL FPGA: a reconfigurable architecture for hybrid digital circuits with two-terminal nanodevices. Nanotechnology, 16(6), 888-900. doi:10.1088/0957-4484/16/6/045

Mehonic, A., Cueff, S., Wojdak, M., Hudziak, S., Jambois, O., Labbé, C., … Kenyon, A. J. (2012). Resistive switching in silicon suboxide films. Journal of Applied Physics, 111(7), 074507. doi:10.1063/1.3701581

Mehonic, A., Vrajitoarea, A., Cueff, S., Hudziak, S., Howe, H., Labbé, C., … Kenyon, A. J. (2013). Quantum Conductance in Silicon Oxide Resistive Memory Devices. Scientific Reports, 3(1). doi:10.1038/srep02708

Pickett, M. D., Medeiros-Ribeiro, G., & Williams, R. S. (2012). A scalable neuristor built with Mott memristors. Nature Materials, 12(2), 114-117. doi:10.1038/nmat3510

Jo, S. H., Chang, T., Ebong, I., Bhadviya, B. B., Mazumder, P., & Lu, W. (2010). Nanoscale Memristor Device as Synapse in Neuromorphic Systems. Nano Letters, 10(4), 1297-1301. doi:10.1021/nl904092h

Vescio, G., Crespo-Yepes, A., Alonso, D., Claramunt, S., Porti, M., Rodriguez, R., … Aymerich, X. (2017). Inkjet Printed HfO2-Based ReRAMs: First Demonstration and Performance Characterization. IEEE Electron Device Letters, 38(4), 457-460. doi:10.1109/led.2017.2668599

Valov, I. (2013). Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale. ChemElectroChem, 1(1), 26-36. doi:10.1002/celc.201300165

Martín, G., González, M. B., Campabadal, F., Peiró, F., Cornet, A., & Estradé, S. (2017). Transmission electron microscopy assessment of conductive-filament formation in Ni–HfO2–Si resistive-switching operational devices. Applied Physics Express, 11(1), 014101. doi:10.7567/apex.11.014101

Simanjuntak, F. M., Panda, D., Wei, K.-H., & Tseng, T.-Y. (2016). Status and Prospects of ZnO-Based Resistive Switching Memory Devices. Nanoscale Research Letters, 11(1). doi:10.1186/s11671-016-1570-y

Kim, J., & Yong, K. (2011). Mechanism Study of ZnO Nanorod-Bundle Sensors for H2S Gas Sensing. The Journal of Physical Chemistry C, 115(15), 7218-7224. doi:10.1021/jp110129f

Yuan, Q., Zhao, Y.-P., Li, L., & Wang, T. (2009). Ab Initio Study of ZnO-Based Gas-Sensing Mechanisms: Surface Reconstruction and Charge Transfer. The Journal of Physical Chemistry C, 113(15), 6107-6113. doi:10.1021/jp810161j

Seo, J. W., Park, J.-W., Lim, K. S., Yang, J.-H., & Kang, S. J. (2008). Transparent resistive random access memory and its characteristics for nonvolatile resistive switching. Applied Physics Letters, 93(22), 223505. doi:10.1063/1.3041643

Rahaman, S. Z., Maikap, S., Chiu, H.-C., Lin, C.-H., Wu, T.-Y., Chen, Y.-S., … Tsai, M.-J. (2010). Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte. Electrochemical and Solid-State Letters, 13(5), H159. doi:10.1149/1.3339449

Simanjuntak, F. M., Panda, D., Tsai, T.-L., Lin, C.-A., Wei, K.-H., & Tseng, T.-Y. (2015). Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode. Journal of Materials Science, 50(21), 6961-6969. doi:10.1007/s10853-015-9247-y

Simanjuntak, F. M., Prasad, O. K., Panda, D., Lin, C.-A., Tsai, T.-L., Wei, K.-H., & Tseng, T.-Y. (2016). Impacts of Co doping on ZnO transparent switching memory device characteristics. Applied Physics Letters, 108(18), 183506. doi:10.1063/1.4948598

Simanjuntak, F. M., Panda, D., Tsai, T.-L., Lin, C.-A., Wei, K.-H., & Tseng, T.-Y. (2015). Enhanced switching uniformity in AZO/ZnO1−x/ITO transparent resistive memory devices by bipolar double forming. Applied Physics Letters, 107(3), 033505. doi:10.1063/1.4927284

Liu, Q., Guan, W., Long, S., Jia, R., Liu, M., & Chen, J. (2008). Resistive switching memory effect of ZrO[sub 2] films with Zr[sup +] implanted. Applied Physics Letters, 92(1), 012117. doi:10.1063/1.2832660

Shuai, Y., Zhou, S., Bürger, D., Helm, M., & Schmidt, H. (2011). Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt. Journal of Applied Physics, 109(12), 124117. doi:10.1063/1.3601113

Chen, J.-Y., Hsin, C.-L., Huang, C.-W., Chiu, C.-H., Huang, Y.-T., Lin, S.-J., … Chen, L.-J. (2013). Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories. Nano Letters, 13(8), 3671-3677. doi:10.1021/nl4015638

