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Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices

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Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices

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dc.contributor.author Blázquez, O. es_ES
dc.contributor.author Frieiro, J.L. es_ES
dc.contributor.author López-Vidrier, J. es_ES
dc.contributor.author Guillaume, C. es_ES
dc.contributor.author Portier, X. es_ES
dc.contributor.author Labbé, C. es_ES
dc.contributor.author Sanchis Kilders, Pablo es_ES
dc.contributor.author Hernández, S. es_ES
dc.contributor.author Garrido, B. es_ES
dc.date.accessioned 2020-06-09T03:32:04Z
dc.date.available 2020-06-09T03:32:04Z
dc.date.issued 2018-10-29 es_ES
dc.identifier.issn 0003-6951 es_ES
dc.identifier.uri http://hdl.handle.net/10251/145744
dc.description.abstract [EN] The resistive switching properties of ITO/ZnO/p-Si devices have been studied, which present well-defined resistance states with more than five orders of magnitude difference in current. Both the high resistance state (HRS) and the low resistance state (LRS) were induced by either sweeping or pulsing the voltage, observing some differences in the HRS. Finally, the charge transport mechanisms dominating the pristine, HRS, and LRS states have been analyzed in depth, and the obtained structural parameters suggest a partial re-oxidation of the conductive nanofilaments and a reduction of the effective conductive area. es_ES
dc.description.sponsorship This work was financially supported by the Spanish Ministry of Economy and Competitiveness (Project Nos. TEC2012-38540-C02-01 and TEC2016-76849-C2-1-R). O.B. also acknowledges the subprogram "Ayudas para Contratos Predoctorales para la Formacion de Doctores" of the Spanish Ministry of Economy and Competitiveness for economical support. X.P., C.L., and C.G. are grateful to C. Frilay for his expertise in the maintenance of the sputtering kit used for the growth of the ZnO films. es_ES
dc.language Inglés es_ES
dc.publisher American Institute of Physics es_ES
dc.relation.ispartof Applied Physics Letters es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject ZnO Thin-films es_ES
dc.subject Solid-Electrolyte es_ES
dc.subject Memory es_ES
dc.subject Nanofilament es_ES
dc.subject Memristor es_ES
dc.subject Systems es_ES
dc.subject Oxide es_ES
dc.subject.classification TEORIA DE LA SEÑAL Y COMUNICACIONES es_ES
dc.title Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1063/1.5046911 es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MINECO//TEC2012-38540-C02-02/ES/DISPOSITIVOS DE CONMUTACION Y MODULACION ELECTRO-OPTICA CON FOTONICA DE SILICIO BASADA EN TECNOLOGIA CMOS PARA ENRUTADO INTRA-CHIP E INTERCONEXIONES OPTICAS/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MINECO//TEC2016-76849-C2-2-R/ES/DESARROLLO DE OXIDOS METALICOS DE TRANSICION CON TECNOLOGIA DE SILICIO PARA APLICACIONES DE CONMUTACION E INTERCONEXION OPTICAS EFICIENTES Y RESPETUOSAS CON EL MEDIO AMBIENTE/ es_ES
dc.rights.accessRights Abierto es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions es_ES
dc.description.bibliographicCitation Blázquez, O.; Frieiro, J.; López-Vidrier, J.; Guillaume, C.; Portier, X.; Labbé, C.; Sanchis Kilders, P.... (2018). Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices. Applied Physics Letters. 113(18):1-6. https://doi.org/10.1063/1.5046911 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion https://doi.org/10.1063/1.5046911 es_ES
dc.description.upvformatpinicio 1 es_ES
dc.description.upvformatpfin 6 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 113 es_ES
dc.description.issue 18 es_ES
dc.relation.pasarela S\380204 es_ES
dc.contributor.funder Ministerio de Economía y Competitividad es_ES
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