Hubbard, W. A., Kerelsky, A., Jasmin, G., White, E. R., Lodico, J., Mecklenburg, M., & Regan, B. C. (2015). Nanofilament Formation and Regeneration During Cu/Al2O3 Resistive Memory Switching. Nano Letters, 15(6), 3983-3987. doi:10.1021/acs.nanolett.5b00901

Liu, Q., Sun, J., Lv, H., Long, S., Yin, K., Wan, N., … Liu, M. (2012). Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM. Advanced Materials, 24(14), 1844-1849. doi:10.1002/adma.201104104

Zhu, X., Wu, H.-Z., Qiu, D.-J., Yuan, Z., Jin, G., Kong, J., & Shen, W. (2010). Photoluminescence and resonant Raman scattering in N-doped ZnO thin films. Optics Communications, 283(13), 2695-2699. doi:10.1016/j.optcom.2010.03.006

Cerqueira, M. F., Vasilevskiy, M. I., Oliveira, F., Rolo, A. G., Viseu, T., Ayres de Campos, J., … Correia, R. (2011). Resonant Raman scattering in ZnO:Mn and ZnO:Mn:Al thin films grown by RF sputtering. Journal of Physics: Condensed Matter, 23(33), 334205. doi:10.1088/0953-8984/23/33/334205

Marchewka, A., Roesgen, B., Skaja, K., Du, H., Jia, C.-L., Mayer, J., … Menzel, S. (2015). Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process. Advanced Electronic Materials, 2(1), 1500233. doi:10.1002/aelm.201500233

Krzywiecki, M., Grządziel, L., Sarfraz, A., Iqbal, D., Szwajca, A., & Erbe, A. (2015). Zinc oxide as a defect-dominated material in thin films for photovoltaic applications – experimental determination of defect levels, quantification of composition, and construction of band diagram. Physical Chemistry Chemical Physics, 17(15), 10004-10013. doi:10.1039/c5cp00112a

Murgatroyd, P. N. (1970). Theory of space-charge-limited current enhanced by Frenkel effect. Journal of Physics D: Applied Physics, 3(2), 151-156. doi:10.1088/0022-3727/3/2/308

Electron emission in intense electric fields. (1928). Proceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 119(781), 173-181. doi:10.1098/rspa.1928.0091

Özgür, Ü., Alivov, Y. I., Liu, C., Teke, A., Reshchikov, M. A., Doğan, S., … Morkoç, H. (2005). A comprehensive review of ZnO materials and devices. Journal of Applied Physics, 98(4), 041301. doi:10.1063/1.1992666

Kaidashev, E. M., Lorenz, M., von Wenckstern, H., Rahm, A., Semmelhack, H.-C., Han, K.-H., … Grundmann, M. (2003). High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition. Applied Physics Letters, 82(22), 3901-3903. doi:10.1063/1.1578694

Gall, D. (2016). Electron mean free path in elemental metals. Journal of Applied Physics, 119(8), 085101. doi:10.1063/1.4942216

Lee, W., Park, J., Kim, S., Woo, J., Shin, J., Choi, G., … Hwang, H. (2012). High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays. ACS Nano, 6(9), 8166-8172. doi:10.1021/nn3028776

Kwon, D.-H., Kim, K. M., Jang, J. H., Jeon, J. M., Lee, M. H., Kim, G. H., … Hwang, C. S. (2010). Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. Nature Nanotechnology, 5(2), 148-153. doi:10.1038/nnano.2009.456

Choi, B. J., Torrezan, A. C., Strachan, J. P., Kotula, P. G., Lohn, A. J., Marinella, M. J., … Yang, J. J. (2016). High‐Speed and Low‐Energy Nitride Memristors. Advanced Functional Materials, 26(29), 5290-5296. doi:10.1002/adfm.201600680

Sun, X. (2006). Designing efficient field emission into ZnO. SPIE Newsroom. doi:10.1117/2.1200602.0101

Hu, C., Wang, Q., Bai, S., Xu, M., He, D., Lyu, D., & Qi, J. (2017). The effect of oxygen vacancy on switching mechanism of ZnO resistive switching memory. Applied Physics Letters, 110(7), 073501. doi:10.1063/1.4976512

Gul, F., & Efeoglu, H. (2017). Bipolar resistive switching and conduction mechanism of an Al/ZnO/Al-based memristor. Superlattices and Microstructures, 101, 172-179. doi:10.1016/j.spmi.2016.11.043

Blázquez, O., Martín, G., Camps, I., Mariscal, A., López-Vidrier, J., Ramírez, J. M., … Garrido, B. (2018). Memristive behaviour of Si-Al oxynitride thin films: the role of oxygen and nitrogen vacancies in the electroforming process. Nanotechnology, 29(23), 235702. doi:10.1088/1361-6528/aab744

Bersuker, G., Gilmer, D. C., Veksler, D., Kirsch, P., Vandelli, L., Padovani, A., … Nafría, M. (2011). Metal oxide resistive memory switching mechanism based on conductive filament properties. Journal of Applied Physics, 110(12), 124518. doi:10.1063/1.3671565

[-]

recommendations

 

This item appears in the following Collection(s)

Show full item record